2SC3026 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc Silicon NPN Power Transistor 2SC3026 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 2.0V(Max)@ I = 5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage power switching character display horizontal deflection output applic

isc Silicon NPN Power Transistor 2SC3025 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 2.0V(Max)@ I = 5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage power switching character display horizontal deflection output applic

2SC3075 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3075 Switching Regulator and High Voltage Switching Unit mm Applications DC-DC Converter Applications DC-AC Converter Applications Excellent switching times tr = 1.0 s (max) t = 1.5 s (max), (I = 0.5 A) f C High collector breakdown voltage V = 400 V CEO Maximum Ratings (Ta = 25

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2SC3074 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3074 High Current Switching Applications Unit mm Low collector saturation voltage VCE (sat) = 0.4 V (max) (IC = 3 A) High speed switching time t = 1.0 s (typ) stg Complementary to 2SA1244 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Col

2SC3011 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3011 UHF C Band Low Noise Amplifier Applications Unit mm High gain S21e 2 = 12dB (typ.) Low noise figure NF = 2.3dB (typ.), f = 1 GHz High fT f = 6.5 GHz T Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 7

2SC3099 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3099 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure NF = 1.7dB, S 2 = 15dB (f = 500 MHz) 21e NF = 2.5dB, S 2 = 9.5dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO

2SC3076 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3076 Power Amplifier Applications Unit mm Power Switching Applications Low collector saturation voltage VCE (sat) = 0.5 V (max) (I = 1 A) C Excellent switching time t = 1.0 s (typ.) stg Complementary to 2SA1241 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-

2SC3072 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3072 Strobe Flash Applications Unit mm Medium Power Amplifier Applications High DC current gain h = 140 to 450 (V = 2 V, I = 0.5 A) FE CE C h = 70 (min) (V = 2 V, I = 4 A) FE CE C Low collector saturation voltage V = 1.0 V (max) (I = 4 A, I = 0.1 A) CE (sat) C B High power dissipa

2SC3098 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3098 UHF C Band Low Noise Amplifier Applications Unit mm Low noise figure NF = 2.5dB, S 2 = 14.5dB (f = 500 MHz) 21e NF = 3.0dB, S 2 = 9.0dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO

Ordering number EN934G NPN Epitaxial Planar Silicon Transistor 2SC3069 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Low-frequency, general-purpose amplifier., various unit mm drivers, muting circuit. 2003A [2SC3069] Features High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation voltage (VCE(sat)=0.

Ordering number EN1011B NPN Triple Diffused Planar Silicon Transistor 2SC3087 500V/5A Switching Regulator Applications Features Package Dimensions High breakdown voltage (VCBO 800V). unit mm Fast switching speed. 2010C Wide ASO. [2SC3087] 1 Base JEDEC TO-220AB 2 Collector EIAJ SC-46 3 Emitter Specifications Absolute Maximum Ratings at Ta = 25 C Parame

Ordering number EN923G NPN Epitaxial Planar Silicon Transistor 2SC3070 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Low-frequency, general-purpose amplifier., various unit mm drivers, muting circuit. 2006A [2SC3070] Features High DC current gain (hFE=800 to 3200). Large current capacity (IC=1.2A). Low collector-to-e

Ordering number EN996B NPN Triple Diffused Planar Silicon Transistor 2SC3039 400V/7A Switching Regulator Applications Features Package Dimensions High breakdown voltage (VCBO 500V). unit mm Fast switching speed. 2010C Wide ASO. [2SC3039] 1 Base JEDEC TO-220AB 2 Collector EIAJ SC-46 3 Emitter Specifications Absolute Maximum Ratings at Ta = 25 C Paramet

Ordering number EN1010B NPN Triple Diffused Planar Silicon Transistor 2SC3086 500V/3A Switching Regulator Applications Features Package Dimensions High breakdown voltage (VCBO 800V). unit mm Fast switching speed. 2010C Wide ASO. [2SC3086] 1 Base JEDEC TO-220AB 2 Collector EIAJ SC-46 3 Emitter Specifications Absolute Maximum Ratings at Ta = 25 C Parame

Ordering number EN949B NPN Triple Diffused Planar Silicon Transistor 2SC3038 400V/4A Switching Regulator Applications Features Package Dimensions High breakdown voltage (VCBO 500V). unit mm Fast switching speed. 2010C Wide ASO. [2SC3038] 1 Base JEDEC TO-220AB 2 Collector EIAJ SC-46 3 Emitter Specifications Absolute Maximum Ratings at Ta = 25 C Paramet

Ordering number EN946G NPN Epitaxial Planar Silicon Transistor 2SC3071 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Low-frequency, general-purpose amplifier., various unit mm drivers, muting circuit. 2006B [2SC3071] Features High DC current gain (hFE=500 to 2000). High breakdown voltage (VCEO 100V). Low collector

Ordering number EN1017B NPN Triple Diffused Planar Silicon Transistor 2SC3088 500V/4A Switching Regulator Applications Features Package Dimensions High breakdown voltage (VCBO 800V). unit mm Fast switching speed. 2022A Wide ASO. [2SC3088] 1 Base 2 Collector 3 Emitter SANYO TO-3PB Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Condi

Ordering number EN947B NPN Triple Diffused Planar Silicon Transistor 2SC3083 400V/6A Switching Regulator Applications Features Package Dimensions High breakdown voltage (VCBO 500V). unit mm Fast switching speed. 2022A Wide ASO. [2SC3083] 1 Base 2 Collector 3 Emitter SANYO TO-3PB Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Condit

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Ordering number EN997B NPN Triple Diffused Planar Silicon Transistor 2SC3040 400V/8A Switching Regulator Applications Features Package Dimensions High breakdown voltage (VCBO 500V). unit mm Fast switching speed. 2022A Wide ASO. [2SC3040] 1 Base 2 Collector 3 Emitter SANYO TO-3PB Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Condit

Ordering number EN866C NPN Epitaxial Planar Silicon Transistor 2SC3000 HF Amplifier Applications Features Package Dimensions FBET series. unit mm High fT and small Cre. 2003A [2SC3000] B Base JEDEC TO-92 C Collector EIAJ SC-43 E Emitter SANYO NP Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base

Ordering number EN938B NPN Triple Diffused Planar Silicon Transistor 2SC3042 400V/12A Switching Regulator Applications Features Package Dimensions High breakdown voltage (VCBO 500V). unit mm Fast switching speed. 2022A Wide ASO. [2SC3042] 1 Base 2 Collector 3 Emitter SANYO TO-3PB Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Condi

Ordering number EN1012A NPN Triple Diffused Planar Silicon Transistor 2SC3089 500V/7A Switching Regulator Applications Features Package Dimensions High breakdown voltage (VCBO 800V). unit mm Fast switching speed. 2022A Wide ASO. [2SC3089] 1 Base 2 Collector 3 Emitter SANYO TO-3PB Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Condi

Ordering number EN943G NPN Epitaxial Planar Silicon Transistor 2SC3068 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Low-frequency, general-purpose amplifier., various unit mm drivers, muting circuit. 2003A [2SC3068] Features High DC current gain (hFE=800 to 3200). Large current capacity. Low collector-to-emitter sat

2SC3052-E MCC TM Micro Commercial Components 2SC3052-F 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC3052-G Phone (818) 701-4933 Fax (818) 701-4939 Features Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN General Low collector

2SC3052-E MCC TM Micro Commercial Components 2SC3052-F 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC3052-G Phone (818) 701-4933 Fax (818) 701-4939 Features Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN General Low collector

2SC3052-E MCC TM Micro Commercial Components 2SC3052-F 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC3052-G Phone (818) 701-4933 Fax (818) 701-4939 Features Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN General Low collector

Power Transistors 2SC3063 Silicon NPN triple diffusion planar type Unit mm For TV video output amplification 8.0+0.5 0.1 3.2 0.2 3.16 0.1 Features High collector to emitter voltage VCEO Small collector output capacitance Cob TO-126B package which requires no insulation plate for installa- tion to the heat sink Absolute Maximum Ratings TC = 25 C Parameter S

Transistor 2SC3077 Silicon NPN planer type For UHF amplification/mixing Unit mm +0.2 2.8 0.3 +0.25 Features 0.65 0.15 1.5 0.05 0.65 0.15 High power gain PG. High transition frequency fT. 1 Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Maximum Ratings (Ta=25 C) 0.1 to

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Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

2SC3004 Silicon NPN Epitaxial Application High gain amplifier medium speed switching Outline TO-126 MOD 2 3 1. Emitter 2. Collector 3. Base 1 2 3 1 2SC3004 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 30 V Emitter to base voltage VEBO 7V Collector current IC 3A Collector peak current

2SC3052 0.2A , 50V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURE A Excellent linearity of DC forward current gain. L Low collector to emitter saturation voltage 3 3 VCE(sat)=0.3V max. (@IC=100mA, IB=10mA) Top View C B 1 1 2 2 K E CLASSIFICATION OF hFE Produc

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better an

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is al

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC3052 TRANSISTOR (NPN) FEATURES 1. BASE Low collector to emitter saturation voltage 2. EMITTER VCE(sat)=0.3V max(@IC=100mA,IB=10mA) 3. COLLECTOR Excellent linearity of DC forward current gain MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Colle

JMnic Product Specification Silicon NPN Power Transistors 2SC3063 DESCRIPTION With TO-126 package High VCEO Low COB APPLICATIONS For TV video output amplification PINNING see Fig.2 PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Col

JMnic Product Specification Silicon NPN Power Transistors 2SC3090 DESCRIPTION With TO-3PN package High breakdown voltage (VCBO 800V) Fast switching speed Wide ASO Safe Operating Area APPLICATIONS 500V/10A Switching Regulator Applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbo

JMnic Product Specification Silicon NPN Power Transistors 2SC3083 DESCRIPTION With TO-3PN package High breakdown voltage (VCBO 500V) Fast switching speed Wide ASO Safe Operating Area APPLICATIONS 400V/6A switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3058 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS For switching regulator and DC/DC converter applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITI

JMnic Product Specification Silicon NPN Power Transistors 2SC3047 DESCRIPTION With TO-220C package High voltage ,high speed switching High reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Ab

JMnic Product Specification Silicon NPN Power Transistors 2SC3089 DESCRIPTION With TO-3PN package High breakdown voltage (VCBO 800V) Fast switching speed Wide ASO Safe Operating Area APPLICATIONS 500V/7A Switching Regulator Applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol

2SC3052 TRANSISTOR (NPN) SOT-23 FEATURES Low collector to emitter saturation voltage VCE(sat)=0.3V max(@IC=100mA,IB=10mA) 1. BASE Excellent linearity of DC forward current gain 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector- Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base

2SC3052 SOT-23 Transistor(NPN) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features Low collector to emitter saturation voltage VCE(sat)=0.3V max(@IC=100mA,IB=10mA) Excellent linearity of DC forward current gain MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector- Base Voltage 50 V VCEO Collector

SMD Type Transistors NPN Transistors 2SC3053 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=30mA Collector Emitter Voltage VCEO=25V 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect

DIP Type Transistors NPN Transistors 2SC3074 TO-251 Features Low collector saturation voltage 1 2 3 High speed switching time tstg = 1.0 s (typ.) Complementary to 2SA1244 1 3 2 1 Base 2 Collector 3 Emitter Unit mm Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V

SMD Type Transistors NPN Transistors 2SC3011 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=30mA Collector Emitter Voltage VCEO=7V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collec

SMD Type Transistors NPN Transistors 2SC3099 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=30mA 1 2 Collector Emitter Voltage VCEO=20V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collec

SMD Type Transistors NPN Transistors 2SC3052 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=100mA 1 2 Collector Emitter Voltage VCEO=50V +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collec

SMD Type Transistors NPN Transistors 2SC3098 SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=20V +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect

2SC3063(3DA3063) NPN /SILICON NPN TRANSISTOR Purpose Video output amplifier. , Features High V , low C . CEO ob /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 300 V CBO V 300 V CEO V 7.0 V EBO I 100 mA C I 200 mA

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC3058 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(sus) High Switching Speed Wide Area of Safe Operation APPLICATIONS Switching regulators Motor controls Ultrasonic generators Class C and D amplifiers Deflection circuits ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR

isc Silicon NPN Power Transistor 2SC3085 DESCRIPTION High Breakdown Voltage- V = 500V(Min) (BR)CBO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base

isc Silicon NPN Power Transistor 2SC3087 DESCRIPTION High Breakdown Voltage- V = 800V(Min) (BR)CBO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3012 DESCRIPTION With TO-3PN package Complement to type 2SA1232 High transition frequency APPLICATIONS Audio frequency power amplifier. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum rat

isc Silicon NPN Power Transistor 2SC3063 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 300V(Min) (BR)CEO Good Linearity of h FE Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV video output amplification. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

isc Silicon NPN Power Transistor 2SC3074 DESCRIPTION With TO-252(DPAK) packaging Excellent linearity of h FE Low collector-to-emitter saturation voltage Fast switching speed Complementary to 2SA1244 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers, high-speed inverters , converters and Other general high curr

isc Silicon NPN Power Transistor 2SC3060 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 850V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Motor controls Ultrasonic generators Class C and D amplifiers Deflection circuit

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SC3032 DESCRIPTION Low Collector Saturation Voltage Low Collector-Emitter Breakdown Voltage Good Linearity of h FE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in humidifier , DC/DC converter and general purpose app

isc Silicon NPN Power Transistor 2SC3039 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

isc Silicon NPN Power Transistor 2SC3094 DESCRIPTION High Breakdown Voltage- V = 800V(Min) (BR)CBO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base

isc Silicon NPN Power Transistor 2SC3086 DESCRIPTION High Breakdown Voltage- V = 800V(Min) (BR)CBO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base

isc Silicon NPN Power Transistor 2SC3061 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 850V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Motor controls Ultrasonic generators Class C and D amplifiers Deflection circuit

isc Silicon NPN Power Transistor 2SC3012 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 130V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1232 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI

isc Silicon NPN Power Transistor 2SC3090 DESCRIPTION High Breakdown Voltage- V = 800V(Min) (BR)CBO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base

isc Silicon NPN Power Transistor 2SC3038 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

isc Silicon NPN Power Transistor 2SC3088 DESCRIPTION High Breakdown Voltage- V = 800V(Min) (BR)CBO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base

isc Silicon NPN Power Transistor 2SC3055 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(sus) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Motor controls Ultrasonic generators Class C and D amplifiers Deflection circu

isc Silicon NPN Power Transistor 2SC3083 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO

isc Silicon NPN Power Transistor 2SC3040 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

isc Silicon NPN Power Transistor 2SC3043 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

isc Silicon NPN Power Transistor 2SC3074 DESCRIPTION With TO-251(IPAK) packaging Excellent linearity of h FE Low collector-to-emitter saturation voltage Fast switching speed Complementary to 2SA1244 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers, high-speed inverters , converters and Other general high curr

isc Silicon NPN Power Transistor 2SC3092 DESCRIPTION High Breakdown Voltage- V = 800V(Min) (BR)CBO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base

isc Silicon NPN Power Transistor 2SC3058 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(sus) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Motor controls Ultrasonic generators Class C and D amplifiers Deflection circu

isc Silicon NPN Power Transistor 2SC3047 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE MAXI

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3076 DESCRIPTION Collector-Emitter Saturation Voltage- V = 0.5V (Max.)@ I = 1A CE(sat) C Complementary to 2SA1241 100% tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier application Power switching application ABSOLUTE MAXIMUM RATINGS(T =25

isc Silicon NPN Power Transistor 2SC3058A DESCRIPTION Collector-Emitter Breakdown Voltage- V = 450V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V ) 1 V@ I = 4A CE(sat C High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For switching regulator and DC/DC converter

isc Silicon NPN Power Transistor 2SC3041 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a UNIT SYMBOL PARAMETER VALUE V

isc Silicon NPN Power Transistor 2SC3042 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

isc Silicon NPN Power Transistor 2SC3089 DESCRIPTION High Breakdown Voltage- V = 800V(Min) (BR)CBO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base