2SC2550 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC2550
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 8 V
Corriente del colector DC máxima (Ic): 0.2 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 125 MHz
Capacitancia de salida (Cc): 3 pF
Ganancia de corriente contínua (hFE): 70
Encapsulados: TO39
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2SC2550 datasheet
8.3. Size:330K toshiba
2sc2551.pdf 
2SC2551 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2551 Industrial Applications Hight Voltage Control Applications Unit mm Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications High voltage VCBO = 300 V, V = 300 V CEO Low saturation voltage V = 0.5 V (max) CE (sat) Small collector output capacita
8.5. Size:766K secos
2sc2551.pdf
2SC2551 0.1 A , 300 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 High Voltage G H Low Saturation Voltage Small Collector Output Capacitance Complementary to 2SA1091 J Emitter A D Collector Base B CLASSIFICATION OF hFE(1) K Millimet
8.6. Size:255K lge
2sc2551.pdf
2SC2551(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High voltage Low saturation voltage Small collector output capacitance Complementary to 2SA1091 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 300 V Dimensions in inches and (millimeters) VCEO Collector-Emitter Vo
8.7. Size:196K inchange semiconductor
2sc2555.pdf
isc Silicon NPN Power Transistor 2SC2555 DESCRIPTION High Collector-Emitter Voltage- V = 400V(Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications Minimum Lot-to-Lot variations for robust device
8.8. Size:191K inchange semiconductor
2sc2552.pdf
isc Silicon NPN Power Transistor 2SC2552 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications. High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB
8.9. Size:191K inchange semiconductor
2sc2553.pdf
isc Silicon NPN Power Transistor 2SC2553 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications. High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB
8.10. Size:195K inchange semiconductor
2sc2556.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2556 DESCRIPTION High transistor frequency Low Saturation Voltage High V CBO 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency output amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base V
8.11. Size:121K inchange semiconductor
2sc2556 2sc2556a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2556 2SC2556A DESCRIPTION With TO-126 package High VCBO Low collector saturation voltage High transition frequency APPLICATIONS Audio frequency output amplifier PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 )
Otros transistores... 2SC2543, 2SC2544, 2SC2545, 2SC2546, 2SC2547, 2SC2548, 2SC2549, 2SC255, 8550, 2SC2551, 2SC2551O, 2SC2551R, 2SC2552, 2SC2553, 2SC2555, 2SC2556, 2SC2556A
