2SC2965 Datasheet. Equivalente

 ..1. Size:177K  inchange semiconductor
 2sc2965.pdf

isc Product Specification isc Silicon NPN Power Transistor 2SC2965 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage Minimum Lot-to-Lot variations for robust device Performance and reliable operation. APPLICATIONS Switching regulator Motor controls Deflections circuits ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V C

 8.1. Size:223K  sanyo
 2sa1481 2sc2960.pdf

Ordering number EN829H PNP/NPN Epitaxial Planar Silicon Transistors 2SA1481/2SC2960 High-Speed Switching Applications Features Package Dimensions Fast switching speed. unit mm High breakdown voltage. 2033 [2SA1481/2SC2960] B Base C Collector ( ) 2SA1481 E Emitter Specifications SANYO SPA Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Rating

 8.2. Size:178K  inchange semiconductor
 2sc2964.pdf

isc Product Specification isc Silicon NPN Power Transistor 2SC2964 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage Minimum Lot-to-Lot variations for robust device Performance and reliable operation. APPLICATIONS Switching regulator Motor controls Deflections circuits ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V C

 9.1. Size:361K  1
 2sc2937 2sc3224 2sc3262 2sc3261 2sc3259 2sc2507 2sc2506 2sc2829 2sc2827 2sc2826.pdf

 9.2. Size:507K  toshiba
 2sc2996.pdf

2SC2996 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2996 FM/AM RF, MIX, Local, IF Unit mm High Frequency Amplifier Applications High stability oscillation voltage on FM local oscillator Recommend FM/AM RF, MIX, local and IF Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter

 9.3. Size:147K  toshiba
 2sc2982.pdf

2SC2982 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2982 Storobo Flash Applications Unit mm Medium Power Amplifier Applications High DC current gain and excellent linearity h = 140 to 600 (V = 1 V, I = 0.5 A) FE (1) CE C h = 70 (min), 140 (typ.), (V = 1 V, I = 2 A) FE (2) CE C Low saturation voltage V = 0.5 V (max) (I = 2 A, I = 50 mA)

 9.4. Size:510K  toshiba
 2sc2995.pdf

2SC2995 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2995 FM/AM RF, MIX, OSC, IF Unit mm High Frequency Amplifier Applications High stability oscillation voltage on FM local oscillator. Recommend FM/AM RF, MIX, OSC and IF. Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter vo

 9.5. Size:128K  toshiba
 2sc2983.pdf

2SC2983 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2983 Power Amplifier Applications Unit mm Driver Stage Amplifier Applications High transition frequency fT = 100 MHz (typ.) Complementary to 2SA1225 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 160 V Collector-emitter voltage VCEO 160 V Emitter-ba

 9.6. Size:43K  sanyo
 2sa1209 2sc2911 2sc2911.pdf

Ordering number ENN779D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1209/2SC2911 160V/140mA High-Voltage Switching and AF 100W Predriver Applications Features Package Dimensions Adoption of FBET process. unit mm High breakdown voltage. 2009B Good linearity of hFE and small Cob. [2SA1209/2SC2911] Fast switching speed. 8.0 2.7 4.0 3.0 1.6 0.8 0.8 0.6 0.5

 9.7. Size:45K  sanyo
 2sa1207 2sc2909 2sc2909.pdf

Ordering number ENN778F PNP/NPN Epitaxial Planar Silicon Transistors 2SA1207/2SC2909 High-Voltage Switching AF 60W Predriver Applications Features Package Dimensions Adoption of FBET process. unit mm High breakdown voltage. 2003B Excellent linearity of hFE and small Cob. [2SA1207/2SC2909] Fast switching speed. 5.0 4.0 4.0 0.45 0.5 0.44 0.45 1 2 3 1 Emitter

 9.8. Size:44K  sanyo
 2sa1208 2sc2910 2sc2910.pdf

Ordering number ENN781G PNP/NPN Epitaxial Planar Silicon Transistors 2SA1208/2SC2910 High-Voltage Switching Audio 80W Output Predriver Applications Features Package Dimensions Adoption of FBET process. unit mm High breakdown voltage. 2006B Excellent linearity of hFE and small Cob. [2SA1208/2SC2910] Fast swtching speed. 6.0 5.0 4.7 0.5 0.6 0.5 0.5 1 2 3 1 Emi

 9.9. Size:189K  sanyo
 2sc2999.pdf

Ordering number EN931D NPN Epitaxial Planar Silicon Transistor 2SC2999 HF Amplifier Applications Features Package Dimensions FBET series. unit mm Very small-sized package permitting sets to be small- 2033 sized and slim. [2SC2999] High fT (fT=750MHz typ.) and small Cre (Cre=0.6pF typ). B Base C Collector E Emitter SANYO SPA Specifications Absolute Maximum R

 9.10. Size:49K  renesas
 2sc2979.pdf

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

 9.11. Size:156K  nec
 2sc2901.pdf

 9.12. Size:231K  nec
 2sc2946.pdf

 9.13. Size:103K  nec
 2sc2954.pdf

DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC2954 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION The 2SC2954 is an NPN epitaxial silicon transistor disigned for PACKAGE DIMENSIONS low noise wide band amplifier and buffer amplifier of OSC, for VHF (Unit mm) and CATV bnad. 4.5 0.1 FEATURES 1.5 0.1 1.6 0.2 Low Noise and High Gain. f = 200 MHz, 500 MHz NF 2.3

 9.14. Size:80K  nec
 2sc2958 2sc2959.pdf

DATA SHEET SILICON TRANSISTORS 2SC2958, 2959 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS FEATURES PACKAGE DRAWING (UNIT mm) Ideal for use of high voltage current such as TV vertical deflection (drive and output), audio output, pin cushion correction Complementary transistor with 2SA1221 and 2SA1222 VCEO = 140 V 2SA1221/2SC2958 VCEO = 160 V 2SA1222/2

 9.15. Size:128K  nec
 2sc2885 2sc2946.pdf

DATA SHEET SILICON TRANSISTORS 2SC2885, 2946, 2946(1) NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING The 2SC2885, 2946, and 2946(1) are high-voltage high-speed switching power transistors featuring a small package (MP-3) which is suitable for high-density mounting. These transistors are ideal for drivers in DC/DC converters and switching regulators. There are thr

 9.16. Size:566K  mcc
 2sc2983-o.pdf

 9.17. Size:566K  mcc
 2sc2983-y.pdf

 9.18. Size:77K  panasonic
 2sc2925.pdf

Transistors 2SC2925 Silicon NPN epitaxial planar type For low-frequency output amplification Unit mm 5.0 0.2 4.0 0.2 Features High forward current transfer ratio hFE Low collector-emitter saturation voltage VCE(sat) 0.7 0.1 Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit 0.45+0.15 0.45+0.15 0.1 0.1 Collector-base voltage (Emitter open) VC

 9.19. Size:40K  panasonic
 2sc2925 e.pdf

Transistor 2SC2925 Silicon NPN epitaxial planer type For low-frequency output amplification Unit mm 5.0 0.2 4.0 0.2 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 60 V +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to emitter vo

 9.20. Size:110K  fuji
 2sc2944.pdf

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

 9.21. Size:42K  hitachi
 2sc2928.pdf

 9.22. Size:120K  mospec
 2sc2938.pdf

A A A

 9.23. Size:120K  mospec
 2sc2908.pdf

A A A

 9.24. Size:30K  no
 2sa1227 2sa1227a 2sc2987a.pdf

 9.25. Size:105K  no
 2sc2929.pdf

 9.26. Size:28K  advanced-semi
 2sc2952.pdf

2SC2952 NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 DESCRIPTION The 2SC2592 is a High Frequency Transistor Designed for General Purpose VHF-UHF Amplifier Applications. MAXIMUM RATINGS IC 250 mA VCE 30 V PDISS 3.5 W @ TC = 25 OC TJ -65 to +200 OC TSTG -65 to +200 OC 1 = Emitter 2 = Base 3 & 4 = Collector (Case) 50 OC/W JC CHARACTERISTICS TC = 25 OC

 9.27. Size:21K  advanced-semi
 2sc2951.pdf

2SC2951 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION The ASI 2SC2951 is a High PACKAGE STYLE .200 2L FLG Frequency Transistor Designed for General Purpose Oscillator Applications up to 10 GHz. FEATURES POSC = 630 mW Typical at 7.5 GHz Omnigold Metallization System MAXIMUM RATINGS IC 440 mA VCE 16 V VCB 25 V PDISS 9.7

 9.28. Size:872K  jiangsu
 2sc2983.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SC2983 TRANSISTOR (NPN) TO-252-2L FEATURES 1. BASE High Transition Frequency 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage

 9.29. Size:27K  sanken-ele
 2sc2921.pdf

LAPT 2SC2921 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1215) Application Audio and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-200 Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 6.0 0.3 36.4 VCBO 160 V ICBO VCB=160V 100max A 0.2 24.4 2.1 VCEO 160 V VEB=5V 100max A 2- 3.

 9.30. Size:28K  sanken-ele
 2sc2922.pdf

LAPT 2SC2922 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1216) Application Audio and General Purpose External Dimensions MT-200 Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Ratings Symbol Conditions Ratings Unit Unit 0.2 6.0 0.3 36.4 VCBO 180 ICBO VCB=180V 100max A V 0.2 24.4 2.1 0.1 VCEO 180 IEBO VEB=5V 100m

 9.31. Size:341K  lge
 2sc2999.pdf

2SC2999 TO-92S Transistor (NPN) 1. EMITTER TO-92S 2. COLLECTOR 3. BASE 1 2 3 Features High fT(fT=750MHZ typ) and small Cre (Cre=0.6pF typ) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 3 V IC Collector Current -Continuous 30 mA PC Collector

 9.32. Size:913K  jilin sino
 2sa1215 2sc2921.pdf

Complementary NPN-PNP Power Bipolar Transistor R 2SC2921(NPN) 2SA1215(PNP) APPLICATIONS High fidelity audio amplifier and other linear applications FEATURES V =160V (min) High collector voltage V =160V (min) CEO CEO NPN-PNP Complementary NPN-

 9.33. Size:1700K  kexin
 2sc2996.pdf

SMD Type Transistors NPN Transistors 2SC2996 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=30V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Colle

 9.34. Size:944K  kexin
 2sc2982.pdf

SMD Type Transistors NPN Transistors 2SC2982 Features 1.70 0.1 Low saturation voltage Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SA1314 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Volta

 9.35. Size:370K  inchange semiconductor
 2sc2938.pdf

isc Silicon NPN Power Transistor 2SC2938 DESCRIPTION High Collector-Emitter Sustaining Voltage V = 800V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed and high power applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Colle

 9.36. Size:179K  inchange semiconductor
 2sc2970.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2970 DESCRIPTION With TO-66 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for switching and wide-band amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 3

 9.37. Size:56K  inchange semiconductor
 2sc2927.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2927 DESCRIPTION With TO-220 package High collector-emitter voltage VCEO=300V High frequency fT=40MHz(Min) APPLICATIONS For use in line-operated color TV chroma output circuits and sound output circuits. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.

 9.38. Size:74K  inchange semiconductor
 2sc2937.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2937 DESCRIPTION With TO-247 package Switching power transistor High breakdown voltage APPLICATIONS For switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol 3 Emitter Absolute maximum

 9.39. Size:218K  inchange semiconductor
 2sc2944.pdf

isc Silicon NPN Power Transistor 2SC2944 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO High Switching Speed Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color and B/W TV power supply Active power filter Industrial use power supply General purpose power ampl

 9.40. Size:186K  inchange semiconductor
 2sc2923-220f.pdf

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2923 DESCRIPTION With TO-220F package High VCEO Low COB APPLICATIONS For color TV chroma output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT V

 9.41. Size:93K  inchange semiconductor
 2sc2923-126.pdf

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2923 DESCRIPTION With TO-126 package High VCEO Low COB APPLICATIONS For color TV chroma output applications PINNING see Fig.2 PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT V Collector-base voltage Open emitter 30

 9.42. Size:190K  inchange semiconductor
 2sc2981.pdf

isc Silicon NPN Power Transistor 2SC2981 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) Collector-Emitter Saturation Voltage- V = 1.0V(Max)@ I = 2A CE(sat) C Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage, high-speed and high power switching applic

 9.43. Size:74K  inchange semiconductor
 2sc2939.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2939 DESCRIPTION With TO-247 package Switching power transistor High breakdown voltage APPLICATIONS For switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol 3 Emitter Absolute maximum

 9.44. Size:204K  inchange semiconductor
 2sc2921.pdf

isc Silicon NPN Power Transistor 2SC2921 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 160V(Min) (BR)CEO High Power Dissipation Complement to Type 2SA1215 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Colle

 9.45. Size:182K  inchange semiconductor
 2sc2954.pdf

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2954 DESCRIPTION Low Noise and High Gain NF = 2.3 dB TYP. ; S 2 = 20 dB TYP. 21e @ f = 200 MHz NF = 2.4 dB TYP. ; S 2 = 12.5 dB TYP. 21e @ f = 500 MHz Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low noise wide band amplifier and buffer amplifie

 9.46. Size:210K  inchange semiconductor
 2sc2908.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2908 DESCRIPTION With TO-3PN package Low collector saturation voltage APPLICATIONS For use in power amplifier and switching circuits applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBO

 9.47. Size:196K  inchange semiconductor
 2sc2911.pdf

isc Silicon NPN Power Transistor 2SC2911 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 160V(Min) (BR)CEO Good Linearity of h FE High Switching Speed Complement to Type 2SA1209 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage switching and AF 100W predriver applications. ABSOLUTE MAXIMUM R

 9.48. Size:208K  inchange semiconductor
 2sc2914.pdf

isc Silicon NPN Power Transistor 2SC2914 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V (Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 9.49. Size:109K  inchange semiconductor
 2sc2923.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2923 DESCRIPTION With TO-202 package High VCEO Low COB APPLICATIONS For color TV chroma output applications PINNING(See Fig.2) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-202) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALU

 9.50. Size:206K  inchange semiconductor
 2sc2920.pdf

isc Silicon NPN Power Transistor 2SC2920 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V (Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator Motor controls Ultrasonic oscillators Deflection circuits ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER

 9.51. Size:194K  inchange semiconductor
 2sc2979.pdf

isc Silicon NPN Power Transistor 2SC2979 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) Collector-Emitter Saturation Voltage- V = 1.0V(Max)@ I = 0.75A CE(sat) C Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage, high-speed and high power switching app

 9.52. Size:179K  inchange semiconductor
 2sc2902.pdf

isc Product Specification isc Silicon NPN Power Transistor 2SC2902 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage Complement to Type MJ2955 Minimum Lot-to-Lot variations for robust device Performance and reliable operation. APPLICATIONS Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 9.53. Size:203K  inchange semiconductor
 2sc2928.pdf

isc Silicon NPN Power Transistor 2SC2928 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 800V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed and high power applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Coll

 9.54. Size:210K  inchange semiconductor
 2sc2929.pdf

isc Silicon NPN Power Transistor 2SC2929 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE MAXI

 9.55. Size:283K  inchange semiconductor
 2sc2922.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2922 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 180V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1216 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 )

 9.56. Size:191K  inchange semiconductor
 2sc2934.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2934 DESCRIPTION High breakdown voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS The 2SC2934 is suitable for low power switching regulator, DC-DC converter and high voltage switch. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

 9.57. Size:187K  inchange semiconductor
 2sc2943.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2943 DESCRIPTION Low Collector Saturation Voltage Low Collector-Emitter Breakdown Voltage Good Linearity of h FE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in humidifier , DC/DC converter and general purpose applications

 9.58. Size:179K  inchange semiconductor
 2sc2975.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2975 DESCRIPTION With TO-66 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for switching and wide-band amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 8

 9.59. Size:95K  inchange semiconductor
 2sc2987.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2987 DESCRIPTION With TO-3PN package Complement to type 2SA1227 High power dissipation APPLICATIONS For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Abso

 9.60. Size:252K  inchange semiconductor
 2sc2983.pdf

isc Silicon NPN Power Transistor 2SC2983 DESCRIPTION Excellent linearity of h FE Low collector-to-emitter saturation voltage Fast switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and driver stage amplifier applications . ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 9.61. Size:210K  inchange semiconductor
 2sc2913.pdf

isc Silicon NPN Power Transistor 2SC2913 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V (Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a