2SC2921 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

LAPT 2SC2921 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1215) Application Audio and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-200 Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 6.0 0.3 36.4 VCBO 160 V ICBO VCB=160V 100max A 0.2 24.4 2.1 VCEO 160 V VEB=5V 100max A 2- 3.

Complementary NPN-PNP Power Bipolar Transistor R 2SC2921(NPN) 2SA1215(PNP) APPLICATIONS High fidelity audio amplifier and other linear applications FEATURES V =160V (min) High collector voltage V =160V (min) CEO CEO NPN-PNP Complementary NPN-

isc Silicon NPN Power Transistor 2SC2921 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 160V(Min) (BR)CEO High Power Dissipation Complement to Type 2SA1215 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Colle

Transistors 2SC2925 Silicon NPN epitaxial planar type For low-frequency output amplification Unit mm 5.0 0.2 4.0 0.2 Features High forward current transfer ratio hFE Low collector-emitter saturation voltage VCE(sat) 0.7 0.1 Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit 0.45+0.15 0.45+0.15 0.1 0.1 Collector-base voltage (Emitter open) VC

Transistor 2SC2925 Silicon NPN epitaxial planer type For low-frequency output amplification Unit mm 5.0 0.2 4.0 0.2 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 60 V +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to emitter vo

LAPT 2SC2922 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1216) Application Audio and General Purpose External Dimensions MT-200 Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Ratings Symbol Conditions Ratings Unit Unit 0.2 6.0 0.3 36.4 VCBO 180 ICBO VCB=180V 100max A V 0.2 24.4 2.1 0.1 VCEO 180 IEBO VEB=5V 100m

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2927 DESCRIPTION With TO-220 package High collector-emitter voltage VCEO=300V High frequency fT=40MHz(Min) APPLICATIONS For use in line-operated color TV chroma output circuits and sound output circuits. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2923 DESCRIPTION With TO-220F package High VCEO Low COB APPLICATIONS For color TV chroma output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT V

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2923 DESCRIPTION With TO-126 package High VCEO Low COB APPLICATIONS For color TV chroma output applications PINNING see Fig.2 PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT V Collector-base voltage Open emitter 30

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2923 DESCRIPTION With TO-202 package High VCEO Low COB APPLICATIONS For color TV chroma output applications PINNING(See Fig.2) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-202) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALU

isc Silicon NPN Power Transistor 2SC2920 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V (Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator Motor controls Ultrasonic oscillators Deflection circuits ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER

isc Silicon NPN Power Transistor 2SC2928 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 800V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed and high power applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Coll

isc Silicon NPN Power Transistor 2SC2929 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE MAXI

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2922 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 180V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1216 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 )