2SC285 Todos los transistores

 0.1. Size:192K  toshiba
 2sc2859.pdf

2SC2859 TOSHIBA Transistor Silicon NPN Epitaxial (PCT process) 2SC2859 Audio Frequency Low Power Amplifier Applications Unit mm Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA) Complementary to 2SA1182. Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-

 0.2. Size:80K  sanyo
 2sc2857.pdf

Ordering number EN753C NPN Triple Diffused Planar Silicon Transistor 2SC2857 High-Voltage Driver Applications Applications Package Dimensions Color TV vertical driver, sound driver applications. unit mm 2003A Features [2SC2857] High breakdown voltage (VCEO 180V) High collector dissipation (PC=500mW) JEDEC TO-92 B Base EIAJ SC-43 C Collector E Emitter SANYO

 0.3. Size:48K  panasonic
 2sc2851 e.pdf

Transistor 2SC2851 Silicon NPN epitaxial planer type For high-frequency power amplification Unit mm 5.9 0.2 4.9 0.2 Features High transition frequency fT. Output of 0.6W is obtained in the VHF band (f = 175MHz). 0.7 0.1 2.54 0.15 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 36 V Collector to emitter voltage VCEO 16 V +0

 0.4. Size:45K  hitachi
 2sc2855 2sc2856.pdf

2SC2855, 2SC2856 Silicon NPN Epitaxial Application Low frequency low noise amplifier Complementary pair with 2SA1190 and 2SA1191 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC2855, 2SC2856 Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SC2855 2SC2856 Unit Collector to base voltage VCBO 90 120 V Collector to emitter voltage VCEO 90 120 V Emitter to bas

 0.5. Size:24K  hitachi
 2sc2853 2sc2854.pdf

2SC2853, 2SC2854 Silicon NPN Epitaxial Application Low frequency amplifier Complementary pair with 2SA1188 and 2SA1189 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC2853, 2SC2854 Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SC2853 2SC2854 Unit Collector to base voltage VCBO 90 120 V Collector to emitter voltage VCEO 90 120 V Emitter to base voltage

 0.6. Size:102K  secos
 2sc2859.pdf

2SC2859 0.5A , 35V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES Excellent hFE Linearity A L Switching Applications 3 3 Top View C B 1 CLASSIFICATION OF hFE (1) 1 2 2 K E Product-Rank 2SC2859-O 2SC2859-Y 2SC2859-GR Range 70 140 120 240 200 400 D Mark

 0.7. Size:452K  htsemi
 2sc2859.pdf

2 SC2859 TRANSISTOR (NPN) SOT 23 FEATURES Excellent hFE Linearity Switching Applications 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR V Collector-Base Voltage 35 V CBO VCEO Collector-Emitter Voltage 30 V V Emitter-Base Voltage 5 V EBO I Collector Current 500 mA C P Collector Power Dissipat

 0.8. Size:893K  kexin
 2sc2859.pdf

SMD Type Transistors NPN Transistors 2SC2859 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Excellent hFE Linearity hFE(2)=25(min) (VCE=6V,IC=400mA) 1 2 +0.05 -0.1 0.1 -0.01 Complementary to 2SA1182 0.95+0.1 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 3