2SC2588A Todos los transistores

 7.1. Size:214K  inchange semiconductor
 2sc2588.pdf

isc Silicon NPN Power Transistor 2SC2564 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 140V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1094 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL

 8.1. Size:49K  wingshing
 2sc2580.pdf

2SC2580 NPN PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SA1105 ABSOLUTE MAXIMUM RATING (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage VCEO 120 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 9 A

 8.2. Size:25K  wingshing
 2sc2581.pdf

2SC2581 NPN PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SA1106 ABSOLUTE MAXIMUM RATING (Ta=25 C C) C C Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 200 V Collector-Emitter Voltage VCEO 140 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 10 A Collecto

 8.3. Size:20K  advanced-semi
 2sc2585.pdf

2SC2585 NPN SILICON RF TRANSISTOR PACKAGE STYLE DESCRIPTION The 2SC2585 is a Common Emitter Device Designed for Low Niose Amplifier and Medium Power Oscillator Applications up to 8.5 GHz. MAXIMUM RATINGS IC 65 mA VCEO 12 V VCBO 25 V VEB 1.5 V PT 400 mW @ TC = 166 OC TJ -65 OC to +200 OC TSTG -65 OC to +200 OC DIMENSIONS IN MILLIMETERS 1 = BASE 3 = COLLECTOR 85 OC/W JC 2 &

 8.4. Size:156K  jmnic
 2sc2582.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC2582 DESCRIPTION With TO-126 package Large collector power dissipation High transition frequency APPLICATIONS Audio frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT

 8.5. Size:146K  jmnic
 2sc2580.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC2580 DESCRIPTION With TO-3PN package Complement to type 2SA1105 High power dissipation High current capability APPLICATIONS Audio power amplifier DC-DC converter PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Abs

 8.6. Size:146K  jmnic
 2sc2581.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC2581 DESCRIPTION With TO-3PN package Complement to type 2SA1106 High power dissipation High current capability APPLICATIONS Audio power amplifier DC-DC converter PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Abs

 8.7. Size:171K  cn sptech
 2sc2581.pdf

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC2581 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min) (BR)CEO Good Linearity of h FE High Power Dissipation Complement to Type 2SA1106 APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage

 8.8. Size:196K  inchange semiconductor
 2sc2582.pdf

isc Silicon NPN Power Transistor 2SC2582 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 35V(Min) (BR)CEO Good Linearity of h FE High Collector Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for AF power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN

 8.9. Size:202K  inchange semiconductor
 2sc2580.pdf

isc Silicon NPN Power Transistor 2SC2580 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Good Linearity of h FE High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Col

 8.10. Size:196K  inchange semiconductor
 2sc2581.pdf

isc Silicon NPN Power Transistor 2SC2581 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min) (BR)CEO Good Linearity of h FE High Power Dissipation Complement to Type 2SA1106 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a