2SC3074 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SC3074 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3074 High Current Switching Applications Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) High speed switching time: t = 1.0 s (typ) stg Complementary to 2SA1244 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 60 VCol

DIP Type TransistorsNPN Transistors2SC3074TO-251 Features Low collector saturation voltage1 2 3 High speed switching time: tstg = 1.0 s (typ.) Complementary to 2SA12441 321 Base2 Collector3 EmitterUnit: mm Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V

isc Silicon NPN Power Transistor 2SC3074DESCRIPTIONWith TO-252(DPAK) packagingExcellent linearity of hFELow collector-to-emitter saturation voltageFast switching speedComplementary to 2SA1244Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers, high-speed inverters , converters andOther general high curr

isc Silicon NPN Power Transistor 2SC3074DESCRIPTIONWith TO-251(IPAK) packagingExcellent linearity of hFELow collector-to-emitter saturation voltageFast switching speedComplementary to 2SA1244Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers, high-speed inverters , converters andOther general high curr

2SC3075 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3075 Switching Regulator and High Voltage Switching Unit: mm Applications DC-DC Converter Applications DC-AC Converter Applications Excellent switching times: tr = 1.0 s (max) t = 1.5 s (max), (I = 0.5 A) f C High collector breakdown voltage: V = 400 V CEOMaximum Ratings (Ta = 25

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2SC3076 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3076 Power Amplifier Applications Unit: mm Power Switching Applications Low collector saturation voltage: VCE (sat) = 0.5 V (max) (I = 1 A) C Excellent switching time: t = 1.0 s (typ.) stg Complementary to 2SA1241 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-

2SC3072 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3072 Strobe Flash Applications Unit: mm Medium Power Amplifier Applications High DC current gain : h = 140 to 450 (V = 2 V, I = 0.5 A) FE CE C: h = 70 (min) (V = 2 V, I = 4 A) FE CE C Low collector saturation voltage : V = 1.0 V (max) (I = 4 A, I = 0.1 A) CE (sat) C B High power dissipa

Ordering number:EN923GNPN Epitaxial Planar Silicon Transistor2SC3070High hFE, Low-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions Low-frequency, general-purpose amplifier., variousunit:mmdrivers, muting circuit.2006A[2SC3070]Features High DC current gain (hFE=800 to 3200). Large current capacity (IC=1.2A). Low collector-to-e

Ordering number:EN946GNPN Epitaxial Planar Silicon Transistor2SC3071High hFE, Low-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions Low-frequency, general-purpose amplifier., variousunit:mmdrivers, muting circuit.2006B[2SC3071]Features High DC current gain (hFE=500 to 2000). High breakdown voltage (VCEO 100V). Low collector

Transistor2SC3077Silicon NPN planer typeFor UHF amplification/mixingUnit: mm+0.22.8 0.3+0.25Features 0.65 0.15 1.5 0.05 0.65 0.15High power gain PG.High transition frequency fT.1Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine3packing.2Absolute Maximum Ratings (Ta=25C)0.1 to

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3076DESCRIPTIONCollector-Emitter Saturation Voltage-: V = 0.5V (Max.)@ I = 1ACE(sat) CComplementary to 2SA1241100% testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationPower switching applicationABSOLUTE MAXIMUM RATINGS(T =25