2SC2834 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc Silicon NPN Power Transistor 2SC2834DESCRIPTIONHigh Breakdown Voltage-: V = 800V(Min)(BR)CBOHigh Switching SpeedLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collect

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2834 2SC2834A DESCRIPTION With TO-3PN package High speed switching High VCBO Low collector saturation voltage APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3

Ordering number:EN733DNPN Epitaxial Planar Silicon Transistor2SC2839HF Amplifier ApplicationsFeatures Package Dimensions Very small package enabiling compactness andunit:mmslimness of sets.2033 High fT and small cre (fT=320MHz typ, cre=0.95pF[2SC2839]typ).B : BaseC : CollectorE : EmitterSANYO : SPASpecificationsAbsolute Maximum Ratings at Ta = 25CPara

JMnic Product Specification Silicon NPN Power Transistors 2SC2830 DESCRIPTION With TO-3 package High voltage ,high speed Wide area of safe operation APPLICATIONS For switching regulator applications PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER COND

JMnic Product Specification Silicon NPN Power Transistors 2SC2832 2SC2832A DESCRIPTION With TO-220 package Low collector saturation voltage High VCBO High speed switching APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER

LAPT 2SC2837Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1186)Application : Audio and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P)Symbol Ratings Unit Symbol Conditions RatingsUnit0.24.80.415.6VCBO 150 V ICBO VCB=150V 100max 0.1 A 9.6 2.0VCEO 150 V AIEBO VEB=5V 100

2SC2839 TO-92S Transistor (NPN)TO-92S1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 Features High fT and small Cre(fT=320MHZ typ, Cre=0.95pF typ). MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 5 V IC Collector Current Continuous 30 mA PC Colle

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2833 2SC2833A DESCRIPTION With TO-3PN package High speed switching High VCBO Low collector saturation voltage APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2831DESCRIPTIONLow Collector Saturation VoltageGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulators applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2832 2SC2832A DESCRIPTION With TO-220 package Low collector saturation voltage High VCBO High speed switching APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings (Ta=25)

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2831 2SC2831A DESCRIPTION With TO-220 package Low collector saturation voltage High VCBO High speed switching APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION1 Base 2 Collector;connected tomounting base 3 EmitterABSOLUTE MAXIMUM RATINGS(Ta=25) SYMB

isc Silicon NPN Power Transistor 2SC2830DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)Fast Switching SpeedCollector-Emitter Saturation Voltage-: V = 0.7V(Max.)@ I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage,high-speed,power switchingapplicat

isc Silicon NPN Power Transistor 2SC2833DESCRIPTIONHigh Breakdown Voltage-: V = 800V(Min)(BR)CBOHigh Switching SpeedLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collect

isc Silicon NPN Power Transistor 2SC2837DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V =150V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1186Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE

isc Silicon NPN Power Transistor 2SC2832DESCRIPTIONHigh Breakdown Voltage-: V = 800V(Min)(BR)CBOHigh Switching SpeedLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collect

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2838DESCRIPTION With MT-200 packageHigh power dissipationHigh current capability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operation.APPLICATIONSHigh speed and high voltage switching applicationsSwitching regulator applicationsHigh speed DC-DC con