2SC3047 Datasheet. Equivalente

 ..1. Size:110K  fuji
 2sc3047.pdf

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

 ..2. Size:150K  jmnic
 2sc3047.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC3047 DESCRIPTION With TO-220C package High voltage ,high speed switching High reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Ab

 ..3. Size:195K  inchange semiconductor
 2sc3047.pdf

isc Silicon NPN Power Transistor 2SC3047 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE MAXI

 8.1. Size:107K  sanyo
 2sc3040.pdf

Ordering number EN997B NPN Triple Diffused Planar Silicon Transistor 2SC3040 400V/8A Switching Regulator Applications Features Package Dimensions High breakdown voltage (VCBO 500V). unit mm Fast switching speed. 2022A Wide ASO. [2SC3040] 1 Base 2 Collector 3 Emitter SANYO TO-3PB Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Condit

 8.2. Size:85K  sanyo
 2sc3041.pdf

 8.3. Size:93K  sanyo
 2sc3042.pdf

Ordering number EN938B NPN Triple Diffused Planar Silicon Transistor 2SC3042 400V/12A Switching Regulator Applications Features Package Dimensions High breakdown voltage (VCBO 500V). unit mm Fast switching speed. 2022A Wide ASO. [2SC3042] 1 Base 2 Collector 3 Emitter SANYO TO-3PB Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Condi

 8.4. Size:53K  no
 2sc3043.pdf

 8.5. Size:225K  inchange semiconductor
 2sc3040.pdf

isc Silicon NPN Power Transistor 2SC3040 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

 8.6. Size:189K  inchange semiconductor
 2sc3043.pdf

isc Silicon NPN Power Transistor 2SC3043 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

 8.7. Size:190K  inchange semiconductor
 2sc3041.pdf

isc Silicon NPN Power Transistor 2SC3041 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a UNIT SYMBOL PARAMETER VALUE V

 8.8. Size:220K  inchange semiconductor
 2sc3042.pdf

isc Silicon NPN Power Transistor 2SC3042 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V