2SC2964 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc Product Specification isc Silicon NPN Power Transistor 2SC2964 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage Minimum Lot-to-Lot variations for robust device Performance and reliable operation. APPLICATIONS Switching regulator Motor controls Deflections circuits ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V C

Ordering number EN829H PNP/NPN Epitaxial Planar Silicon Transistors 2SA1481/2SC2960 High-Speed Switching Applications Features Package Dimensions Fast switching speed. unit mm High breakdown voltage. 2033 [2SA1481/2SC2960] B Base C Collector ( ) 2SA1481 E Emitter Specifications SANYO SPA Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Rating

isc Product Specification isc Silicon NPN Power Transistor 2SC2965 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage Minimum Lot-to-Lot variations for robust device Performance and reliable operation. APPLICATIONS Switching regulator Motor controls Deflections circuits ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V C

2SC2996 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2996 FM/AM RF, MIX, Local, IF Unit mm High Frequency Amplifier Applications High stability oscillation voltage on FM local oscillator Recommend FM/AM RF, MIX, local and IF Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter

2SC2982 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2982 Storobo Flash Applications Unit mm Medium Power Amplifier Applications High DC current gain and excellent linearity h = 140 to 600 (V = 1 V, I = 0.5 A) FE (1) CE C h = 70 (min), 140 (typ.), (V = 1 V, I = 2 A) FE (2) CE C Low saturation voltage V = 0.5 V (max) (I = 2 A, I = 50 mA)

2SC2995 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2995 FM/AM RF, MIX, OSC, IF Unit mm High Frequency Amplifier Applications High stability oscillation voltage on FM local oscillator. Recommend FM/AM RF, MIX, OSC and IF. Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter vo

2SC2983 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2983 Power Amplifier Applications Unit mm Driver Stage Amplifier Applications High transition frequency fT = 100 MHz (typ.) Complementary to 2SA1225 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 160 V Collector-emitter voltage VCEO 160 V Emitter-ba

Ordering number ENN779D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1209/2SC2911 160V/140mA High-Voltage Switching and AF 100W Predriver Applications Features Package Dimensions Adoption of FBET process. unit mm High breakdown voltage. 2009B Good linearity of hFE and small Cob. [2SA1209/2SC2911] Fast switching speed. 8.0 2.7 4.0 3.0 1.6 0.8 0.8 0.6 0.5

Ordering number ENN778F PNP/NPN Epitaxial Planar Silicon Transistors 2SA1207/2SC2909 High-Voltage Switching AF 60W Predriver Applications Features Package Dimensions Adoption of FBET process. unit mm High breakdown voltage. 2003B Excellent linearity of hFE and small Cob. [2SA1207/2SC2909] Fast switching speed. 5.0 4.0 4.0 0.45 0.5 0.44 0.45 1 2 3 1 Emitter

Ordering number ENN781G PNP/NPN Epitaxial Planar Silicon Transistors 2SA1208/2SC2910 High-Voltage Switching Audio 80W Output Predriver Applications Features Package Dimensions Adoption of FBET process. unit mm High breakdown voltage. 2006B Excellent linearity of hFE and small Cob. [2SA1208/2SC2910] Fast swtching speed. 6.0 5.0 4.7 0.5 0.6 0.5 0.5 1 2 3 1 Emi

Ordering number EN931D NPN Epitaxial Planar Silicon Transistor 2SC2999 HF Amplifier Applications Features Package Dimensions FBET series. unit mm Very small-sized package permitting sets to be small- 2033 sized and slim. [2SC2999] High fT (fT=750MHz typ.) and small Cre (Cre=0.6pF typ). B Base C Collector E Emitter SANYO SPA Specifications Absolute Maximum R

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC2954 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION The 2SC2954 is an NPN epitaxial silicon transistor disigned for PACKAGE DIMENSIONS low noise wide band amplifier and buffer amplifier of OSC, for VHF (Unit mm) and CATV bnad. 4.5 0.1 FEATURES 1.5 0.1 1.6 0.2 Low Noise and High Gain. f = 200 MHz, 500 MHz NF 2.3

DATA SHEET SILICON TRANSISTORS 2SC2958, 2959 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS FEATURES PACKAGE DRAWING (UNIT mm) Ideal for use of high voltage current such as TV vertical deflection (drive and output), audio output, pin cushion correction Complementary transistor with 2SA1221 and 2SA1222 VCEO = 140 V 2SA1221/2SC2958 VCEO = 160 V 2SA1222/2

DATA SHEET SILICON TRANSISTORS 2SC2885, 2946, 2946(1) NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING The 2SC2885, 2946, and 2946(1) are high-voltage high-speed switching power transistors featuring a small package (MP-3) which is suitable for high-density mounting. These transistors are ideal for drivers in DC/DC converters and switching regulators. There are thr

Transistors 2SC2925 Silicon NPN epitaxial planar type For low-frequency output amplification Unit mm 5.0 0.2 4.0 0.2 Features High forward current transfer ratio hFE Low collector-emitter saturation voltage VCE(sat) 0.7 0.1 Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit 0.45+0.15 0.45+0.15 0.1 0.1 Collector-base voltage (Emitter open) VC

Transistor 2SC2925 Silicon NPN epitaxial planer type For low-frequency output amplification Unit mm 5.0 0.2 4.0 0.2 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 60 V +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to emitter vo

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

A A A

A A A

2SC2952 NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 DESCRIPTION The 2SC2592 is a High Frequency Transistor Designed for General Purpose VHF-UHF Amplifier Applications. MAXIMUM RATINGS IC 250 mA VCE 30 V PDISS 3.5 W @ TC = 25 OC TJ -65 to +200 OC TSTG -65 to +200 OC 1 = Emitter 2 = Base 3 & 4 = Collector (Case) 50 OC/W JC CHARACTERISTICS TC = 25 OC

2SC2951 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION The ASI 2SC2951 is a High PACKAGE STYLE .200 2L FLG Frequency Transistor Designed for General Purpose Oscillator Applications up to 10 GHz. FEATURES POSC = 630 mW Typical at 7.5 GHz Omnigold Metallization System MAXIMUM RATINGS IC 440 mA VCE 16 V VCB 25 V PDISS 9.7

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SC2983 TRANSISTOR (NPN) TO-252-2L FEATURES 1. BASE High Transition Frequency 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage

LAPT 2SC2921 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1215) Application Audio and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-200 Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 6.0 0.3 36.4 VCBO 160 V ICBO VCB=160V 100max A 0.2 24.4 2.1 VCEO 160 V VEB=5V 100max A 2- 3.

LAPT 2SC2922 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1216) Application Audio and General Purpose External Dimensions MT-200 Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Ratings Symbol Conditions Ratings Unit Unit 0.2 6.0 0.3 36.4 VCBO 180 ICBO VCB=180V 100max A V 0.2 24.4 2.1 0.1 VCEO 180 IEBO VEB=5V 100m

2SC2999 TO-92S Transistor (NPN) 1. EMITTER TO-92S 2. COLLECTOR 3. BASE 1 2 3 Features High fT(fT=750MHZ typ) and small Cre (Cre=0.6pF typ) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 3 V IC Collector Current -Continuous 30 mA PC Collector

Complementary NPN-PNP Power Bipolar Transistor R 2SC2921(NPN) 2SA1215(PNP) APPLICATIONS High fidelity audio amplifier and other linear applications FEATURES V =160V (min) High collector voltage V =160V (min) CEO CEO NPN-PNP Complementary NPN-

SMD Type Transistors NPN Transistors 2SC2996 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=30V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Colle

SMD Type Transistors NPN Transistors 2SC2982 Features 1.70 0.1 Low saturation voltage Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SA1314 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Volta

isc Silicon NPN Power Transistor 2SC2938 DESCRIPTION High Collector-Emitter Sustaining Voltage V = 800V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed and high power applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Colle

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2970 DESCRIPTION With TO-66 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for switching and wide-band amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 3

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2927 DESCRIPTION With TO-220 package High collector-emitter voltage VCEO=300V High frequency fT=40MHz(Min) APPLICATIONS For use in line-operated color TV chroma output circuits and sound output circuits. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2937 DESCRIPTION With TO-247 package Switching power transistor High breakdown voltage APPLICATIONS For switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol 3 Emitter Absolute maximum

isc Silicon NPN Power Transistor 2SC2944 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO High Switching Speed Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color and B/W TV power supply Active power filter Industrial use power supply General purpose power ampl

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2923 DESCRIPTION With TO-220F package High VCEO Low COB APPLICATIONS For color TV chroma output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT V

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2923 DESCRIPTION With TO-126 package High VCEO Low COB APPLICATIONS For color TV chroma output applications PINNING see Fig.2 PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT V Collector-base voltage Open emitter 30

isc Silicon NPN Power Transistor 2SC2981 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) Collector-Emitter Saturation Voltage- V = 1.0V(Max)@ I = 2A CE(sat) C Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage, high-speed and high power switching applic

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2939 DESCRIPTION With TO-247 package Switching power transistor High breakdown voltage APPLICATIONS For switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol 3 Emitter Absolute maximum

isc Silicon NPN Power Transistor 2SC2921 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 160V(Min) (BR)CEO High Power Dissipation Complement to Type 2SA1215 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Colle

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2954 DESCRIPTION Low Noise and High Gain NF = 2.3 dB TYP. ; S 2 = 20 dB TYP. 21e @ f = 200 MHz NF = 2.4 dB TYP. ; S 2 = 12.5 dB TYP. 21e @ f = 500 MHz Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low noise wide band amplifier and buffer amplifie

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2908 DESCRIPTION With TO-3PN package Low collector saturation voltage APPLICATIONS For use in power amplifier and switching circuits applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBO

isc Silicon NPN Power Transistor 2SC2911 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 160V(Min) (BR)CEO Good Linearity of h FE High Switching Speed Complement to Type 2SA1209 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage switching and AF 100W predriver applications. ABSOLUTE MAXIMUM R

isc Silicon NPN Power Transistor 2SC2914 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V (Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2923 DESCRIPTION With TO-202 package High VCEO Low COB APPLICATIONS For color TV chroma output applications PINNING(See Fig.2) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-202) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALU

isc Silicon NPN Power Transistor 2SC2920 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V (Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator Motor controls Ultrasonic oscillators Deflection circuits ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER

isc Silicon NPN Power Transistor 2SC2979 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) Collector-Emitter Saturation Voltage- V = 1.0V(Max)@ I = 0.75A CE(sat) C Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage, high-speed and high power switching app

isc Product Specification isc Silicon NPN Power Transistor 2SC2902 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage Complement to Type MJ2955 Minimum Lot-to-Lot variations for robust device Performance and reliable operation. APPLICATIONS Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a

isc Silicon NPN Power Transistor 2SC2928 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 800V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed and high power applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Coll

isc Silicon NPN Power Transistor 2SC2929 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE MAXI

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2922 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 180V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1216 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 )

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2934 DESCRIPTION High breakdown voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS The 2SC2934 is suitable for low power switching regulator, DC-DC converter and high voltage switch. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2943 DESCRIPTION Low Collector Saturation Voltage Low Collector-Emitter Breakdown Voltage Good Linearity of h FE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in humidifier , DC/DC converter and general purpose applications

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2975 DESCRIPTION With TO-66 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for switching and wide-band amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 8

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2987 DESCRIPTION With TO-3PN package Complement to type 2SA1227 High power dissipation APPLICATIONS For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Abso

isc Silicon NPN Power Transistor 2SC2983 DESCRIPTION Excellent linearity of h FE Low collector-to-emitter saturation voltage Fast switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and driver stage amplifier applications . ABSOLUTE MAXIMUM RATINGS(T =25 ) a

isc Silicon NPN Power Transistor 2SC2913 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V (Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a