2SC3096 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SC3099 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3099 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure NF = 1.7dB, |S |2 = 15dB (f = 500 MHz) 21e NF = 2.5dB, |S |2 = 9.5dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO

2SC3098 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3098 UHF~C Band Low Noise Amplifier Applications Unit: mm Low noise figure NF = 2.5dB, |S |2 = 14.5dB (f = 500 MHz) 21e NF = 3.0dB, |S |2 = 9.0dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 30 VCollector-emitter voltage VCEO

JMnic Product Specification Silicon NPN Power Transistors 2SC3090 DESCRIPTION With TO-3PN package High breakdown voltage (VCBO800V) Fast switching speed Wide ASOSafe Operating Area APPLICATIONS 500V/10A Switching Regulator Applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbo

SMD Type TransistorsNPN Transistors2SC3099SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features Collector Current Capability IC=30mA1 2 Collector Emitter Voltage VCEO=20V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collec

SMD Type TransistorsNPN Transistors2SC3098SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=20V+0.1+0.050.95 -0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect

isc Silicon NPN Power Transistor 2SC3094DESCRIPTIONHigh Breakdown Voltage-: V = 800V(Min)(BR)CBOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base

isc Silicon NPN Power Transistor 2SC3090DESCRIPTIONHigh Breakdown Voltage-: V = 800V(Min)(BR)CBOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base

isc Silicon NPN Power Transistor 2SC3092DESCRIPTIONHigh Breakdown Voltage-: V = 800V(Min)(BR)CBOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base