2SC307. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

2SC307 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC307

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.8 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 20 pF

Ganancia de corriente contínua (hFE): 85

Encapsulados: TO39

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2SC307 datasheet

0.1. Size:196K 1
2sc3079m 2sc4013.pdf pdf_icon

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2sc3078m 2sc4012.pdf pdf_icon

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2sc3078m 2sc3079m 2sc3080m.pdf pdf_icon

0.4. Size:213K toshiba
2sc3075.pdf pdf_icon

2SC3075 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3075 Switching Regulator and High Voltage Switching Unit mm Applications DC-DC Converter Applications DC-AC Converter Applications Excellent switching times tr = 1.0 s (max) t = 1.5 s (max), (I = 0.5 A) f C High collector breakdown voltage V = 400 V CEO Maximum Ratings (Ta = 25

0.5. Size:232K toshiba
2sc3073.pdf pdf_icon

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

0.6. Size:183K toshiba
2sc3074.pdf pdf_icon

2SC3074 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3074 High Current Switching Applications Unit mm Low collector saturation voltage VCE (sat) = 0.4 V (max) (IC = 3 A) High speed switching time t = 1.0 s (typ) stg Complementary to 2SA1244 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Col

0.7. Size:190K toshiba
2sc3076.pdf pdf_icon

2SC3076 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3076 Power Amplifier Applications Unit mm Power Switching Applications Low collector saturation voltage VCE (sat) = 0.5 V (max) (I = 1 A) C Excellent switching time t = 1.0 s (typ.) stg Complementary to 2SA1241 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-

0.8. Size:184K toshiba
2sc3072.pdf pdf_icon

2SC3072 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3072 Strobe Flash Applications Unit mm Medium Power Amplifier Applications High DC current gain h = 140 to 450 (V = 2 V, I = 0.5 A) FE CE C h = 70 (min) (V = 2 V, I = 4 A) FE CE C Low collector saturation voltage V = 1.0 V (max) (I = 4 A, I = 0.1 A) CE (sat) C B High power dissipa

0.9. Size:91K sanyo
2sc3070.pdf pdf_icon

Ordering number EN923G NPN Epitaxial Planar Silicon Transistor 2SC3070 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Low-frequency, general-purpose amplifier., various unit mm drivers, muting circuit. 2006A [2SC3070] Features High DC current gain (hFE=800 to 3200). Large current capacity (IC=1.2A). Low collector-to-e

0.10. Size:84K sanyo
2sc3071.pdf pdf_icon

Ordering number EN946G NPN Epitaxial Planar Silicon Transistor 2SC3071 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Low-frequency, general-purpose amplifier., various unit mm drivers, muting circuit. 2006B [2SC3071] Features High DC current gain (hFE=500 to 2000). High breakdown voltage (VCEO 100V). Low collector

0.11. Size:41K panasonic
2sc3077 e.pdf pdf_icon

Transistor 2SC3077 Silicon NPN planer type For UHF amplification/mixing Unit mm +0.2 2.8 0.3 +0.25 Features 0.65 0.15 1.5 0.05 0.65 0.15 High power gain PG. High transition frequency fT. 1 Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Maximum Ratings (Ta=25 C) 0.1 to

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2sc3077.pdf pdf_icon

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2sc3074.pdf pdf_icon

DIP Type Transistors NPN Transistors 2SC3074 TO-251 Features Low collector saturation voltage 1 2 3 High speed switching time tstg = 1.0 s (typ.) Complementary to 2SA1244 1 3 2 1 Base 2 Collector 3 Emitter Unit mm Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V

0.14. Size:201K inchange semiconductor
2sc3074.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC3074 DESCRIPTION With TO-252(DPAK) packaging Excellent linearity of h FE Low collector-to-emitter saturation voltage Fast switching speed Complementary to 2SA1244 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers, high-speed inverters , converters and Other general high curr

0.15. Size:191K inchange semiconductor
2sc3074 v2.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC3074 DESCRIPTION With TO-251(IPAK) packaging Excellent linearity of h FE Low collector-to-emitter saturation voltage Fast switching speed Complementary to 2SA1244 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers, high-speed inverters , converters and Other general high curr

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2sc3076.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3076 DESCRIPTION Collector-Emitter Saturation Voltage- V = 0.5V (Max.)@ I = 1A CE(sat) C Complementary to 2SA1241 100% tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier application Power switching application ABSOLUTE MAXIMUM RATINGS(T =25

Otros transistores... 2SC3062 , 2SC3063 , 2SC3064 , 2SC3065 , 2SC3066 , 2SC3067 , 2SC3068 , 2SC3069 , BC556 , 2SC3070 , 2SC3071 , 2SC3072 , 2SC3072A , 2SC3072B , 2SC3072C , 2SC3073 , 2SC3073O .