2SC295 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DATA SHEETDATA SHEETSILICON TRANSISTOR2SC2954NPN SILICON EPITAXIAL TRANSISTORPOWER MINI MOLDDESCRIPTIONThe 2SC2954 is an NPN epitaxial silicon transistor disigned forPACKAGE DIMENSIONSlow noise wide band amplifier and buffer amplifier of OSC, for VHF(Unit: mm)and CATV bnad.4.50.1FEATURES1.50.11.60.2 Low Noise and High Gain.f = 200 MHz, 500 MHzNF: 2.3

DATA SHEETSILICON TRANSISTORS2SC2958, 2959NPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERSFEATURES PACKAGE DRAWING (UNIT: mm) Ideal for use of high voltage current such as TV verticaldeflection (drive and output), audio output, pin cushioncorrection Complementary transistor with 2SA1221 and 2SA1222VCEO = 140 V: 2SA1221/2SC2958VCEO = 160 V: 2SA1222/2

2SC2952NPN SILICON HIGH FREQUENCY TRANSISTORPACKAGE STYLE TO-39DESCRIPTION:The 2SC2592 is a High FrequencyTransistor Designed for GeneralPurpose VHF-UHF AmplifierApplications.MAXIMUM RATINGSIC 250 mAVCE 30 VPDISS 3.5 W @ TC = 25 OCTJ -65 to +200 OCTSTG -65 to +200 OC1 = Emitter 2 = Base3 & 4 = Collector (Case)50 OC/WJCCHARACTERISTICS TC = 25 OC

2SC2951 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The ASI 2SC2951 is a High PACKAGE STYLE .200 2L FLG Frequency Transistor Designed for General Purpose Oscillator Applications up to 10 GHz. FEATURES: POSC = 630 mW Typical at 7.5 GHz Omnigold Metallization System MAXIMUM RATINGS IC 440 mA VCE 16 V VCB 25 V PDISS 9.7

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC2954DESCRIPTIONLow Noise and High GainNF = 2.3 dB TYP. ; S 2 = 20 dB TYP.21e@ f = 200 MHzNF = 2.4 dB TYP. ; S 2 = 12.5 dB TYP.21e@ f = 500 MHzMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low noise wide band amplifier and bufferamplifie