2SC2527 Todos los transistores

 ..1. Size:194K  fuji
 2sc2527.pdf

 ..2. Size:193K  inchange semiconductor
 2sc2527.pdf

isc Silicon NPN Power Transistor 2SC2527 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications. High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

 8.1. Size:213K  inchange semiconductor
 2sc2523.pdf

isc Silicon NPN Power Transistor 2SC2523 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 160V(Min) (BR)CEO Fast Switching Speed Wide Area of Safe Operation Complement to Type 2SA1073 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High frequency power amplifier Audio power amplifiers Switching regulators D

 8.2. Size:224K  inchange semiconductor
 2sc2526.pdf

isc Silicon NPN Power Transistor 2SC2526 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 160V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1076 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL

 8.3. Size:194K  inchange semiconductor
 2sc2528.pdf

isc Silicon NPN Power Transistor 2SC2528 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.0V(Max) @I = 0.7A CE(sat) C Complement to Type 2SA1078 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High frequency power amplifier, Audio power amplifier Dirv

 8.4. Size:189K  inchange semiconductor
 2sc2525.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2525 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Good Linearity of h FE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a S

 8.5. Size:207K  inchange semiconductor
 2sc2522.pdf

isc Silicon NPN Power Transistor 2SC2522 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Fast Switching Speed Wide Area of Safe Operation Complement to Type 2SA1072 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High frequency power amplifier Audio power amplifiers Switching regulators D