2SC2996R Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC2996R  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 4 V

Corriente del colector DC máxima (Ic): 0.05 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 150 MHz

Capacitancia de salida (Cc): 1.3 pF

Ganancia de corriente contínua (hFE): 40

Encapsulados: SOT89

  📄📄 Copiar 

 Búsqueda de reemplazo de 2SC2996R

- Selecciónⓘ de transistores por parámetros

 

2SC2996R datasheet

 7.1. Size:507K  toshiba
2sc2996.pdf pdf_icon

2SC2996R

2SC2996 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2996 FM/AM RF, MIX, Local, IF Unit mm High Frequency Amplifier Applications High stability oscillation voltage on FM local oscillator Recommend FM/AM RF, MIX, local and IF Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter

 7.2. Size:1700K  kexin
2sc2996.pdf pdf_icon

2SC2996R

SMD Type Transistors NPN Transistors 2SC2996 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=30V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Colle

 8.1. Size:510K  toshiba
2sc2995.pdf pdf_icon

2SC2996R

2SC2995 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2995 FM/AM RF, MIX, OSC, IF Unit mm High Frequency Amplifier Applications High stability oscillation voltage on FM local oscillator. Recommend FM/AM RF, MIX, OSC and IF. Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter vo

 8.2. Size:189K  sanyo
2sc2999.pdf pdf_icon

2SC2996R

Ordering number EN931D NPN Epitaxial Planar Silicon Transistor 2SC2999 HF Amplifier Applications Features Package Dimensions FBET series. unit mm Very small-sized package permitting sets to be small- 2033 sized and slim. [2SC2999] High fT (fT=750MHz typ.) and small Cre (Cre=0.6pF typ). B Base C Collector E Emitter SANYO SPA Specifications Absolute Maximum R

Otros transistores... 2SC2991, 2SC2992, 2SC2995, 2SC2995O, 2SC2995R, 2SC2995Y, 2SC2996, 2SC2996O, 2SC828, 2SC2996Y, 2SC2997, 2SC2998, 2SC2999, 2SC2999C, 2SC2999D, 2SC2999E, 2SC299S