2SC2785O Todos los transistores

Introduzca al menos 3 números o letras

2SC2785O . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC2785O

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.25 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 300 MHz

Capacitancia de salida (Cc): 2.5 pF

Ganancia de corriente contínua (hfe): 70

Empaquetado / Estuche: TO92

Búsqueda de reemplazo de transistor bipolar 2SC2785O

 

2SC2785O Datasheet (PDF)

3.1. 2sc2785.pdf Size:281K _nec

2SC2785O
2SC2785O

3.2. 2sc2785.pdf Size:494K _lge

2SC2785O
2SC2785O

2SC2785 TO-92S Transistor (NPN) 1. EMITTER TO-92S 2. COLLECTOR 3. BASE 1 2 3 Features High voltage VCEO:50V Excellent hFE Linearity:0.92 TYP hFE1 (0.1mA)/ hFE2 (1mA) Complementary to 2SA1175 PNP transistor MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Value Units Parameter VCBO 60 V Collector-Base Voltage VCEO Collector-Emitter Voltage 50 V VEBO Emit

4.1. 2sc2783.pdf Size:117K _toshiba

2SC2785O
2SC2785O

4.2. 2sc2782.pdf Size:137K _toshiba

2SC2785O
2SC2785O

2SC2782 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782 VHF BAND POWER AMPLIFIER APPLICATIONS Unit in mm Output Power : Po = 80W (Min.) (f = 175MHz, VCC = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 36 V Collector-Emitter Voltage VCEO 16 V Emitter-Base Voltage VEBO 4 V Collector Current IC 20 A Col

4.3. 2sc2787.pdf Size:228K _nec

2SC2785O
2SC2785O

4.4. 2sc2780.pdf Size:209K _nec

2SC2785O
2SC2785O

4.5. 2sc2784.pdf Size:185K _nec

2SC2785O
2SC2785O

4.6. 2sc2786.pdf Size:286K _nec

2SC2785O
2SC2785O

4.7. 2sc2788.pdf Size:145K _inchange_semiconductor

2SC2785O
2SC2785O

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2788 DESCRIPTION ·With TO-3PN package ·High breakdown voltage ·Fast switching speed ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitt

4.8. 2sc2780.pdf Size:1171K _kexin

2SC2785O
2SC2785O

SMD Type Transistors NPN Transistors 2SC2780 SOT-89 Unit:mm 1.70 0.1 ■ Features ● Collector Current Capability IC=50mA ● Collector Emitter Voltage VCEO=140V ● Complementary to 2SA1173 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 140 Collector - Emitter Voltage VCEO

Otros transistores... 2SC2780 , 2SC2781 , 2SC2782 , 2SC2783 , 2SC2784 , 2SC2785 , 2SC2785G , 2SC2785L , C945 , 2SC2785Y , 2SC2786 , 2SC2786O , 2SC2786R , 2SC2786Y , 2SC2787 , 2SC2787O , 2SC2787Y .

 


2SC2785O
  2SC2785O
  2SC2785O
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: M54561P | M54532P | M54532FP | M54531WP | M54531P | M54531FP | M54530P | M54530FP | M54522WP | LBCW65ALT1G | LBC858CWT1G | LBC848AWT1G | LBC847CPDW1T1G | LBC846ADW1T1G | LBC817-40DPMT1G | LBC817-40DMT1G | LBC817-25DMT1G | LBC817-16DPMT1G | LBC817-16DMT1G | LBC807-40DMT1G |


Introduzca al menos 1 números o letras