2SC2534 Todos los transistores

 ..1. Size:184K  inchange semiconductor
 2sc2534.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2534 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150(V)(Min.) (BR)CEO 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed high voltage switching application Switching regulator applications High speed DC-DC converter applicatio

 8.1. Size:185K  toshiba
 2sc2532.pdf

2SC2532 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2532 Audio Frequency Amplifier Applications Unit mm Driver Stage for LED Lamp Applications Temperature Compensation Applications High hFE hFE (1) = 5000 (min) (IC = 10 mA) h (2) = 10000 (min) (IC = 100 mA) FE Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base

 8.2. Size:810K  kexin
 2sc2532.pdf

SMD Type Transistors NPN Transistors 2SC2532 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=300mA 1 2 Collector Emitter Voltage VCEO=40V +0.1 0.95-0.1 0.1+0.05 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collect

 8.3. Size:172K  inchange semiconductor
 2sc2535.pdf