2SC2538 Todos los transistores

 

2SC2538 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC2538
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.7 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 17 V
   Tensión emisor-base (Veb): 4 V
   Corriente del colector DC máxima (Ic): 0.4 A
   Temperatura operativa máxima (Tj): 135 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 175 MHz
   Ganancia de corriente contínua (hfe): 10
   Paquete / Cubierta: TO92

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2SC2538 Datasheet (PDF)

 8.1. Size:185K  toshiba
2sc2532.pdf

2SC2538
2SC2538

2SC2532 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2532 Audio Frequency Amplifier Applications Unit: mm Driver Stage for LED Lamp Applications Temperature Compensation Applications High hFE: hFE (1) = 5000 (min) (IC = 10 mA) h (2) = 10000 (min) (IC = 100 mA) FEMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base

 8.2. Size:810K  kexin
2sc2532.pdf

2SC2538
2SC2538

SMD Type TransistorsNPN Transistors2SC2532SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=300mA1 2 Collector Emitter Voltage VCEO=40V+0.10.95-0.1 0.1+0.05-0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collect

 8.3. Size:172K  inchange semiconductor
2sc2535.pdf

2SC2538
2SC2538

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2535DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25

 8.4. Size:184K  inchange semiconductor
2sc2534.pdf

2SC2538
2SC2538

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2534DESCRIPTIONCollector-Emitter Breakdown Voltage-:V = 150(V)(Min.)(BR)CEO100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed high voltage switching applicationSwitching regulator applicationsHigh speed DC-DC converter applicatio

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: P402 | MD5000

 

 
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History: P402 | MD5000

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