2SC2656 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC2656
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 80 W
Tensión colector-base (Vcb): 450 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 7 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 10
Encapsulados: TOP3
Búsqueda de reemplazo de 2SC2656
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2SC2656 datasheet
..1. Size:124K fuji
2sc2656.pdf 
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
..2. Size:198K inchange semiconductor
2sc2656.pdf
isc Silicon NPN Power Transistor 2SC2656 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators DC-DC converter Solid state relay General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T
8.1. Size:167K toshiba
2sc2655o 2sc2655y.pdf
2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2655 Industrial Applications Power Amplifier Applications Unit mm Power Switching Applications Low saturation voltage VCE (sat) = 0.5 V (max) (IC = 1 A) High collector power dissipation PC = 900 mW High-speed switching tstg = 1.0 s (typ.) Complementary to 2SA1020. Absolute Maximum
8.2. Size:148K toshiba
2sc2655.pdf
2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2655 Industrial Applications Power Amplifier Applications Unit mm Power Switching Applications Low saturation voltage VCE (sat) = 0.5 V (max) (IC = 1 A) High collector power dissipation PC = 900 mW High-speed switching tstg = 1.0 s (typ.) Complementary to 2SA1020. Absolute Maximum
8.3. Size:96K nec
2sc2654.pdf
DATA SHEET SILICON POWER TRANSISTOR 2SC2654 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES PACKAGE DRAWING (UNIT mm) Large current capacitance in small dimension IC(DC) = 7 A Low collector saturation voltage VCE(sat) = 0.3 V MAX. (IC = 3.0 A) Ideal for use in a lamp driver Complementary transistor 2SA1129 ABSOL
8.4. Size:385K mcc
2sc2655l-o.pdf
MCC Micro Commercial Components TM 2SC2655L-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC2655L-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Halogen free available upon request by adding suffix "-HF" Collector of 0.9Watts of Power Dissipation. NPN Collector-current 2.0A Plastic-Encapsulate Operating and storage junction temper
8.5. Size:385K mcc
2sc2655l-y.pdf
MCC Micro Commercial Components TM 2SC2655L-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC2655L-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Halogen free available upon request by adding suffix "-HF" Collector of 0.9Watts of Power Dissipation. NPN Collector-current 2.0A Plastic-Encapsulate Operating and storage junction temper
8.6. Size:405K mcc
2sc2655-o.pdf
MCC Micro Commercial Components TM 2SC2655-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC2655-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Halogen free available upon request by adding suffix "-HF" Collector of 0.9Watts of Power Dissipation. NPN Collector-current 2.0A Plastic-Encapsulate Operating and storage junction temperat
8.7. Size:405K mcc
2sc2655-y.pdf
MCC Micro Commercial Components TM 2SC2655-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC2655-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Halogen free available upon request by adding suffix "-HF" Collector of 0.9Watts of Power Dissipation. NPN Collector-current 2.0A Plastic-Encapsulate Operating and storage junction temperat
8.8. Size:281K utc
2sc2655l-o 2sc2655l-y.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SC2655 NPN SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage VCE(SAT)= 0.5V (Max.) * High speed switching time TSTG=1.0 s (Typ.) ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 - 2SC2655Gx-AB3-R SOT-89 B C E Tape Reel -
8.9. Size:345K utc
2sc2655.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SC2655 NPN SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage VCE(SAT)= 0.5V (Max.) * High speed switching time TSTG=1.0 s (Typ.) ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC2655L-x-AB3-R 2SC2655G-x-AB3-R SOT-89 B C E T
8.10. Size:212K secos
2sc2655.pdf
2SC2655 2A , 50V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92MOD FEATURES Low saturation voltage VCE(sat)=0.5V(Max)(IC=1A) A D High speed switching time tstg=1 s(Typ.) B Complementary to 2SA1020 K E F CLASSIFICATION OF hFE (1) C Product-Rank 2SC2655-O
8.11. Size:11940K jiangsu
2sc2655.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors JC T TO-92L 2SC2655 TRANSISTOR (NPN) FEATURES 1.EMITTER Low Saturation Voltage VCE(sat)=0.5V(Max)(IC=1A) 2.COLLECTOR High Speed Switching Time tstg=1 s(Typ.) Complementary to 2SA1020 3.BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Symbol Unit VCB
8.12. Size:251K lge
2sc2655 to-92l.pdf
2SC2655 TO-92L Transistor (NPN) TO-92L 1.EMITTER 2.COLLECTOR 3.BASE 4.700 2 3 5.100 1 Features Low saturation voltage VCE(sat)=0.5V(Max)(IC=1A) 7.800 High speed switching time tstg=1 s(Typ.) 8.200 Complementary to 2SA1020 0.600 0.800 MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.350 Symbol Parameter Symbol Units 0.550 13.800 VCBO Collector-Base Vo
8.13. Size:276K lge
2sc2655 to-92mod.pdf
2SC2655 TO-92MOD Transistor (NPN) 1.EMITTER TO-92MOD 1 2 2.COLLECTOR 3 3.BASE Features 5.800 Low saturation voltage VCE(sat)=0.5V(Max)(IC=1A) 6.200 High speed switching time tstg=1 s(Typ.) Complementary to 2SA1020 8.400 8.800 MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.900 1.100 Symbol Parameter Symbol Units 0.400 0.600 VCBO Collector-Base Voltag
8.14. Size:277K wietron
2sc2655.pdf
2SC2655 NPN General Purpose Transistors P b Lead(Pb)-Free 1 2 3 1.EMITTER 3.BASE 2.COLLECTOR TO-92MOD ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO V Ic=100 A,IE=0 50 Collector-emitter breakdown voltage V(BR)CEO V Ic=10mA,IB=0 50 Emitter-base breakdown voltag
8.15. Size:1426K blue-rocket-elect
2sc2655.pdf
2SC2655 Rev.F Sep.-2017 DATA SHEET / Descriptions TO-92LM NPN Silicon NPN transistor in a TO-92LM Plastic Package. / Features , , 2SA1020 Low saturation voltage, high speed switching time, complementary to 2SA1020. / Applications , Power amplifier and
8.16. Size:254K foshan
2sc2654 3da2654.pdf
2SC2654(3DA2654) NPN /SILICON NPN TRANSISTOR Purpose For low-frequency power amplifiers and mid-speed switching. , 2SA1129(3CA1129) Features Large current capacity with small package, low collector saturation voltage, pair with 2SA1129(3CA1129). /Absolute
8.17. Size:189K inchange semiconductor
2sc2658.pdf
isc Silicon NPN Power Transistor 2SC2658 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 500V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Collector-Base Voltage
8.18. Size:211K inchange semiconductor
2sc2650.pdf
isc Silicon NPN Power Transistor 2SC2650 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator applicaition. High voltage switching application. High speed DC-DC converter application. A
8.19. Size:204K inchange semiconductor
2sc2655.pdf
isc Silicon NPN Pow Transistor 2SC2655 DESCRIPTION Silicon NPN epitaxial type Low saturation voltage Complementary to 2SA1020 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Power switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V
8.20. Size:197K inchange semiconductor
2sc2654.pdf
isc Silicon NPN Power Transistor 2SC2654 DESCRIPTION High Collector Current I = 7A C Low Collector Saturation Voltage V = 0.3(V)(Max)@I = 3A CE(sat) C Complement to Type 2SA1129 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-frequency power amplifiers and mid-speed switching applications. Ideal for use
8.21. Size:188K inchange semiconductor
2sc2659.pdf
isc Silicon NPN Power Transistor 2SC2659 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 500V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Collector-Base Voltage
8.22. Size:189K inchange semiconductor
2sc2657.pdf
isc Silicon NPN Power Transistor 2SC2657 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 500V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Collector-Base Voltage
Otros transistores... 2SC2650, 2SC2651, 2SC2652, 2SC2653, 2SC2654, 2SC2655, 2SC2655O, 2SC2655Y, S9018, 2SC2657, 2SC2657A, 2SC2658, 2SC2658A, 2SC2659, 2SC266, 2SC2660, 2SC2660A
