2SC2706 Todos los transistores

 ..1. Size:202K  inchange semiconductor
 2sc2706.pdf

isc Silicon NPN Power Transistor 2SC2706 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min) (BR)CEO Complement to Type 2SA1146 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency low power amplifier applications Recommend for 70W audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RA

 8.1. Size:125K  toshiba
 2sc2705.pdf

2SC2705 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2705 Audio Frequency Amplifier Applications Unit mm Small collector output capacitance C = 1.8 pF (typ.) ob High transition frequency fT = 200 MHz (typ.) Complementary to 2SA1145. Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-em

 8.2. Size:173K  toshiba
 2sc2703.pdf

 8.3. Size:195K  lge
 2sc2703 to-92l.pdf

2SC2703 TO-92L Transistor (NPN) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 2 3 4.700 1 5.100 Features 7.800 High DC Current Gain hFE=100-320 8.200 0.600 0.800 0.350 0.550 13.800 14.200 Dimensions in inches and (millimeters) 1.270 TYP MAXIMUM RATINGS (TA=25 unless otherwise noted) 2.440 2.640 Symbol Parameter 0.000 Value Units 1.600 0.300 0.350 Collector-Ba

 8.4. Size:216K  lge
 2sc2703 to-92mod.pdf

2SC2703 TO-92MOD Transistor (NPN) TO-92MOD 1. EMITTER 1 2 2. COLLECTOR 3 3. BASE 5.800 6.200 Features 8.400 High DC Current Gain hFE=100-320 8.800 0.900 1.100 0.400 0.600 13.800 14.200 1.500 TYP 2.900 Dimensions in inches and (millimeters) 3.100 MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.000 1.600 Symbol Parameter 0.380 Value Units 0.400 4.7

 8.5. Size:200K  inchange semiconductor
 2sc2705.pdf

isc Silicon NPN Power Transistor 2SC2705 DESCRIPTION Collector-Emitter sustaining Voltage V =150V(Min) CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio Frequency Amplifier Applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 150 V CBO V Coll

 8.6. Size:189K  inchange semiconductor
 2sc2707.pdf

isc Silicon NPN Power Transistor 2SC2707 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 180V(Min.) (BR)CEO High Power Dissipation Complement to Type 2SA1147 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY