2N1893
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N1893
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.8
W
Tensión colector-base (Vcb): 120
V
Tensión colector-emisor (Vce): 80
V
Tensión emisor-base (Veb): 7
V
Corriente del colector DC máxima (Ic): 0.5
A
Temperatura operativa máxima (Tj): 200
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 50
MHz
Capacitancia de salida (Cc): 15
pF
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta:
TO5
Búsqueda de reemplazo de transistor bipolar 2N1893
2N1893
Datasheet (PDF)
..2. Size:51K philips
2n1893 cnv 2.pdf 
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1112N1893NPN medium power transistor1997 Apr 17Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN medium power transistor 2N1893FEATURES PINNING Low current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 80 V).1 emitt
..3. Size:311K st
2n1893.pdf
2N1893SMALL SIGNAL NPN TRANSISTOR GENERAL PURPOSE HIGH VOLTAGEDEVICEDESCRIPTION The 2N1893 is a Silicon Planar Epitaxial NPNtransistor in Jedec TO-39 metal case, designedfor use in high-performance amplifier, oscillatorand switching circuits. It provides greater voltageswings in oscillator and amplifier circuits andmore protection in inductive switching circuits dueto
..4. Size:64K central
2n1613 2n1711 2n1893.pdf
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
..5. Size:223K cdil
2n1893.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR TRANSISTORS 2N 1893TO-39Metal Can PackageGeneral Purpose Transistors.ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITSVCEOCollector Emitter Voltage 80 VVCERCollector Emitter Voltage 100 VVCBOCollector Base Voltage 120 V
..6. Size:55K microsemi
2n1893 2n720a.pdf
TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/182 Devices Qualified Level JAN 2N1893 2N720A JANTX 2N1893S JANTXV MAXIMUM RATINGS Ratings Symbol All Devices Units Collector-Emitter Voltage 80 Vdc VCEO Collector-Base Voltage 120 Vdc VCBO 7.0 Vdc Emitter-Base Voltage VEBO 100 Vdc TO-18 (TO-206AA)* Collector-Emitter Voltage (R = 10
0.1. Size:10K semelab
2n1893x.pdf
2N1893XDimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 80V dia.IC = 0.6A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1
Otros transistores... 2N1886
, 2N1889
, 2N188A
, 2N189
, 2N1890
, 2N1890S
, 2N1891
, 2N1892
, BD135
, 2N1893-46
, 2N1893A
, 2N1893L
, 2N1893S
, 2N1893UB
, 2N1894
, 2N1895
, 2N1896
.
