2SC2529 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC2529
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 25 W
Tensión colector-base (Vcb): 160 V
Tensión colector-emisor (Vce): 160 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 80 MHz
Capacitancia de salida (Cc): 60 pF
Ganancia de corriente contínua (hFE): 60
Encapsulados: TO220
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2SC2529 datasheet
2sc2523.pdf
isc Silicon NPN Power Transistor 2SC2523 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 160V(Min) (BR)CEO Fast Switching Speed Wide Area of Safe Operation Complement to Type 2SA1073 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High frequency power amplifier Audio power amplifiers Switching regulators D
2sc2526.pdf
isc Silicon NPN Power Transistor 2SC2526 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 160V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1076 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL
2sc2528.pdf
isc Silicon NPN Power Transistor 2SC2528 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.0V(Max) @I = 0.7A CE(sat) C Complement to Type 2SA1078 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High frequency power amplifier, Audio power amplifier Dirv
Otros transistores... 2SC2522 , 2SC2522A , 2SC2523 , 2SC2524 , 2SC2525 , 2SC2526 , 2SC2527 , 2SC2528 , 2SD1047 , 2SC253 , 2SC2530 , 2SC2531 , 2SC2532 , 2SC2533 , 2SC2534 , 2SC2535 , 2SC2536 .
History: 2SC5551A
History: 2SC5551A
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