2SC3080M. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

2SC3080M Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC3080M

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.3 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 19 V

Tensión emisor-base (Veb): 4 V

Corriente del colector DC máxima (Ic): 0.05 A

Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 600 MHz

Capacitancia de salida (Cc): 1.2 pF

Ganancia de corriente contínua (hFE): 39

Encapsulados: ATR

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2SC3080M datasheet

..1. Size:180K 1
2sc3080m 2sc4014.pdf pdf_icon

..2. Size:91K 1
2sc3078m 2sc3079m 2sc3080m.pdf pdf_icon

7.1. Size:180K 1
2sc3080 2sc4041.pdf pdf_icon

7.2. Size:111K rohm
2sc3080.pdf pdf_icon

8.1. Size:93K sanyo
2sc3087.pdf pdf_icon

Ordering number EN1011B NPN Triple Diffused Planar Silicon Transistor 2SC3087 500V/5A Switching Regulator Applications Features Package Dimensions High breakdown voltage (VCBO 800V). unit mm Fast switching speed. 2010C Wide ASO. [2SC3087] 1 Base JEDEC TO-220AB 2 Collector EIAJ SC-46 3 Emitter Specifications Absolute Maximum Ratings at Ta = 25 C Parame

8.2. Size:96K sanyo
2sc3086.pdf pdf_icon

Ordering number EN1010B NPN Triple Diffused Planar Silicon Transistor 2SC3086 500V/3A Switching Regulator Applications Features Package Dimensions High breakdown voltage (VCBO 800V). unit mm Fast switching speed. 2010C Wide ASO. [2SC3086] 1 Base JEDEC TO-220AB 2 Collector EIAJ SC-46 3 Emitter Specifications Absolute Maximum Ratings at Ta = 25 C Parame

8.3. Size:94K sanyo
2sc3088.pdf pdf_icon

Ordering number EN1017B NPN Triple Diffused Planar Silicon Transistor 2SC3088 500V/4A Switching Regulator Applications Features Package Dimensions High breakdown voltage (VCBO 800V). unit mm Fast switching speed. 2022A Wide ASO. [2SC3088] 1 Base 2 Collector 3 Emitter SANYO TO-3PB Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Condi

8.4. Size:98K sanyo
2sc3083.pdf pdf_icon

Ordering number EN947B NPN Triple Diffused Planar Silicon Transistor 2SC3083 400V/6A Switching Regulator Applications Features Package Dimensions High breakdown voltage (VCBO 500V). unit mm Fast switching speed. 2022A Wide ASO. [2SC3083] 1 Base 2 Collector 3 Emitter SANYO TO-3PB Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Condit

8.5. Size:96K sanyo
2sc3089.pdf pdf_icon

Ordering number EN1012A NPN Triple Diffused Planar Silicon Transistor 2SC3089 500V/7A Switching Regulator Applications Features Package Dimensions High breakdown voltage (VCBO 800V). unit mm Fast switching speed. 2022A Wide ASO. [2SC3089] 1 Base 2 Collector 3 Emitter SANYO TO-3PB Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Condi

8.6. Size:235K jmnic
2sc3083.pdf pdf_icon

JMnic Product Specification Silicon NPN Power Transistors 2SC3083 DESCRIPTION With TO-3PN package High breakdown voltage (VCBO 500V) Fast switching speed Wide ASO Safe Operating Area APPLICATIONS 400V/6A switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol

8.7. Size:220K jmnic
2sc3089.pdf pdf_icon

JMnic Product Specification Silicon NPN Power Transistors 2SC3089 DESCRIPTION With TO-3PN package High breakdown voltage (VCBO 800V) Fast switching speed Wide ASO Safe Operating Area APPLICATIONS 500V/7A Switching Regulator Applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol

8.8. Size:193K inchange semiconductor
2sc3085.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC3085 DESCRIPTION High Breakdown Voltage- V = 500V(Min) (BR)CBO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base

8.9. Size:195K inchange semiconductor
2sc3087.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC3087 DESCRIPTION High Breakdown Voltage- V = 800V(Min) (BR)CBO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base

8.10. Size:216K inchange semiconductor
2sc3086.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC3086 DESCRIPTION High Breakdown Voltage- V = 800V(Min) (BR)CBO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base

8.11. Size:202K inchange semiconductor
2sc3088.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC3088 DESCRIPTION High Breakdown Voltage- V = 800V(Min) (BR)CBO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base

8.12. Size:220K inchange semiconductor
2sc3083.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC3083 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO

8.13. Size:202K inchange semiconductor
2sc3089.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC3089 DESCRIPTION High Breakdown Voltage- V = 800V(Min) (BR)CBO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base

Otros transistores... 2SC3075 , 2SC3076 , 2SC3076O , 2SC3076Y , 2SC3077 , 2SC3078M , 2SC3079M , 2SC308 , BD222 , 2SC3081 , 2SC3082 , 2SC3083 , 2SC3084 , 2SC3085 , 2SC3086 , 2SC3087 , 2SC3088 .