2SC3080M
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC3080M
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3
W
Tensión colector-base (Vcb): 30
V
Tensión colector-emisor (Vce): 19
V
Tensión emisor-base (Veb): 4
V
Corriente del colector DC máxima (Ic): 0.05
A
Temperatura operativa máxima (Tj): 125
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 600
MHz
Capacitancia de salida (Cc): 1.2
pF
Ganancia de corriente contínua (hfe): 39
Paquete / Cubierta:
ATR
Búsqueda de reemplazo de transistor bipolar 2SC3080M
2SC3080M
Datasheet (PDF)
8.1. Size:93K sanyo
2sc3087.pdf 
Ordering number:EN1011BNPN Triple Diffused Planar Silicon Transistor2SC3087500V/5A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO 800V).unit:mm Fast switching speed.2010C Wide ASO.[2SC3087]1 : BaseJEDEC : TO-220AB2 : CollectorEIAJ : SC-463 : EmitterSpecificationsAbsolute Maximum Ratings at Ta = 25CParame
8.2. Size:96K sanyo
2sc3086.pdf
Ordering number:EN1010BNPN Triple Diffused Planar Silicon Transistor2SC3086500V/3A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO 800V).unit:mm Fast switching speed.2010C Wide ASO.[2SC3086]1 : BaseJEDEC : TO-220AB2 : CollectorEIAJ : SC-463 : EmitterSpecificationsAbsolute Maximum Ratings at Ta = 25CParame
8.3. Size:94K sanyo
2sc3088.pdf
Ordering number:EN1017BNPN Triple Diffused Planar Silicon Transistor2SC3088500V/4A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO 800V).unit:mm Fast switching speed.2022A Wide ASO.[2SC3088]1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Condi
8.4. Size:98K sanyo
2sc3083.pdf
Ordering number:EN947BNPN Triple Diffused Planar Silicon Transistor2SC3083400V/6A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO 500V).unit:mm Fast switching speed.2022A Wide ASO.[2SC3083]1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Condit
8.5. Size:96K sanyo
2sc3089.pdf
Ordering number:EN1012ANPN Triple Diffused Planar Silicon Transistor2SC3089500V/7A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO 800V).unit:mm Fast switching speed.2022A Wide ASO.[2SC3089]1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Condi
8.6. Size:235K jmnic
2sc3083.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3083 DESCRIPTION With TO-3PN package High breakdown voltage (VCBO500V) Fast switching speed Wide ASOSafe Operating Area APPLICATIONS 400V/6A switching regulator applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol
8.7. Size:220K jmnic
2sc3089.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3089 DESCRIPTION With TO-3PN package High breakdown voltage (VCBO800V) Fast switching speed Wide ASOSafe Operating Area APPLICATIONS 500V/7A Switching Regulator Applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol
8.8. Size:193K inchange semiconductor
2sc3085.pdf
isc Silicon NPN Power Transistor 2SC3085DESCRIPTIONHigh Breakdown Voltage-: V = 500V(Min)(BR)CBOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base
8.9. Size:195K inchange semiconductor
2sc3087.pdf
isc Silicon NPN Power Transistor 2SC3087DESCRIPTIONHigh Breakdown Voltage-: V = 800V(Min)(BR)CBOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base
8.10. Size:216K inchange semiconductor
2sc3086.pdf
isc Silicon NPN Power Transistor 2SC3086DESCRIPTIONHigh Breakdown Voltage-: V = 800V(Min)(BR)CBOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base
8.11. Size:202K inchange semiconductor
2sc3088.pdf
isc Silicon NPN Power Transistor 2SC3088DESCRIPTIONHigh Breakdown Voltage-: V = 800V(Min)(BR)CBOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base
8.12. Size:220K inchange semiconductor
2sc3083.pdf
isc Silicon NPN Power Transistor 2SC3083DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO
8.13. Size:202K inchange semiconductor
2sc3089.pdf
isc Silicon NPN Power Transistor 2SC3089DESCRIPTIONHigh Breakdown Voltage-: V = 800V(Min)(BR)CBOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base
Otros transistores... 2SA1803O
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.
