2SC3063 Todos los transistores

 ..1. Size:63K  panasonic
 2sc3063.pdf

Power Transistors 2SC3063 Silicon NPN triple diffusion planar type Unit mm For TV video output amplification 8.0+0.5 0.1 3.2 0.2 3.16 0.1 Features High collector to emitter voltage VCEO Small collector output capacitance Cob TO-126B package which requires no insulation plate for installa- tion to the heat sink Absolute Maximum Ratings TC = 25 C Parameter S

 ..2. Size:170K  jmnic
 2sc3063.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC3063 DESCRIPTION With TO-126 package High VCEO Low COB APPLICATIONS For TV video output amplification PINNING see Fig.2 PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Col

 ..3. Size:213K  foshan
 2sc3063 3da3063.pdf

2SC3063(3DA3063) NPN /SILICON NPN TRANSISTOR Purpose Video output amplifier. , Features High V , low C . CEO ob /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 300 V CBO V 300 V CEO V 7.0 V EBO I 100 mA C I 200 mA

 ..4. Size:191K  inchange semiconductor
 2sc3063.pdf

isc Silicon NPN Power Transistor 2SC3063 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 300V(Min) (BR)CEO Good Linearity of h FE Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV video output amplification. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

 8.1. Size:86K  sanyo
 2sc3069.pdf

Ordering number EN934G NPN Epitaxial Planar Silicon Transistor 2SC3069 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Low-frequency, general-purpose amplifier., various unit mm drivers, muting circuit. 2003A [2SC3069] Features High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation voltage (VCE(sat)=0.

 8.2. Size:139K  sanyo
 2sc3067.pdf

 8.3. Size:374K  sanyo
 2sc3064.pdf

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 8.4. Size:94K  sanyo
 2sc3066.pdf

 8.5. Size:85K  sanyo
 2sc3068.pdf

Ordering number EN943G NPN Epitaxial Planar Silicon Transistor 2SC3068 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Low-frequency, general-purpose amplifier., various unit mm drivers, muting circuit. 2003A [2SC3068] Features High DC current gain (hFE=800 to 3200). Large current capacity. Low collector-to-emitter sat

 8.6. Size:640K  fuji
 2sc3059 2sc3060 2sc3061 2sc3178.pdf

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By I

 8.7. Size:190K  inchange semiconductor
 2sc3060.pdf

isc Silicon NPN Power Transistor 2SC3060 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 850V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Motor controls Ultrasonic generators Class C and D amplifiers Deflection circuit

 8.8. Size:190K  inchange semiconductor
 2sc3061.pdf

isc Silicon NPN Power Transistor 2SC3061 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 850V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Motor controls Ultrasonic generators Class C and D amplifiers Deflection circuit