2SC2570A Todos los transistores

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 2sc2570a.pdf

DATA SHEET NPN SILICON TRANSISTOR 2SC2570A HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC2570A is designed for use in Low Noise Amplifier of VHF & UHF stages. FEATURES Low noise and high gain NF = 1.5 dB TYP., Ga = 8 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 5.0 mA Wide dynamic range NF = 1.9 dB, Ga = 9 dB @f = 1 GHz, VCE = 10 V, IC = 1

 ..2. Size:177K  inchange semiconductor
 2sc2570a.pdf

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2570A DESCRIPTION Low Noise and High Gain NF = 1.5 dB TYP. Ga = 8 dB TYP. @f = 1.0 GHz, V = 10 V, I = 5 mA CE C Wide Dynamic Range NF = 1.9 dB TYP. Ga = 9 dB TYP. @f = 1.0 GHz, V = 10 V, I = 15 mA CE C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

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 2sc2577.pdf

2SC2577 NPN PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SA1102 ABSOLUTE MAXIMUM RATING (Ta=25 C C) C C Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 160 V Collector-Emitter Voltage VCEO 120 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 8 A Collector

 8.2. Size:48K  wingshing
 2sc2578.pdf

2SC2578 NPN PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SA1104 ABSOLUTE MAXIMUM RATING (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 140 V Collector-Emitter Voltage VCEO 100 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 7 A

 8.3. Size:146K  jmnic
 2sc2577.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC2577 DESCRIPTION With TO-3PN package Complement to type 2SA1102 High power dissipation High current capability APPLICATIONS Audio power amplifier DC-DC converter PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Abs

 8.4. Size:153K  jmnic
 2sc2579.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC2579 DESCRIPTION With TO-3PN package High power dissipation High current capability APPLICATIONS For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings

 8.5. Size:106K  jmnic
 2sc2578.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC2578 DESCRIPTION With TO-3PN package Complementary to 2SA1104 High Power Dissipation High Current Capability APPLICATIONS Audio power amplifier DC TO DC Converter PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and sym

 8.6. Size:201K  inchange semiconductor
 2sc2577.pdf

isc Silicon NPN Power Transistor 2SC2577 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1102 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

 8.7. Size:202K  inchange semiconductor
 2sc2579.pdf

isc Silicon NPN Power Transistor 2SC2579 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Good Linearity of h FE High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Col

 8.8. Size:202K  inchange semiconductor
 2sc2578.pdf

isc Silicon NPN Power Transistor 2SC2578 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1103 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V