2SC2706 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC2706
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 100 W
Tensión colector-base (Vcb): 140 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 10 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 45 MHz
Capacitancia de salida (Cc): 130 pF
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta: TO218
Búsqueda de reemplazo de transistor bipolar 2SC2706
2SC2706 Datasheet (PDF)
2sc2706.pdf
isc Silicon NPN Power Transistor 2SC2706DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min)(BR)CEOComplement to Type 2SA1146Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency low power amplifier applicationsRecommend for 70W audio frequency amplifier outputstage applicationsABSOLUTE MAXIMUM RA
2sc2705.pdf
2SC2705 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2705 Audio Frequency Amplifier Applications Unit: mm Small collector output capacitance: C = 1.8 pF (typ.) ob High transition frequency: fT = 200 MHz (typ.) Complementary to 2SA1145. Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 150 VCollector-em
2sc2703 to-92l.pdf
2SC2703 TO-92L Transistor (NPN)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 2 3 4.70015.100Features7.800 High DC Current Gain: hFE=100-320 8.2000.6000.800 0.3500.55013.80014.200Dimensions in inches and (millimeters)1.270 TYPMAXIMUM RATINGS (TA=25 unless otherwise noted) 2.4402.640Symbol Parameter 0.000 Value Units1.6000.3000.350Collector-Ba
2sc2703 to-92mod.pdf
2SC2703 TO-92MOD Transistor (NPN)TO-92MOD1. EMITTER 1 22. COLLECTOR 3 3. BASE 5.8006.200Features 8.400 High DC Current Gain: hFE=100-320 8.8000.9001.1000.4000.60013.80014.200 1.500 TYP2.900Dimensions in inches and (millimeters)3.100MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.000 1.600Symbol Parameter 0.380 Value Units0.4004.7
2sc2705.pdf
isc Silicon NPN Power Transistor 2SC2705DESCRIPTIONCollector-Emitter sustaining Voltage: V =150V(Min)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio Frequency Amplifier ApplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 150 VCBOV Coll
2sc2707.pdf
isc Silicon NPN Power Transistor 2SC2707DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 180V(Min.)(BR)CEOHigh Power DissipationComplement to Type 2SA1147Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching amplifier and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: BF370R
History: BF370R
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050