2SC2996R . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SC2996 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2996 FM/AM RF, MIX, Local, IF Unit: mm High Frequency Amplifier Applications High stability oscillation voltage on FM local oscillator Recommend FM/AM RF, MIX, local and IF Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 40 VCollector-emitter

SMD Type TransistorsNPN Transistors2SC2996SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=30V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Colle

2SC2995 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2995 FM/AM RF, MIX, OSC, IF Unit: mm High Frequency Amplifier Applications High stability oscillation voltage on FM local oscillator. Recommend FM/AM RF, MIX, OSC and IF. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 40 VCollector-emitter vo

Ordering number:EN931DNPN Epitaxial Planar Silicon Transistor2SC2999HF Amplifier ApplicationsFeatures Package Dimensions FBET series.unit:mm Very small-sized package permitting sets to be small-2033sized and slim.[2SC2999] High fT (fT=750MHz typ.) and small Cre(Cre=0.6pF typ).B : BaseC : CollectorE : EmitterSANYO : SPASpecificationsAbsolute Maximum R

2SC2999 TO-92S Transistor (NPN)1. EMITTER TO-92S 2. COLLECTOR 3. BASE 1 2 3 Features High fT(fT=750MHZ typ) and small Cre (Cre=0.6pF typ) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 25 VVCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 3 V IC Collector Current -Continuous 30 mA PC Collector