2SC2957 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC2954 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION The 2SC2954 is an NPN epitaxial silicon transistor disigned for PACKAGE DIMENSIONS low noise wide band amplifier and buffer amplifier of OSC, for VHF (Unit mm) and CATV bnad. 4.5 0.1 FEATURES 1.5 0.1 1.6 0.2 Low Noise and High Gain. f = 200 MHz, 500 MHz NF 2.3

DATA SHEET SILICON TRANSISTORS 2SC2958, 2959 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS FEATURES PACKAGE DRAWING (UNIT mm) Ideal for use of high voltage current such as TV vertical deflection (drive and output), audio output, pin cushion correction Complementary transistor with 2SA1221 and 2SA1222 VCEO = 140 V 2SA1221/2SC2958 VCEO = 160 V 2SA1222/2

2SC2952 NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 DESCRIPTION The 2SC2592 is a High Frequency Transistor Designed for General Purpose VHF-UHF Amplifier Applications. MAXIMUM RATINGS IC 250 mA VCE 30 V PDISS 3.5 W @ TC = 25 OC TJ -65 to +200 OC TSTG -65 to +200 OC 1 = Emitter 2 = Base 3 & 4 = Collector (Case) 50 OC/W JC CHARACTERISTICS TC = 25 OC

2SC2951 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION The ASI 2SC2951 is a High PACKAGE STYLE .200 2L FLG Frequency Transistor Designed for General Purpose Oscillator Applications up to 10 GHz. FEATURES POSC = 630 mW Typical at 7.5 GHz Omnigold Metallization System MAXIMUM RATINGS IC 440 mA VCE 16 V VCB 25 V PDISS 9.7

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2954 DESCRIPTION Low Noise and High Gain NF = 2.3 dB TYP. ; S 2 = 20 dB TYP. 21e @ f = 200 MHz NF = 2.4 dB TYP. ; S 2 = 12.5 dB TYP. 21e @ f = 500 MHz Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low noise wide band amplifier and buffer amplifie