2SC2847 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC2847

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 11 W

Tensión colector-base (Vcb): 35 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 860 MHz

Ganancia de corriente contínua (hFE): 80

Encapsulados: XM24

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2SC2847 datasheet

 8.1. Size:183K  sanyo
 2sc2840.pdf pdf_icon

2SC2847

 8.2. Size:345K  kexin
 2sc2845.pdf pdf_icon

2SC2847

SMD Type Transistors NPN Transistors 2SC2845 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=70mA 1 2 Collector Emitter Voltage VCEO=12V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collec

 8.3. Size:198K  inchange semiconductor
 2sc2841.pdf pdf_icon

2SC2847

isc Silicon NPN Power Transistor 2SC2841 DESCRIPTION High Breakdown Voltage- V = 500V(Min) (BR)CBO High Switching Speed Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V C

 8.4. Size:63K  inchange semiconductor
 2sc2845.pdf pdf_icon

2SC2847

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC2845 DESCRIPTION Low Noise High Gain High Current-Gain Bandwidth Product APPLICATIONS Designed for use in UHF low noise amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base

MOSTRAR MÁS

Otros transistores... 2SC2839E, 2SC2839F, 2SC283H, 2SC284, 2SC2840, 2SC2841, 2SC2844, 2SC2845, D667, 2SC284H, 2SC285, 2SC2850, 2SC2851, 2SC2852, 2SC2853, 2SC2854, 2SC2855