2SC2706 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc Silicon NPN Power Transistor 2SC2706DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min)(BR)CEOComplement to Type 2SA1146Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency low power amplifier applicationsRecommend for 70W audio frequency amplifier outputstage applicationsABSOLUTE MAXIMUM RA

2SC2705 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2705 Audio Frequency Amplifier Applications Unit: mm Small collector output capacitance: C = 1.8 pF (typ.) ob High transition frequency: fT = 200 MHz (typ.) Complementary to 2SA1145. Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 150 VCollector-em

2SC2703 TO-92L Transistor (NPN)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 2 3 4.70015.100Features7.800 High DC Current Gain: hFE=100-320 8.2000.6000.800 0.3500.55013.80014.200Dimensions in inches and (millimeters)1.270 TYPMAXIMUM RATINGS (TA=25 unless otherwise noted) 2.4402.640Symbol Parameter 0.000 Value Units1.6000.3000.350Collector-Ba

2SC2703 TO-92MOD Transistor (NPN)TO-92MOD1. EMITTER 1 22. COLLECTOR 3 3. BASE 5.8006.200Features 8.400 High DC Current Gain: hFE=100-320 8.8000.9001.1000.4000.60013.80014.200 1.500 TYP2.900Dimensions in inches and (millimeters)3.100MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.000 1.600Symbol Parameter 0.380 Value Units0.4004.7

isc Silicon NPN Power Transistor 2SC2705DESCRIPTIONCollector-Emitter sustaining Voltage: V =150V(Min)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio Frequency Amplifier ApplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 150 VCBOV Coll

isc Silicon NPN Power Transistor 2SC2707DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 180V(Min.)(BR)CEOHigh Power DissipationComplement to Type 2SA1147Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching amplifier and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY