2SC2547
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC2547
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.4
W
Tensión colector-base (Vcb): 120
V
Tensión colector-emisor (Vce): 120
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 125
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 45
MHz
Capacitancia de salida (Cc): 3
pF
Ganancia de corriente contínua (hfe): 250
Paquete / Cubierta:
TO92
Búsqueda de reemplazo de transistor bipolar 2SC2547
2SC2547
Datasheet (PDF)
..1. Size:41K hitachi
2sc2545 2sc2546 2sc2547.pdf
2SC2545, 2SC2546, 2SC2547Silicon NPN EpitaxialApplication Low frequency low noise amplifier Complementary pair with 2SA1083, 2SA1084 and 2SA1085OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SC2545, 2SC2546, 2SC2547Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SC2545 2SC2546 2SC2547 UnitCollector to base voltage VCBO 60 90 120 VCollector to emitter
8.1. Size:24K hitachi
2sc2396 2sc2543 2sc2544.pdf
2SC2396, 2SC2543, 2SC2544Silicon NPN EpitaxialApplication Low frequency amplifier Complementary pair with 2SA1025, 2SA1081 and 2SA1082OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SC2396, 2SC2543, 2SC2544Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SC2396 2SC2543 2SC2544 UnitCollector to base voltage VCBO 60 90 120 VCollector to emitter voltage V
8.2. Size:246K inchange semiconductor
2sc2541.pdf
isc Silicon NPN Power Transistor 2SC2541DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switch-mode CTV supply systems applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol
8.3. Size:171K inchange semiconductor
2sc2542.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2542DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25
Otros transistores... 2SA1179M4
, 2SA1179M5
, 2SA1179M6
, 2SA1179M7
, 2SA118
, 2SA1180
, 2SA1180A
, 2SA1182
, BD777
, 2SA1182Y
, 2SA1183
, 2SA1184
, 2SA1185
, 2SA1186
, 2SA1186O
, 2SA1186P
, 2SA1186Y
.