2SC29 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SC2996 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2996 FM/AM RF, MIX, Local, IF Unit: mm High Frequency Amplifier Applications High stability oscillation voltage on FM local oscillator Recommend FM/AM RF, MIX, local and IF Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 40 VCollector-emitter

2SC2982 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2982 Storobo Flash Applications Unit: mm Medium Power Amplifier Applications High DC current gain and excellent linearity : h = 140 to 600 (V = 1 V, I = 0.5 A) FE (1) CE C: h = 70 (min), 140 (typ.), (V = 1 V, I = 2 A) FE (2) CE C Low saturation voltage : V = 0.5 V (max) (I = 2 A, I = 50 mA)

2SC2995 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2995 FM/AM RF, MIX, OSC, IF Unit: mm High Frequency Amplifier Applications High stability oscillation voltage on FM local oscillator. Recommend FM/AM RF, MIX, OSC and IF. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 40 VCollector-emitter vo

2SC2983 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2983 Power Amplifier Applications Unit: mm Driver Stage Amplifier Applications High transition frequency: fT = 100 MHz (typ.) Complementary to 2SA1225 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 160 VCollector-emitter voltage VCEO 160 VEmitter-ba

Ordering number:ENN779DPNP/NPN Epitaxial Planar Silicon Transistors2SA1209/2SC2911160V/140mA High-Voltage Switchingand AF 100W Predriver ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm High breakdown voltage.2009B Good linearity of hFE and small Cob.[2SA1209/2SC2911] Fast switching speed.8.02.74.03.01.60.80.80.60.5

Ordering number:ENN778FPNP/NPN Epitaxial Planar Silicon Transistors2SA1207/2SC2909High-Voltage SwitchingAF 60W Predriver ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm High breakdown voltage.2003B Excellent linearity of hFE and small Cob.[2SA1207/2SC2909] Fast switching speed.5.04.04.00.450.50.440.451 2 31 : Emitter

Ordering number:ENN781GPNP/NPN Epitaxial Planar Silicon Transistors2SA1208/2SC2910High-Voltage SwitchingAudio 80W Output Predriver ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm High breakdown voltage.2006B Excellent linearity of hFE and small Cob.[2SA1208/2SC2910] Fast swtching speed.6.05.0 4.70.50.60.5 0.51 2 31 : Emi

Ordering number:EN931DNPN Epitaxial Planar Silicon Transistor2SC2999HF Amplifier ApplicationsFeatures Package Dimensions FBET series.unit:mm Very small-sized package permitting sets to be small-2033sized and slim.[2SC2999] High fT (fT=750MHz typ.) and small Cre(Cre=0.6pF typ).B : BaseC : CollectorE : EmitterSANYO : SPASpecificationsAbsolute Maximum R

Ordering number:EN829HPNP/NPN Epitaxial Planar Silicon Transistors2SA1481/2SC2960High-Speed Switching ApplicationsFeatures Package Dimensions Fast switching speed.unit:mm High breakdown voltage.2033[2SA1481/2SC2960]B : BaseC : Collector( ) : 2SA1481E : EmitterSpecificationsSANYO : SPAAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions Rating

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

DATA SHEETDATA SHEETSILICON TRANSISTOR2SC2954NPN SILICON EPITAXIAL TRANSISTORPOWER MINI MOLDDESCRIPTIONThe 2SC2954 is an NPN epitaxial silicon transistor disigned forPACKAGE DIMENSIONSlow noise wide band amplifier and buffer amplifier of OSC, for VHF(Unit: mm)and CATV bnad.4.50.1FEATURES1.50.11.60.2 Low Noise and High Gain.f = 200 MHz, 500 MHzNF: 2.3

DATA SHEETSILICON TRANSISTORS2SC2958, 2959NPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERSFEATURES PACKAGE DRAWING (UNIT: mm) Ideal for use of high voltage current such as TV verticaldeflection (drive and output), audio output, pin cushioncorrection Complementary transistor with 2SA1221 and 2SA1222VCEO = 140 V: 2SA1221/2SC2958VCEO = 160 V: 2SA1222/2

DATA SHEETSILICON TRANSISTORS2SC2885, 2946, 2946(1)NPN SILICON EPITAXIAL TRANSISTORFOR HIGH-VOLTAGE HIGH-SPEED SWITCHINGThe 2SC2885, 2946, and 2946(1) are high-voltage high-speed switching power transistors featuring a smallpackage (MP-3) which is suitable for high-density mounting. These transistors are ideal for drivers in DC/DCconverters and switching regulators.There are thr

2SC2983-OMCCTMMicro Commercial Components20736 Marilla Street ChatsworthMicro Commercial Components2SC2983-YCA 91311Phone: (818) 701-4933Fax: (818) 701-4939FeaturesNPN Low Collector Saturation VoltagePlastic-Encapsulate Execllent current-to-gain characteristics Epoxy meets UL 94 V-0 flammability ratingTransistors Moisture Sensitivity Level 1

2SC2983-OMCCTMMicro Commercial Components20736 Marilla Street ChatsworthMicro Commercial Components2SC2983-YCA 91311Phone: (818) 701-4933Fax: (818) 701-4939FeaturesNPN Low Collector Saturation VoltagePlastic-Encapsulate Execllent current-to-gain characteristics Epoxy meets UL 94 V-0 flammability ratingTransistors Moisture Sensitivity Level 1

Transistors2SC2925Silicon NPN epitaxial planar typeFor low-frequency output amplificationUnit: mm5.00.2 4.00.2 Features High forward current transfer ratio hFE Low collector-emitter saturation voltage VCE(sat)0.70.1 Absolute Maximum Ratings Ta = 25CParameter Symbol Rating Unit0.45+0.15 0.45+0.150.1 0.1Collector-base voltage (Emitter open) VC

Transistor2SC2925Silicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 60 V+0.2 +0.20.45 0.1 0.45 0.1Collector to emitter vo

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2SC2952NPN SILICON HIGH FREQUENCY TRANSISTORPACKAGE STYLE TO-39DESCRIPTION:The 2SC2592 is a High FrequencyTransistor Designed for GeneralPurpose VHF-UHF AmplifierApplications.MAXIMUM RATINGSIC 250 mAVCE 30 VPDISS 3.5 W @ TC = 25 OCTJ -65 to +200 OCTSTG -65 to +200 OC1 = Emitter 2 = Base3 & 4 = Collector (Case)50 OC/WJCCHARACTERISTICS TC = 25 OC

2SC2951 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The ASI 2SC2951 is a High PACKAGE STYLE .200 2L FLG Frequency Transistor Designed for General Purpose Oscillator Applications up to 10 GHz. FEATURES: POSC = 630 mW Typical at 7.5 GHz Omnigold Metallization System MAXIMUM RATINGS IC 440 mA VCE 16 V VCB 25 V PDISS 9.7

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SC2983 TRANSISTOR (NPN) TO-252-2L FEATURES 1. BASE High Transition Frequency 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage

LAPT 2SC2921Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1215) Application : Audio and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-200 Symbol Ratings Unit Symbol Conditions Ratings Unit0.26.00.336.4VCBO 160 V ICBO VCB=160V 100max A0.224.42.1VCEO 160 V VEB=5V 100max A 2-3.

LAPT 2SC2922Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1216)Application : Audio and General PurposeExternal Dimensions MT-200 Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Ratings Symbol Conditions Ratings UnitUnit0.26.00.336.4VCBO 180 ICBO VCB=180V 100max AV0.224.42.10.1VCEO 180 IEBO VEB=5V 100m

2SC2999 TO-92S Transistor (NPN)1. EMITTER TO-92S 2. COLLECTOR 3. BASE 1 2 3 Features High fT(fT=750MHZ typ) and small Cre (Cre=0.6pF typ) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 25 VVCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 3 V IC Collector Current -Continuous 30 mA PC Collector

Complementary NPN-PNP Power Bipolar Transistor R2SC2921(NPN) 2SA1215(PNP) APPLICATIONS High fidelity audio amplifier and other linear applications FEATURES V =160V (min) High collector voltageV =160V (min) CEO CEO NPN-PNP Complementary NPN-

SMD Type TransistorsNPN Transistors2SC2996SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=30V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Colle

SMD Type TransistorsNPN Transistors2SC2982 Features1.70 0.1 Low saturation voltage Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SA1314 0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Volta

isc Silicon NPN Power Transistor 2SC2938DESCRIPTIONHigh Collector-Emitter Sustaining Voltage: V = 800V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed and high powerapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Colle

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2970DESCRIPTIONWith TO-66 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for switching and wide-band amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 3

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2927 DESCRIPTION With TO-220 package High collector-emitter voltage : VCEO=300V High frequency:fT=40MHz(Min) APPLICATIONS For use in line-operated color TV chroma output circuits and sound output circuits. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2937 DESCRIPTION With TO-247 package Switching power transistor High breakdown voltage APPLICATIONS For switching regulator applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol 3 EmitterAbsolute maximum

isc Silicon NPN Power Transistor 2SC2944DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V(Min)(BR)CEOHigh Switching SpeedLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor and B/W TV power supplyActive power filterIndustrial use power supplyGeneral purpose power ampl

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2923 DESCRIPTION With TO-220F package High VCEO Low COBAPPLICATIONS For color TV chroma output applications PINNING PIN DESCRIPTION1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNITV

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2923 DESCRIPTION With TO-126 package High VCEO Low COBAPPLICATIONS For color TV chroma output applications PINNING see Fig.2 PIN DESCRIPTION1 Emitter 2 Collector 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNITV Collector-base voltage Open emitter 30

isc Silicon NPN Power Transistor 2SC2981DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)Collector-Emitter Saturation Voltage-: V = 1.0V(Max)@ I = 2ACE(sat) CFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage, high-speed and high powerswitching applic

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2939 DESCRIPTION With TO-247 package Switching power transistor High breakdown voltage APPLICATIONS For switching regulator applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol 3 EmitterAbsolute maximum

isc Silicon NPN Power Transistor 2SC2921DESCRIPTIONCollector-Emitter Breakdown Voltage-V = 160V(Min)(BR)CEOHigh Power DissipationComplement to Type 2SA1215Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Colle

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC2954DESCRIPTIONLow Noise and High GainNF = 2.3 dB TYP. ; S 2 = 20 dB TYP.21e@ f = 200 MHzNF = 2.4 dB TYP. ; S 2 = 12.5 dB TYP.21e@ f = 500 MHzMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low noise wide band amplifier and bufferamplifie

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2908 DESCRIPTION With TO-3PN package Low collector saturation voltage APPLICATIONS For use in power amplifier and switching circuits applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBO

isc Silicon NPN Power Transistor 2SC2911DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 160V(Min)(BR)CEOGood Linearity of hFEHigh Switching SpeedComplement to Type 2SA1209Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage switching and AF 100W predriverapplications.ABSOLUTE MAXIMUM R

isc Silicon NPN Power Transistor 2SC2914DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V (Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applicationsHigh speed DC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(T =25)a

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2923 DESCRIPTION With TO-202 package High VCEO Low COB APPLICATIONS For color TV chroma output applications PINNING(See Fig.2) PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-202) and symbol3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALU

isc Silicon NPN Power Transistor 2SC2920DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V (Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorMotor controlsUltrasonic oscillatorsDeflection circuitsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

isc Silicon NPN Power Transistor 2SC2979DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)Collector-Emitter Saturation Voltage-: V = 1.0V(Max)@ I = 0.75ACE(sat) CFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage, high-speed and high powerswitching app

isc Product Specificationisc Silicon NPN Power Transistor 2SC2902DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation VoltageComplement to Type MJ2955Minimum Lot-to-Lot variations for robust devicePerformance and reliable operation.APPLICATIONSDesigned for general-purpose switching and amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)a

isc Product Specificationisc Silicon NPN Power Transistor 2SC2965DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation VoltageMinimum Lot-to-Lot variations for robust devicePerformance and reliable operation.APPLICATIONSSwitching regulatorMotor controlsDeflections circuitsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV C

isc Silicon NPN Power Transistor 2SC2928DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 800V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed and high powerapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Coll

isc Silicon NPN Power Transistor 2SC2929DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXI

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2922DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = 180V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1216Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2934DESCRIPTIONHigh breakdown voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThe 2SC2934 is suitable for low power switchingregulator, DC-DC converter and high voltageswitch.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2943DESCRIPTIONLow Collector Saturation VoltageLow Collector-Emitter Breakdown VoltageGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in humidifier , DC/DC converter andgeneral purpose applications

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2975DESCRIPTIONWith TO-66 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for switching and wide-band amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 8

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2987 DESCRIPTION With TO-3PN package Complement to type 2SA1227 High power dissipation APPLICATIONS For audio frequency power amplifier applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbso

isc Silicon NPN Power Transistor 2SC2983DESCRIPTIONExcellent linearity of hFELow collector-to-emitter saturation voltageFast switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier and driver stage amplifierapplications .ABSOLUTE MAXIMUM RATINGS(T =25)a

isc Silicon NPN Power Transistor 2SC2913DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V (Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applicationsHigh speed DC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(T =25)a

isc Product Specificationisc Silicon NPN Power Transistor 2SC2964DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation VoltageMinimum Lot-to-Lot variations for robust devicePerformance and reliable operation.APPLICATIONSSwitching regulatorMotor controlsDeflections circuitsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV C