2SC2733 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC2733
Código: HC
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 30 V
Tensión emisor-base (Veb): 3 V
Corriente del colector DC máxima (Ic): 0.05 A
Temperatura operativa máxima (Tj): 125 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 1000 MHz
Capacitancia de salida (Cc): 0.8 pF
Ganancia de corriente contínua (hFE): 120
Encapsulados: TO236
Búsqueda de reemplazo de 2SC2733
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2SC2733 datasheet
8.1. Size:46K hitachi
2sc2735.pdf 
2SC2735 Silicon NPN Epitaxial Application UHF/VHF Local oscillator, frequency converter Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC2735 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3V Collector current IC 50 mA Collector power dissipation PC 15
8.2. Size:49K hitachi
2sc2734.pdf
2SC2734 Silicon NPN Epitaxial Application UHF frequency converter Local oscillator, wide band amplifier Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC2734 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 20 V Collector to emitter voltage VCEO 11 V Emitter to base voltage VEBO 3V Collector current IC 50 mA Collecto
8.3. Size:36K hitachi
2sc2732.pdf
2SC2732 Silicon NPN Epitaxial Application UHF frequency converter Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC2732 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 25 V Emitter to base voltage VEBO 4V Collector current IC 20 mA Collector power dissipation PC 150 mW Junction tempera
8.4. Size:55K hitachi
2sc2736.pdf
2SC2736 Silicon NPN Epitaxial Application UHF/VHF frequency converter Local oscillator Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC2736 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3V Collector current IC 50 mA Collector power dissipati
8.7. Size:793K kexin
2sc2735.pdf
SMD Type Transistors NPN Transistors 2SC2735 SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=20V +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect
8.8. Size:1034K kexin
2sc2734.pdf
SMD Type Transistors NPN Transistors 2SC2734 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=11V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Colle
8.9. Size:724K kexin
2sc2732.pdf
SMD Type Transistors NPN Transistors 2SC2732 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=20mA 1 2 Collector Emitter Voltage VCEO=25V +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect
8.10. Size:1028K kexin
2sc2736.pdf
SMD Type Transistors NPN Transistors 2SC2736 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=20V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Colle
8.11. Size:179K inchange semiconductor
2sc2735.pdf
INCHANGE Semiconductor isc Silicon NPN Transistor 2SC2735 DESCRIPTION Silicon NPN epitaxial type Local oscillator wide band amplifier 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in UHF/VHF frequency converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collec
8.12. Size:195K inchange semiconductor
2sc2738.pdf
isc Silicon NPN Power Transistor 2SC2738 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) High Speed Switching Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier, switching regulators, inverters, solenoid and relay drivers applications. ABSOLU
8.13. Size:214K inchange semiconductor
2sc2739.pdf
isc Silicon NPN Power Transistor 2SC2739 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) High Speed Switching Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier, switching regulators, inverters, solenoid and relay drivers applications. ABSOLU
8.14. Size:180K inchange semiconductor
2sc2734.pdf
INCHANGE Semiconductor isc Silicon NPN Transistor 2SC2734 DESCRIPTION Silicon NPN epitaxial type Local oscillator wide band amplifier 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in UHF frequency converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-
8.15. Size:180K inchange semiconductor
2sc2736.pdf
INCHANGE Semiconductor isc Silicon NPN Transistor 2SC2736 DESCRIPTION Silicon NPN epitaxial type Local oscillator wide band amplifier 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in UHF/VHF frequency converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collec
Otros transistores... 2SC2726, 2SC2727, 2SC2728, 2SC2729, 2SC273, 2SC2730, 2SC2731, 2SC2732, S8050, 2SC2734, 2SC2735, 2SC2736, 2SC2737, 2SC2738, 2SC2739, 2SC274, 2SC2740
