2SC2590 Todos los transistores

 ..1. Size:80K  panasonic
 2sc2590.pdf

Power Transistors 2SC2590 Silicon NPN epitaxial planar type For low-frequency power amplification Unit mm 8.0+0.5 0.1 3.2 0.2 3.16 0.1 Features Excellent collector current IC characteristics of forward current transfer ratio hFE High transition frequency fT TO-126B package which requires no insulation plate for installa- tion to the heat sink Absolute

 ..2. Size:181K  jmnic
 2sc2590.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC2590 DESCRIPTION With TO-126 package Complement to type 2SA1110 Excellent current IC characteristics of forward current transfer ratio hFE vs. collector High transition frequency fT Optimum for the driver stage of a 40 W to 60 W output amplifier APPLICATIONS For low-frequency power amplification

 ..3. Size:198K  inchange semiconductor
 2sc2590.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2590 DESCRIPTION Silicon NPN epitaxial planar type High transition frequency Complementary to 2SA1110 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For low-frequency power amplification ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER V

 8.1. Size:83K  panasonic
 2sc2594.pdf

 8.2. Size:62K  no
 2sc2591.pdf

 8.3. Size:114K  jmnic
 2sc2591 2sc2592.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC2591 2SC2592 DESCRIPTION With TO-220 package Complement to type 2SA1111/1112 Good linearity of hFE High VCEO APPLICATIONS For audio frequency, high power amplifiers application PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Fig.1 simplified outline (TO-

 8.4. Size:191K  inchange semiconductor
 2sc2594.pdf

isc Silicon NPN Power Transistor 2SC2594 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 20V(Min) (BR)CEO Good Linearity of h FE Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS AF power amplifier For electronic flash unit Converter ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR

 8.5. Size:166K  inchange semiconductor
 2sc2591 2sc2592.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2591 2SC2592 DESCRIPTION With TO-220 package Complement to type 2SA1111/1112 Good linearity of hFE High VCEO APPLICATIONS For audio frequency, high power amplifiers application PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-22

 8.6. Size:187K  inchange semiconductor
 2sc2592.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SC2592 DESCRIPTION Silicon NPN epitaxial planar type High transition frequency Complement to Type 2SA1112 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS AF Driver,High power Amplifier complementary Pairs with 2SA1112. ABSOLUTE MAXIMUM RATINGS(T