2SC2579 Todos los transistores

 

2SC2579 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC2579

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 80 W

Tensión colector-base (Vcb): 160 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 10 MHz

Capacitancia de salida (Cc): 200 pF

Ganancia de corriente contínua (hFE): 80

Encapsulados: TO218

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2SC2579 datasheet

 ..1. Size:153K  jmnic
2sc2579.pdf pdf_icon

2SC2579

JMnic Product Specification Silicon NPN Power Transistors 2SC2579 DESCRIPTION With TO-3PN package High power dissipation High current capability APPLICATIONS For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings

 ..2. Size:202K  inchange semiconductor
2sc2579.pdf pdf_icon

2SC2579

isc Silicon NPN Power Transistor 2SC2579 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Good Linearity of h FE High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Col

 8.1. Size:119K  nec
2sc2570a.pdf pdf_icon

2SC2579

DATA SHEET NPN SILICON TRANSISTOR 2SC2570A HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC2570A is designed for use in Low Noise Amplifier of VHF & UHF stages. FEATURES Low noise and high gain NF = 1.5 dB TYP., Ga = 8 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 5.0 mA Wide dynamic range NF = 1.9 dB, Ga = 9 dB @f = 1 GHz, VCE = 10 V, IC = 1

 8.2. Size:25K  wingshing
2sc2577.pdf pdf_icon

2SC2579

2SC2577 NPN PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SA1102 ABSOLUTE MAXIMUM RATING (Ta=25 C C) C C Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 160 V Collector-Emitter Voltage VCEO 120 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 8 A Collector

Otros transistores... 2SC2571-1 , 2SC2571-2 , 2SC2572 , 2SC2573 , 2SC2575 , 2SC2575L , 2SC2577 , 2SC2578 , B647 , 2SC258 , 2SC2580 , 2SC2581 , 2SC2582 , 2SC2584 , 2SC2586 , 2SC2587 , 2SC2587A .

History: 2SD1065S | BUL128FP

 

 

 


History: 2SD1065S | BUL128FP

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