2SC2841 Todos los transistores

 ..1. Size:198K  inchange semiconductor
 2sc2841.pdf

isc Silicon NPN Power Transistor 2SC2841 DESCRIPTION High Breakdown Voltage- V = 500V(Min) (BR)CBO High Switching Speed Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V C

 8.1. Size:183K  sanyo
 2sc2840.pdf

 8.2. Size:345K  kexin
 2sc2845.pdf

SMD Type Transistors NPN Transistors 2SC2845 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=70mA 1 2 Collector Emitter Voltage VCEO=12V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collec

 8.3. Size:63K  inchange semiconductor
 2sc2845.pdf

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC2845 DESCRIPTION Low Noise High Gain High Current-Gain Bandwidth Product APPLICATIONS Designed for use in UHF low noise amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base