2SC2946 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC2946
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 15 W
Tensión colector-base (Vcb): 330 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 3 pF
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta: TO218
Búsqueda de reemplazo de transistor bipolar 2SC2946
2SC2946 Datasheet (PDF)
2sc2885 2sc2946.pdf
DATA SHEETSILICON TRANSISTORS2SC2885, 2946, 2946(1)NPN SILICON EPITAXIAL TRANSISTORFOR HIGH-VOLTAGE HIGH-SPEED SWITCHINGThe 2SC2885, 2946, and 2946(1) are high-voltage high-speed switching power transistors featuring a smallpackage (MP-3) which is suitable for high-density mounting. These transistors are ideal for drivers in DC/DCconverters and switching regulators.There are thr
2sc2944.pdf
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
2sc2944.pdf
isc Silicon NPN Power Transistor 2SC2944DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V(Min)(BR)CEOHigh Switching SpeedLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor and B/W TV power supplyActive power filterIndustrial use power supplyGeneral purpose power ampl
2sc2943.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2943DESCRIPTIONLow Collector Saturation VoltageLow Collector-Emitter Breakdown VoltageGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in humidifier , DC/DC converter andgeneral purpose applications
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
Liste
Recientemente añadidas las descripciónes de los transistores:
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