2SC2680 Todos los transistores

 8.1. Size:57K  nec
 2sc2688.pdf

 8.2. Size:64K  nec
 2sc2682.pdf

 8.3. Size:256K  utc
 2sc2688.pdf

UNISONIC TECHNOLOGIES CO., LTD 2SC2688 NPN SILICON TRANSISTOR NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES * High Electrostatic-Discharge-Resistance. ESDR 1000V TYP. (E-B reverse bias, C=2300pF) * Low Cre, High fT Cre 3.0 pF (VCB=30V) fT 50MHz (VCE=30V, IE=-10mA) ORDERING INFORMATION O

 8.4. Size:32K  no
 2sa1141 2sc2681 2sc2681.pdf

 8.5. Size:660K  jiangsu
 2sc2688.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SC2688 TRANSISTOR (NPN) TO-126 FEATURES 1. EMITTER Color TV chroma out pupt circuits 2. COLLECOTR 3. BASE Equivalent Circuit C2688=Device code Solid dot = Green molding compound device, if none, the normal device C2688 XXX XXX=Code ORDERING INFORMATION Part Number

 8.6. Size:230K  lge
 2sc2688.pdf

2SC2688(NPN) TO-126 Transistor TO-126 1. EMITTER 2. COLLECOTR 3. BASE 3 2 1 Features Color TV chroma out pupt circuits 2.500 7.400 2.900 1.100 7.800 1.500 3.900 3.000 4.100 3.200 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) 10.600 0.000 11.000 0.300 Symbol Parameter Value Units 2.100 VCBO 300 V Collector-Emitter

 8.7. Size:157K  foshan
 2sc2688 3da2688.pdf

2SC2688(3DA2688) NPN /SILICON NPN TRANSISTOR Purpose Color TV chroma output circuits. C ,f re T Features Low C , high f . re T /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 300 V CBO V 300 V CEO V 5.0 V EBO I 200 mA C P (Ta=25 )

 8.8. Size:241K  inchange semiconductor
 2sc2688.pdf

isc Silicon NPN Power Transistor 2SC2688 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 300V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max)@ I = 50mA, I = 5mA CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in Color TV chroma output circuits. ABSOLUTE MAXIMUM RATINGS(T =2

 8.9. Size:202K  inchange semiconductor
 2sc2681.pdf

isc Silicon NPN Power Transistor 2SC2681 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 115V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1141 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power amplifier High frequency power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM

 8.10. Size:199K  inchange semiconductor
 2sc2682.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2682 DESCRIPTION High voltage Low Saturation Voltage Complementary to 2SA1142 PNP transistor 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS The 2SC2682 is designed for use in audio frequency power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 )