2SC260 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2608DESCRIPTIONWith TO-3 PackageComplementary to 2SA1117100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 200 VCBOV

2SC2670 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2670 High Frequency Amplifier Applications Unit: mm AM High Frequency Amplifier Applications AM Frequency Converter Applications Low noise figure: NF = 3.5dB (max) (f = 1 MHz) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 35 VCollector-emitter v

2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2655 Industrial Applications Power Amplifier Applications Unit: mmPower Switching Applications Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) High collector power dissipation: PC = 900 mW High-speed switching: tstg = 1.0 s (typ.) Complementary to 2SA1020. Absolute Maximum

2SC2644 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2644 VHF~UHF Band Wideband Amplifier Applications Unit: mm High gain Low IMD fT = 4 GHz (typ.) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 25 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3.0 VCollector current IC 120 mA

2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2655 Industrial Applications Power Amplifier Applications Unit: mmPower Switching Applications Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) High collector power dissipation: PC = 900 mW High-speed switching: tstg = 1.0 s (typ.) Complementary to 2SA1020. Absolute Maximum

2SC2669 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2669 High Frequency Amplifier Applications Unit: mm High power gain: Gpe = 30dB (typ.) (f = 10.7 MHz) Recommended for FM IF, OSC stage and AM CONV, IF stage. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 35 VCollector-emitter voltage VC

2SC2668 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2668 High Frequency Amplifier Applications Unit: mm FM, RF, IF Amplifier Applications Small reverse transfer capacitance: Cre = 0.70 pF (typ.) Low noise figure: NF = 2.5dB (typ.) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 40 VColle

Preliminary Datasheet R07DS0273EJ03002SC2618 (Previous: REJ03G0702-0200)Rev.3.00Silicon NPN Epitaxial Mar 28, 2011Application Low frequency amplifier Complementary pair with 2SA1121 Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK)1. Emitter32. Base3. Collector12Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings UnitCollec

DATA SHEETSILICON POWER TRANSISTOR2SC2654NPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHINGFEATURES PACKAGE DRAWING (UNIT: mm) Large current capacitance in small dimension: IC(DC) = 7 A Low collector saturation voltage:VCE(sat) = 0.3 V MAX. (IC = 3.0 A) Ideal for use in a lamp driver Complementary transistor: 2SA1129ABSOL

MCCMicro Commercial ComponentsTM 2SC2655L-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SC2655L-YPhone: (818) 701-4933Fax: (818) 701-4939Features Halogen free available upon request by adding suffix "-HF" Collector of 0.9Watts of Power Dissipation. NPN Collector-current 2.0A Plastic-Encapsulate Operating and storage junction temper

MCCMicro Commercial ComponentsTM 2SC2655L-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SC2655L-YPhone: (818) 701-4933Fax: (818) 701-4939Features Halogen free available upon request by adding suffix "-HF" Collector of 0.9Watts of Power Dissipation. NPN Collector-current 2.0A Plastic-Encapsulate Operating and storage junction temper

MCCMicro Commercial ComponentsTM 2SC2655-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SC2655-YPhone: (818) 701-4933Fax: (818) 701-4939Features Halogen free available upon request by adding suffix "-HF" Collector of 0.9Watts of Power Dissipation. NPN Collector-current 2.0A Plastic-Encapsulate Operating and storage junction temperat

M C CTM2SC2668-RMicro Commercial Components Micro Commercial Components2SC2668-O20736 Marilla Street ChatsworthCA 913112SC2668-YPhone: (818) 701-4933Fax: (818) 701-4939NPNFeatures Lead Free Finish/Rohs Compliant ("P"Suffix designates Plastic-EncapsulateCompliant. See ordering information) Transistors Epoxy meets UL 94 V-0 flammability rating Moistu

MCCMicro Commercial ComponentsTM 2SC2655-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SC2655-YPhone: (818) 701-4933Fax: (818) 701-4939Features Halogen free available upon request by adding suffix "-HF" Collector of 0.9Watts of Power Dissipation. NPN Collector-current 2.0A Plastic-Encapsulate Operating and storage junction temperat

M C CTM2SC2668-RMicro Commercial Components Micro Commercial Components2SC2668-O20736 Marilla Street ChatsworthCA 913112SC2668-YPhone: (818) 701-4933Fax: (818) 701-4939NPNFeatures Lead Free Finish/Rohs Compliant ("P"Suffix designates Plastic-EncapsulateCompliant. See ordering information) Transistors Epoxy meets UL 94 V-0 flammability rating Moistu

M C CTM2SC2668-RMicro Commercial Components Micro Commercial Components2SC2668-O20736 Marilla Street ChatsworthCA 913112SC2668-YPhone: (818) 701-4933Fax: (818) 701-4939NPNFeatures Lead Free Finish/Rohs Compliant ("P"Suffix designates Plastic-EncapsulateCompliant. See ordering information) Transistors Epoxy meets UL 94 V-0 flammability rating Moistu

Transistor2SC2671(F)Silicon NPN epitaxial planer typeFor UHF band low-noise amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesLow noise figure NF.High gain.High transition frequency fT.Absolute Maximum Ratings (Ta=25C)+0.2 +0.2Parameter Symbol Ratings Unit0.45 0.1 0.45 0.1Collector to base voltage VCBO 15 V1.27 1.27Collector to emitter voltage VCER* 14 VE

Transistor2SC2671(F)Silicon NPN epitaxial planer typeFor UHF band low-noise amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesLow noise figure NF.High gain.High transition frequency fT.Absolute Maximum Ratings (Ta=25C)+0.2 +0.2Parameter Symbol Ratings Unit0.45 0.1 0.45 0.1Collector to base voltage VCBO 15 V1.27 1.27Collector to emitter voltage VCER* 14 VE

Transistor2SC2631Silicon NPN epitaxial planer typeFor low-frequency high breakdown voltage amplificationUnit: mmComplementary to 2SA11235.0 0.2 4.0 0.2FeaturesSatisfactory linearity of forward current transfer ratio hFE.High collector to emitter voltage VCEO.Small collector output capacitance Cob.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2

Transistor2SC2636Silicon NPN epitaxial planer typeFor high-frequency amplification/oscillationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9High transition frequency fT.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.85Absolute Maximum Ratings (Ta=25C) 0.55 0.1 0.45 0.05Paramete

Transistor2SC2634Silicon NPN epitaxial planer typeFor low-frequency and low-noise amplificationUnit: mmComplementary to 2SA11275.0 0.2 4.0 0.2FeaturesLow noise voltage NV.High foward current transfer ratio hFE.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.2Collector to base voltage VCBO 60 V 0.45 0.1 0.45 0.11.27 1.27Collector to

Transistor2SC2634Silicon NPN epitaxial planer typeFor low-frequency and low-noise amplificationUnit: mmComplementary to 2SA11275.0 0.2 4.0 0.2FeaturesLow noise voltage NV.High foward current transfer ratio hFE.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.2Collector to base voltage VCBO 60 V 0.45 0.1 0.45 0.11.27 1.27Collector to

Transistor2SC2647Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0R0.9FeaturesOptimum for RF amplification, oscillation, mixing, and IF of FM/AM radios.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.850.55 0.1 0.45 0.05Absolute Ma

Transistor2SC2631Silicon NPN epitaxial planer typeFor low-frequency high breakdown voltage amplificationUnit: mmComplementary to 2SA11235.0 0.2 4.0 0.2FeaturesSatisfactory linearity of forward current transfer ratio hFE.High collector to emitter voltage VCEO.Small collector output capacitance Cob.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2

Transistor2SC2632Silicon NPN epitaxial planer typeFor low-frequency high breakdown voltage amplificationUnit: mmComplementary to 2SA11245.9 0.2 4.9 0.2FeaturesSatisfactory linearity of forward current transfer ratio hFE.High collector to emitter voltage VCEO.Small collector output capacitance Cob.0.7 0.12.54 0.15Absolute Maximum Ratings (Ta=25C)Parameter Sy

Transistor2SC2632Silicon NPN epitaxial planer typeFor low-frequency high breakdown voltage amplificationUnit: mmComplementary to 2SA11245.9 0.2 4.9 0.2FeaturesSatisfactory linearity of forward current transfer ratio hFE.High collector to emitter voltage VCEO.Small collector output capacitance Cob.0.7 0.12.54 0.15Absolute Maximum Ratings (Ta=25C)Parameter Sy

Transistor2SC2647Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0R0.9FeaturesOptimum for RF amplification, oscillation, mixing, and IF of FM/AM radios.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.850.55 0.1 0.45 0.05Absolute Ma

UNISONIC TECHNOLOGIES CO., LTD 2SC2655 NPN SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage: VCE(SAT)= 0.5V (Max.) * High speed switching time: TSTG=1.0s (Typ.) ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3- 2SC2655Gx-AB3-R SOT-89 B C E Tape Reel-

UNISONIC TECHNOLOGIES CO., LTD 2SC2688 NPN SILICON TRANSISTOR NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. (E-B reverse bias, C=2300pF) * Low Cre, High fT Cre 3.0 pF (VCB=30V) fT 50MHz (VCE=30V, IE=-10mA) ORDERING INFORMATION O

UNISONIC TECHNOLOGIES CO., LTD 2SC2655 NPN SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage: VCE(SAT)= 0.5V (Max.) * High speed switching time: TSTG=1.0s (Typ.) ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 32SC2655L-x-AB3-R 2SC2655G-x-AB3-R SOT-89 B C E T

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

2SC2611Silicon NPN Triple DiffusedApplicationHigh voltage amplifier TV VIDEO outputOutlineTO-126 MOD1. Emitter2. Collector3. Base123Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 300 VCollector to emitter voltage VCEO 300 VEmitter to base voltage VEBO 5VCollector current IC 100 mACollector power dissipation PC 1.25

2SC2619Silicon NPN EpitaxialApplicationHigh frequency amplifierOutlineMPAK311. Emitter2. Base23. Collector2SC2619Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 30 VEmitter to base voltage VEBO 5VCollector current IC 100 mACollector power dissipation PC 150 mWJunction tempe

2SC2612Silicon NPN Triple DiffusedApplicationHigh voltage, high speed and high power switchingOutlineTO-220AB1. Base2. Collector(Flange)13. Emitter23Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 500 VCollector to emitter voltage VCEO 400 VEmitter to base voltage VEBO 7VCollector current IC 3ACollector peak curre

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

2SC2618Silicon NPN EpitaxialApplication Low frequency amplifier Complementary pair with 2SA1121OutlineMPAK311. Emitter2. Base23. Collector2SC2618Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 35 VCollector to emitter voltage VCEO 35 VEmitter to base voltage VEBO 4VCollector current IC 500 mACollector pow

2SC2610Silicon NPN Triple DiffusedApplication High voltage amplifier TV Video outputOutlineTO-92 (1)1. Emitter2. Collector3. Base3212SC2610Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 300 VCollector to emitter voltage VCEO 300 VEmitter to base voltage VEBO 5VCollector current IC 100 mACollector power d

2SC2620Silicon NPN Epitaxial PlanarApplicationVHF amplifier, Local oscillatorOutlineMPAK311. Emitter2. Base23. Collector2SC2620Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 20 VEmitter to base voltage VEBO 4VCollector current IC 20 mACollector power dissipation PC 100 mWJ

AAA

2SC2655 2A , 50V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92MOD FEATURES Low saturation voltageVCE(sat)=0.5V(Max)(IC=1A) AD High speed switching timetstg=1s(Typ.) B Complementary to 2SA1020 KEFCLASSIFICATION OF hFE (1) CProduct-Rank 2SC2655-O

2SC2668 0.02A , 40V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92S Small Reverse Transfer Capacitance. Low Noise Figure. Millimeter REF. Min. Max. A 3.90 4.10 B 3.05 3.25 CLASSIFICATION OF hFE C 1.42 1.62 D 15.1 15.5 Product-Rank 2SC2668-R 2SC2668-O 2SC2

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SC2688 TRANSISTOR (NPN)TO-126 FEATURES 1. EMITTERColor TV chroma out pupt circuits 2. COLLECOTR3. BASE Equivalent Circuit C2688=Device code Solid dot = Green molding compound device, if none, the normal device C2688 XXXXXX=Code ORDERING INFORMATION Part Number

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors JC TTO-92L 2SC2655 TRANSISTOR (NPN) FEATURES 1.EMITTER Low Saturation Voltage: VCE(sat)=0.5V(Max)(IC=1A) 2.COLLECTOR High Speed Switching Time: tstg=1s(Typ.) Complementary to 2SA1020 3.BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Symbol UnitVCB

2SC2688(NPN) TO-126 TransistorTO-1261. EMITTER 2. COLLECOTR 3. BASE 3 21 Features Color TV chroma out pupt circuits 2.5007.4002.9001.1007.8001.5003.9003.0004.1003.200Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) 10.6000.00011.0000.300Symbol Parameter Value Units2.100VCBO 300 VCollector-Emitter

2SC2655 TO-92L Transistor (NPN)TO-92L1.EMITTER 2.COLLECTOR 3.BASE 4.700 2 3 5.1001Features Low saturation voltage: VCE(sat)=0.5V(Max)(IC=1A) 7.800 High speed switching time: tstg=1s(Typ.) 8.200 Complementary to 2SA1020 0.6000.800MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.350Symbol Parameter Symbol Units0.55013.800VCBO Collector-Base Vo

2SC2655 TO-92MOD Transistor (NPN)1.EMITTER TO-92MOD1 22.COLLECTOR 3 3.BASE Features5.800 Low saturation voltage: VCE(sat)=0.5V(Max)(IC=1A) 6.200 High speed switching time: tstg=1s(Typ.) Complementary to 2SA1020 8.4008.800MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.9001.100Symbol Parameter Symbol Units0.4000.600VCBO Collector-Base Voltag

2SC2668 TO-92S Transistor (NPN) 1. EMITTER TO-92S 2. COLLECTOR 1 2 3 3. BASE Features Small reverse transfer capacitance Low Noise Figure MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 4 V Dimensions in inches and (millimeters)IC Co

2SC2655NPN General Purpose TransistorsP b Lead(Pb)-Free1231.EMITTER3.BASE2.COLLECTORTO-92MOD ELECTRICAL CHARACTERISTICSTamb=25 unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNITCollector-base breakdown voltage V(BR)CBO VIc=100A,IE=0 50 Collector-emitter breakdown voltage V(BR)CEO VIc=10mA,IB=0 50 Emitter-base breakdown voltag

2SC2655 Rev.F Sep.-2017 DATA SHEET / Descriptions TO-92LM NPN Silicon NPN transistor in a TO-92LM Plastic Package. / Features ,, 2SA1020 Low saturation voltage, high speed switching time, complementary to 2SA1020. / Applications ,Power amplifier and

RoHS 2SC2625B RoHS SEMICONDUCTORNell High Power ProductsSilicon NPN triple diffusion planar transistor(High voltage switching transistor)10A/400V/80W15.60.44.80.29.62.00.13.20,1TO-3P(B)23FEATURES+0.2+0.20.651.05-0.1-0.1 High-speed switching High collector to base voltage VCBO5.450.1 5.450.11.4 Satisfactory linearity of foward cur

SMD Type TransistorsNPN Transistors2SC2619SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=100mA1 2 Collector Emitter Voltage VCEO=30V+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collec

SMD Type TransistorsNPN Transistors2SC2618SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=500mA Collector Emitter Voltage VCEO=35V1 2+0.1+0.050.95 -0.1 0.1 -0.01 Complementary to 2SA1121+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collecto

SMD Type TransistorsNPN Transistors2SC2620SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=20mA1 2 Collector Emitter Voltage VCEO=20V+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect

2SC2654(3DA2654) NPN /SILICON NPN TRANSISTOR : Purpose: For low-frequency power amplifiers and mid-speed switching. , 2SA1129(3CA1129) Features: Large current capacity with small package, low collector saturation voltage, pair with 2SA1129(3CA1129). /Absolute

2SC2688(3DA2688) NPN /SILICON NPN TRANSISTOR : Purpose: Color TV chroma output circuits. :C ,f re TFeatures: Low C , high f . re T/Absolute maximum ratings(Ta=25) Symbol Rating Unit V 300 V CBO V 300 V CEO V 5.0 V EBO I 200 mA C P (Ta=25)

2SC2611(3DA2611) NPN /SILICON NPN TRANSISTOR :, &[]Purpose: High voltage amplifier, TV video output. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 300 V CBO V 300 V CEO V 5.0 V EBO I 100 mA C P 1.25 W CT 150 j T -55150

2SC2621(3DA2621) NPN /SILICON NPN TRANSISTOR : Purpose: Color TV chroma output applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 300 V CBO V 300 V CEO V 6.5 V EBO I 200 mA C I 700 mA CP P (Ta=25) 1.2 W CP (Tc=25) 10 W CT 150

2SC2625T4TLSilicon NPN Power TransistorDESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 450 V

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC2625DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

isc Silicon NPN Power Transistor 2SC2616DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 400V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed and high powerswitching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UN

isc Silicon NPN Power Transistor 2SC2658DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 500V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Collector-Base Voltage

isc Silicon NPN Power Transistor 2SC2688DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 50mA, I = 5mACE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in Color TV chroma output circuits.ABSOLUTE MAXIMUM RATINGS(T =2

isc Silicon NPN Power Transistor 2SC2650DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator applicaition.High voltage switching application.High speed DC-DC converter application.A

isc Silicon NPN Power Transistor 2SC2611DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high frequency high voltage amplifierand TV viedo output applications.ABSOLUTE MAXIMUM RATI

isc Silicon NPN Power Transistor 2SC2681DESCRIPTIONCollector-Emitter Breakdown Voltage-V = 115V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1141Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifierHigh frequency power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2660 2SC2660A DESCRIPTION With TO-220 package Complement to type 2SA1133/1133A High VCEO Large PC APPLICATIONS Power amplifier applications TV vertical deflection applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ra

isc Silicon NPN Power Transistor 2SC2624DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXI

isc Silicon NPN Pow Transistor 2SC2655DESCRIPTIONSilicon NPN epitaxial typeLow saturation voltageComplementary to 2SA1020100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsPower switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2690DESCRIPTIONHigh voltage and high fTComplementary to 2SA1220 PNP transistor100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThe 2SC2690 is general purpose transistors designedFor use in audio and radio frequency power amplifiers.Suitable

isc Silicon NPN Power Transistor 2SC2656DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsDC-DC converterSolid state relayGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T

isc Silicon NPN Power Transistor 2SC2665DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifierapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Ba

isc Silicon NPN Power Transistor 2SC2612DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)Good Linearity of hFELow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed and high powerswitching applications.ABSOLUTE MAXIMUM RATINGS(T =25)

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2615DESCRIPTIONLow Collector Saturation VoltageHigh Collector-Emitter Breakdown VoltageGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage ,high speed and high powerSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25

isc Silicon NPN Power Transistor 2SC2654DESCRIPTIONHigh Collector Current:: I = 7ACLow Collector Saturation Voltage:V = 0.3(V)(Max)@I = 3ACE(sat) CComplement to Type 2SA1129Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-frequency power amplifiers and mid-speedswitching applications.Ideal for use

isc Silicon NPN Power Transistor 2SC2613DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)Good Linearity of hFELow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed and high powerswitching applications.ABSOLUTE MAXIMUM RATINGS(T =25)

isc Silicon NPN Power Transistor 2SC2659DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 500V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Collector-Base Voltage

isc Silicon NPN Power Transistor 2SC2660DESCRIPTIONCollector-Emitter Breakdown Voltage-V = 150V (Min)(BR)CEOLarge Collector Power DissipationComplement to Type 2SA1133Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier and TV vertical deflectionoutput applications.ABSOLUTE MAXIMUM RATINGS(Ta=

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2682DESCRIPTIONHigh voltageLow Saturation VoltageComplementary to 2SA1142 PNP transistor100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThe 2SC2682 is designed for use in audio frequencypower amplifierABSOLUTE MAXIMUM RATINGS(T =25)

isc Silicon NPN Power Transistor 2SC2657DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 500V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Collector-Base Voltage

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2625DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2690 2SC2690A DESCRIPTION With TO-126 package Complement to type 2SA1220/1220A APPLICATIONS For use in audio and radio frequency power amplifiers PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CON

isc Silicon NPN Power Transistor 2SC2626DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXI