2SC2714R Todos los transistores

 ..1. Size:552K  toshiba
 2sc2714r 2sc2714o 2sc2714y.pdf

2SC2714 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2714 High Frequency Amplifier Applications Unit mm FM, RF, MIX, IF Amplifier Applications Small reverse transfer capacitance Cre = 0.7 pF (typ.) Low noise figure NF = 2.5dB (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V Co

 7.1. Size:510K  toshiba
 2sc2714.pdf

2SC2714 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2714 High Frequency Amplifier Applications Unit mm FM, RF, MIX,IF Amplifier Applications Small reverse transfer capacitance Cre = 0.7 pF (typ.) Low noise figure NF = 2.5dB (typ.) (f = 100 MHz) Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage

 7.2. Size:704K  secos
 2sc2714.pdf

2SC2714 0.02A , 40V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES Small reverse Transfer Capacitance Cre=0.7pF(typ.) A L Low Noise Figure NF=2.5dB(typ.)(f=100MHz) 3 3 Top View C B CLASSIFICATION OF hFE 1 1 2 2 K E Product-Rank 2SC2714-R 2SC2714-O 2SC2

 7.3. Size:909K  jiangsu
 2sc2714.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC2714 TRANSISTOR (NPN) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Small reverse Transfer Capacitance Cre=0.7pF(typ.) Low Noise Figure NF=2.5dB(typ.) (f=100MHz) MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage

 7.4. Size:466K  htsemi
 2sc2714.pdf

2SC2714 TRANSISTOR (NPN) SOT-23 1. BASE FEATURES 2. EMITTER Small reverse Transfer Capacitance Cre=0.7pF(typ.) 3. COLLECTOR Low Noise Figure NF=2.5dB(typ.) (f=100MHz) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 4 V IC Collector Current -C

 7.5. Size:298K  lge
 2sc2714.pdf

2SC2714 SOT-23 Transistor(NPN) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features Small reverse Transfer Capacitance Cre=0.7pF(typ.) Low Noise Figure NF=2.5dB(typ.) (f=100MHz) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V Dimensions in inches and (millimeters) VEBO Emitter-

 7.6. Size:664K  wietron
 2sc2714.pdf

2SC2714 NPN General Purpose Transistors P b Lead(Pb)-Free SOT-23 ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO V Ic=10 A,IE=0 40 Collector-emitter breakdown voltage V(BR)CEO V Ic=1mA,IB=0 30 Emitter-base breakdown voltage V(BR)EBO IE=10 A,IC=0 4 V Collector cut-o

 7.7. Size:1075K  kexin
 2sc2714.pdf

SMD Type Transistors NPN Transistors 2SC2714 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=20mA 1 2 Collector Emitter Voltage VCEO=30V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Colle

 7.8. Size:604K  cn shikues
 2sc2714y.pdf

2SC2714Y MAXIMUM RATINGS Parameter Symbol Rating Unit GENERAL PURPOSE Collector-Emitter Voltage V 20 V TRANSISTOR NPN SILICON CEO 225mW 50mA 20V Collector-Base Voltage V 30 CBO V Emitter Base Voltage V 3.0 EBO V 3 Collector Current I 50 mA C 3 1 Total Device Dissipation(T =25 ) A P 225 mW tot 2 1 2 Thermal Resistance Junction to Ambient R 556 /W (th)ja

 7.9. Size:213K  cn hottech
 2sc2714.pdf

Plastic-Encapsulate Transistors FEATURES (NPN) 2SC2714 Small reverse Transfer Capacitance Cre=0.7pF(typ.) Low Noise Figure NF=2.5dB(typ.) (f=100MHz) MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 4 V IC Collector Current -Continuous 20 mA 1. BASE Collector