2SC2768 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC2768
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 40 W
Tensión colector-base (Vcb): 250 V
Corriente del colector DC máxima (Ic): 7 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta: TO220
Búsqueda de reemplazo de transistor bipolar 2SC2768
2SC2768 Datasheet (PDF)
2sc2768.pdf
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
2sc2768.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC2768 DESCRIPTION With TO-220C package High speed switching High reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum
2sc2768.pdf
isc Silicon NPN Power Transistor 2SC2768DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 200V(Min)CEO(SUS)High Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MA
2sc2767.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC2767 DESCRIPTION With TO-220C package High speed switching High reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum
2sc2761.pdf
isc Product Specificationisc Silicon NPN Power Transistor 2SC2761DESCRIPTIONExcellent Safe Operating AreaHigh voltage,high speed100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSConvertersInvertersSwitching regulatorsMotor controlsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL
2sc2769.pdf
isc Silicon NPN Power Transistor 2SC2769DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 200V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsDC-DC converterSolid state relayGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T
2sc2767.pdf
isc Silicon NPN Power Transistor 2SC2767DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 200V(Min)CEO(SUS)High Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MA
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2N3778
History: 2N3778
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050