2SC2688R . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SC2688R
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 10 W
   Tensión colector-base (Vcb): 300 V
   Tensión colector-emisor (Vce): 300 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 50 MHz
   Capacitancia de salida (Cc): 3 pF
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: TO126

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2SC2688R Datasheet (PDF)

7.1. Size:57K nec
2sc2688.pdf

7.2. Size:256K utc
2sc2688.pdf

UNISONIC TECHNOLOGIES CO., LTD 2SC2688 NPN SILICON TRANSISTOR NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. (E-B reverse bias, C=2300pF) * Low Cre, High fT Cre 3.0 pF (VCB=30V) fT 50MHz (VCE=30V, IE=-10mA) ORDERING INFORMATION O

7.3. Size:660K jiangsu
2sc2688.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SC2688 TRANSISTOR (NPN)TO-126 FEATURES 1. EMITTERColor TV chroma out pupt circuits 2. COLLECOTR3. BASE Equivalent Circuit C2688=Device code Solid dot = Green molding compound device, if none, the normal device C2688 XXXXXX=Code ORDERING INFORMATION Part Number

7.4. Size:230K lge
2sc2688.pdf

2SC2688(NPN) TO-126 TransistorTO-1261. EMITTER 2. COLLECOTR 3. BASE 3 21 Features Color TV chroma out pupt circuits 2.5007.4002.9001.1007.8001.5003.9003.0004.1003.200Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) 10.6000.00011.0000.300Symbol Parameter Value Units2.100VCBO 300 VCollector-Emitter

7.5. Size:157K foshan
2sc2688 3da2688.pdf

2SC2688(3DA2688) NPN /SILICON NPN TRANSISTOR : Purpose: Color TV chroma output circuits. :C ,f re TFeatures: Low C , high f . re T/Absolute maximum ratings(Ta=25) Symbol Rating Unit V 300 V CBO V 300 V CEO V 5.0 V EBO I 200 mA C P (Ta=25)

7.6. Size:241K inchange semiconductor
2sc2688.pdf

isc Silicon NPN Power Transistor 2SC2688DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 50mA, I = 5mACE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in Color TV chroma output circuits.ABSOLUTE MAXIMUM RATINGS(T =2

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: DTC115EMFHA

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050