2SC2791 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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isc Silicon NPN Power Transistor 2SC2791DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min.)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed and high voltage switching applicationsSwitching regulator applicationsHigh speed DC-DC converter applicationsABSOLUTE MAX

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JMnic Product Specification Silicon NPN Power Transistors 2SC2792 DESCRIPTION With TO-3P(I) package High breakdown voltage Excellent switching times APPLICATIONS Switching regulator and high voltage Switching applications High speed DC-DC converter applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outli

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2794DESCRIPTIONHigh breakdown voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThe 2SC2794 is suitable for low power switchingregulator, DC-DC converter and high voltageswitch.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2793DESCRIPTION With MT-200 packageHigh power dissipationHigh current capability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operation.APPLICATIONSHigh speed and high voltage switching applicationsSwitching regulator applicationsHigh speed DC-DC con

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2792 DESCRIPTION With TO-3P(I) package High breakdown voltage Excellent switching times APPLICATIONS Switching regulator and high voltage Switching applications High speed DC-DC converter applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1