2SC3048 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC3048
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 50 W
Tensión colector-base (Vcb): 850 V
Tensión colector-emisor (Vce): 500 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 6 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 70
Paquete / Cubierta: TO3
Búsqueda de reemplazo de transistor bipolar 2SC3048
2SC3048 Datasheet (PDF)
2sc3040.pdf
Ordering number:EN997BNPN Triple Diffused Planar Silicon Transistor2SC3040400V/8A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO 500V).unit:mm Fast switching speed.2022A Wide ASO.[2SC3040]1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Condit
2sc3042.pdf
Ordering number:EN938BNPN Triple Diffused Planar Silicon Transistor2SC3042400V/12A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO 500V).unit:mm Fast switching speed.2022A Wide ASO.[2SC3042]1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Condi
2sc3047.pdf
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
2sc3047.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3047 DESCRIPTION With TO-220C package High voltage ,high speed switching High reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAb
2sc3040.pdf
isc Silicon NPN Power Transistor 2SC3040DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
2sc3043.pdf
isc Silicon NPN Power Transistor 2SC3043DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
2sc3047.pdf
isc Silicon NPN Power Transistor 2SC3047DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXI
2sc3041.pdf
isc Silicon NPN Power Transistor 2SC3041DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applications.ABSOLUTE MAXIMUM RATINGS(T =25)aUNITSYMBOL PARAMETER VALUEV
2sc3042.pdf
isc Silicon NPN Power Transistor 2SC3042DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Liste
Recientemente añadidas las descripciónes de los transistores:
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