2SC3109 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC3109
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.6 W
Tensión colector-base (Vcb): 36 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 940 MHz
Ganancia de corriente contínua (hFE): 30
Encapsulados: TO131
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2SC3109 datasheet
2sc3880s 2sc3195 2sc3194 ktc9016 ktc9018 bf599 2sc3879s 2sc3193 2sc3192 ktc9011 2sc3878s 2sc3191 2sc3190.pdf
2sc3113.pdf
2SC3113 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3113 For Audio Amplifier and Switching Applications Unit mm High DC current gain h = 600 3600 FE High breakdown voltage V = 50 V CEO High collector current I = 150 mA (max) C Small package Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V
2sc3180.pdf
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2sc3124.pdf
2SC3124 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3124 TV Tuner, VHF Oscillator Applications Unit mm Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 15 V Emitter-base voltage VEBO 3 V Collector current IC 50 mA Base current IB 25 mA Collector power dissipation PC 150 mW Ju
2sc3120.pdf
2SC3120 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3120 TV Tuner, UHF Mixer Applications Unit mm VHF UHF Band RF Amplifier Applications Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 15 V Emitter-base voltage VEBO 3 V Collector current IC 50 mA Base current IB 25 mA Colle
2sc3125.pdf
2SC3125 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3125 TV Final Picture IF Amplifier Applications Unit mm Good linearity of fT Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 25 V Emitter-base voltage VEBO 4 V Collector current IC 50 mA Base current IB 25 mA Collector
2sc3181.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
2sc3123.pdf
2SC3123 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3123 TV VHF Mixer Applications Unit mm High conversion gain Gce = 23dB (typ.) Low reverse transfer capacitance C = 0.4 pF (typ.) re Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 3
2sc3121.pdf
2SC3121 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3121 TV Tuner, UHF Oscillator Applications (common base) Unit mm TV Tuner, UHF Converter Applications (common base) High transition frequency fT = 1500 MHz (typ.) Excellent linearity Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emi
2sc3138-o 2sc3138-y.pdf
2SC3138 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3138 High Voltage Amplifier Applications Unit mm High Voltage Switching Applications High voltage VCBO = 200 V (max) VCEO = 200 V (max) Small flat package Complementary to 2SA1255 Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 20
2sc3182.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
2sc3122.pdf
2SC3122 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3122 TV VHF RF Amplifier Applications Unit mm High gain Gpe = 24dB (typ.) (f = 200 MHz) Low noise NF = 2.0dB (typ.) (f = 200 MHz) Excellent forward AGC characteristics Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter volta
2sc3112.pdf
2SC3112 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3112 For Audio Amplifier and Switching Applications Unit mm High DC current gain hFE = 600 3600 High breakdown voltage V = 50 V CEO High collector current I = 150 mA (max) C Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collect
2sc3138.pdf
2SC3138 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3138 High Voltage Switching Applications Unit mm High voltage VCBO = 200 V (max) V = 200 V (max) CEO Small flat package Complementary to 2SA1255 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 200 V Collector-emitter voltage VCEO
2sc3184.pdf
Ordering number EN1252C NPN Triple Diffused Planar Silicon Transistor 2SC3184 800V/0.5A Switching Regulator Applications Features Package Dimensions High breakdown voltage (VCBO 900V). unit mm Fast switching speed. 2010C Wide ASO. [2SC3184] 1 Base JEDEC TO-220AB 2 Collector EIAJ SC-46 3 Emitter Specifications Absolute Maximum Ratings at Ta = 25 C Para
2sc3150.pdf
Ordering number EN1069C NPN Triple Diffused Planar Silicon Transistor 2SC3150 800V/3A Switching Regulator Applications Features Package Dimensions High breakdown voltage (VCBO 900V). unit mm Fast switching speed. 2010C Wide ASO. [2SC3150] 1 Base JEDEC TO-220AB 2 Collector EIAJ SC-46 3 Emitter Specifications Absolute Maximum Ratings at Ta = 25 C Parame
2sa1248 2sc3116.pdf
Ordering number ENN1032B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1248/2SC3116 160V/700mA Switching Applications Uses Package Dimensions Color TV sound output, converters, inverters. unit mm 2009B Features [2SA1248/2SC3116] High breakdown voltage. 8.0 2.7 4.0 Large current capacity. Using MBIT process 3.0 1.6 0.8 0.8 0.6 0.5 1 Emitter 1 2 3 2 Co
2sc3151.pdf
Ordering number EN1070C NPN Triple Diffused Planar Silicon Transistor 2SC3151 800V/1.5A Switching Regulator Applications Features Package Dimensions High breakdown voltage (VCBO 900V). unit mm Fast switching speed. 2022A Wide ASO. [2SC3151] 1 Base 2 Collector 3 Emitter SANYO TO-3PB Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Con
2sc3152.pdf
Ordering number EN1071D NPN Triple Diffused Planar Silicon Transistor 2SC3152 800V/3A Switching Regulator Applications Features Package Dimensions High breakdown voltage (VCBO 900V). unit mm Fast switching speed. 2022A Wide ASO. [2SC3152] 1 Base 2 Collector 3 Emitter SANYO TO-3PB Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Condi
2sa1249 2sc3117.pdf
Ordering number ENN1060C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1249/2SC3117 160V/1.5A Switching Applications Uses Package Dimensions Color TV sound output, converters, inverters. unit mm 2009B Features [2SA1249/2SC3117] 8.0 High breakdown voltage. 2.7 4.0 Large current capacity. Adoption of MBIT process. 3.0 1.6 0.8 0.8 0.6 0.5 1 Emitter 1 2 3 2
2sc3149.pdf
Ordering number EN1068C NPN Triple Diffused Planar Silicon Transistor 2SC3149 800V/1.5A Switching Regulator Applications Features Package Dimensions High breakdown voltage (VCBO 900V). unit mm Fast switching speed. 2010C Wide ASO. [2SC3149] 1 Base JEDEC TO-220AB 2 Collector EIAJ SC-46 3 Emitter Specifications Absolute Maximum Ratings at Ta = 25 C Para
2sc3183.pdf
Ordering number EN1251A NPN Triple Diffused Planar Silicon Transistor 2SC3183 800V/0.2A Switching Regulator Applications Features Package Dimensions High breakdown voltage (VCBO 900V). unit mm Fast switching speed. 2010C Wide ASO. [2SC3183] 1 Base JEDEC TO-220AB 2 Collector EIAJ SC-46 3 Emitter Specifications Absolute Maximum Ratings at Ta = 25 C Para
2sc3143.pdf
Ordering number EN1057B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1257/2SC3143 High-Voltage Switching, AF Power Amp, 100W Output Predriver Applications Features Package Dimensions Very small-sized package permitting the 2SA1257/ unit mm 2SC3143-applied sets to be made small and slim. 2018A High breakdown voltage (VCEO 160V). [2SA1257/2SC3143] Small output capaci
2sc3145.pdf
Ordering number EN1059D PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SA1259/2SC3145 60V/5A for High-Speed Drivers Applications Features Package Dimensions High fT. unit mm High switching speed. 2010C Wide ASO. [2SA1259/2SC3145] JEDEC TO-220AB 1 Base EIAJ SC-46 2 Collector ( ) 2SA1259 3 Emitter Specifications Absolute Maximum Ratings at Ta = 2
2sa1252 2sc3134.pdf
Ordering number ENN1048C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1252/2SC3134 High VEBO, AF Amp Applications Features Package Dimensions High VEBO. unit mm Wide ASO and high durability against breakdown. 2018B [2SA1252/2SC3134] 0.4 0.16 3 0 to 0.1 1 0.95 0.95 2 1.9 2.9 1 Base 2 Emitter ( ) 2SA1252 3 Collector SANYO CP Specifications Absolute Maxim
2sc3142.pdf
Ordering number EN1066A NPN Epitaxial Planar Silicon Transistor 2SC3142 High-Frequency General-Purpose Amplifier Applications Features Package Dimensions FBET series. unit mm Compact package enabling compactness of sets. 2018A High fT and small cre (fT=750MHz typ, cre=0.6 typ). [2SC3142] C Collector B Base E Emitter SANYO CP Specifications Absolute Maximum R
2sc3153.pdf
Ordering number EN1072D NPN Triple Diffused Planar Silicon Transistor 2SC3153 800V/6A Switching Regulator Applications Features Package Dimensions High breakdown voltage (VCBO 900V). unit mm Fast switching speed. 2022A Wide ASO. [2SC3153] 1 Base 2 Collector 3 Emitter SANYO TO-3PB Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Condi
2sa1246 2sc3114 2sc3114.pdf
Ordering number ENN1047C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1246/2SC3114 High-VEBO, AF Amp Applications Features Package Dimensions High VEBO. unit mm Wide ASO and highly resistant to breakdown. 2003B [2SA1246/2SC3114] 5.0 4.0 4.0 0.45 0.5 0.44 0.45 1 2 3 1 Emitter 2 Collector ( ) 2SA1246 3 Base 1.3 1.3 SANYO NP Specifications Absolute Maxim
2sc3135.pdf
Ordering number EN1049D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1253/2SC3135 High-hFE, AF Amp Applications Features Package Dimensions High VEBO. unit mm Wide ASO and high durability against breakdown. 2033 [2SA1253/2SC3135] B Base C Collector E Emitter ( ) 2SA1253 SANYO SPA Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditi
2sc3176.pdf
Ordering number EN1312B NPN Epitaxial Planar Silicon Transistor 2SC3176 CRT Horizontal Deflection Output Applications (with Damper Diode) Features Package Dimensions Fast switching speed. unit mm Especially suited for use in high-definition CRT 2010C display (VCC=12 to 24V). [2SC3176] Wide ASO. 1 Base JEDEC TO-220AB 2 Collector EIAJ SC46 3 Emitter Specifi
2sc3187 e.pdf
Transistor 2SC3187 Silicon NPN triple diffusion planer type For small TV video output Unit mm 5.0 0.2 4.0 0.2 Features High collector to emitter voltage VCEO. Small collector output capacitance Cob. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 300 V 1.27 1.27 Collector to emitter voltage VC
2sc3130.pdf
Transistor 2SC3130 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Unit mm +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features High transition frequency fT. Small collector output capacitance Cob and common base reverse 1 transfer capacitance Crb. 3 Mini type package, allowing downsizing of the equipment and automatic insert
2sc3187.pdf
Transistor 2SC3187 Silicon NPN triple diffusion planer type For small TV video output Unit mm 5.0 0.2 4.0 0.2 Features High collector to emitter voltage VCEO. Small collector output capacitance Cob. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 300 V 1.27 1.27 Collector to emitter voltage VC
2sc3130 e.pdf
Transistor 2SC3130 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Unit mm +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features High transition frequency fT. Small collector output capacitance Cob and common base reverse 1 transfer capacitance Crb. 3 Mini type package, allowing downsizing of the equipment and automatic insert
2sc3149.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SC3149 Preliminary NPN SILICON TRANSISTOR NPN TRANSISTOR DESCRIPTION The UTC 2SC3149 are series of NPN silicon planar transistor, and its suited to be used in power amplifier applications. FEATURES * Suit for power amplifier applications ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2
2sc3059 2sc3060 2sc3061 2sc3178.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By I
2sc3127 2sc3128 2sc3510.pdf
2SC3127, 2SC3128, 2SC3510 Silicon NPN Epitaxial Application UHF/VHF wide band amplifier Outline MPAK 2SC3127 3 1 1. Emitter 2. Base 2 3. Collector 2SC3127, 2SC3128, 2SC3510 TO-92 (2) 2SC3128, 2SC3510 1. Base 2. Emitter 3. Collector 3 2 1 Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SC3127*1 2SC3128 2SC3510 Unit Collector to base voltage VCBO 20 20 20 V Collector t
2n3904 2n3906 2n5401 2n5551 2sa1271 2sa1273 2sa1275 2sa1276 2sa1366 2sa1657 2sa1658 2sb1366 2sb988 2sc3190 2sc3191 2sc3192.pdf
2sc3199.pdf
2SC3199 0.15 A , 50 V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92S High Current Capability High DC Current Gain Millimeter REF. Min. Max. Small Package A 3.90 4.10 B 3.05 3.25 C 1.42 1.62 D 15.1 15.5 E 2.97 3.27 APPLICATIONS F 0.66 0.86 G 2.44 2.6
2sc3149s.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors TO 126 2SC3149S TRANSISTOR (NPN) 1.BASE FEATURES 2.COLLECTOR High Breakdown Voltage 3.EMITTER Fast Switching Speed Wide ASO (Safe Operating Area) MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 1400 V VCEO Colle
2sc3151.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3151 DESCRIPTION With TO-3PN package High breakdown voltage (VCBO 900V) Fast switching speed Wide ASO Safe Operating Area APPLICATIONS 800V/1.5A Switching Regulator Applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symb
2sc3117.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3117 DESCRIPTION With TO-126 package Complement to type 2SA1249 High breakdown voltage Large current capacity APPLICATIONS Color TV sound output;converters; Inverters applications 160V/1.5A switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3
2sc3148.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3148 DESCRIPTION With TO-220C package High collector breakdown voltage VCEO=800V(Min) Excellent switching time tr=1.0 s(Max.) tf=1.0 s(Max.@IC=0.8A APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications PINNING PIN DESCRIPTION 1 B
2sc3152.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3152 DESCRIPTION With TO-3PN package High breakdown voltage (VCBO 900V) Fast switching speed Wide ASO Safe Operating Area APPLICATIONS 800V/3A Switching Regulator Applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol
2sc3157.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3157 DESCRIPTION With TO-220 package High switching speed Low collector saturation voltage Complement to type 2SA1261 APPLICATIONS For high voltage ,high speed and power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETE
2sc3180n.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3180N DESCRIPTION With TO-3P(I) package Complement to type 2SA1263N APPLICATIONS Power amplifier applications Recommend for 40W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol
2sc3149.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3149 DESCRIPTION With TO-220C package High breakdown voltage VCBO=900V(Min) Fast switching speed. Wide ASO (Safe Operating Area) APPLICATIONS 800V/1.5A switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum r
2sc3158.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3158 DESCRIPTION With TO-220F package High voltage High switching speed APPLICATIONS For switching regulator applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO
2sc3170.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3170 DESCRIPTION With TO-220Fa package Low collector saturation voltage High breakdown voltge APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage
2sc3182n.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3182N DESCRIPTION With TO-3P(I) package Complement to type 2SA1265N APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol
2sc3181n.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3181N DESCRIPTION With TO-3P(I) package Complement to type 2SA1264N APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol
2sc3153.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3153 DESCRIPTION With TO-3PN package High breakdown voltage (VCBO 900V) Fast switching speed Wide ASO Safe Operating Area APPLICATIONS 800V/6A switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol
2sc3163.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3163 DESCRIPTION With TO-220C package High breakdown voltage High speed switching PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-e
2sc3164.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3164 DESCRIPTION With TO-247 package Switching power transistor High breakdown voltage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol 3 Emitter Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collect
2sc3159.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3159 DESCRIPTION With TO-220F package High voltage High switching speed APPLICATIONS For switching regulator applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO
2sc3169.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3169 DESCRIPTION With TO-220Fa package Low collector saturation voltage High breakdown voltge APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage
2sc3179.pdf
2SC3179 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1262) Application Audio and General Purpose External Dimensions MT-25(TO220) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) 2SC3179 Unit Symbol 2SC3179 Symbol Conditions Unit 0.2 4.8 0.2 10.2 0.1 VCBO 80 ICBO VCB=80V 100max A 2.0 V 100max A VCEO 60 IEBO VEB=6V
2sc3124.pdf
SMD Type Transistors NPN Transistors 2SC3124 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=15V +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect
2sc3120.pdf
SMD Type Transistors NPN Transistors 2SC3120 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=15V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Colle
2sc3125.pdf
SMD Type Transistors NPN Transistors 2SC3125 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=25V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Colle
2sc3130.pdf
SMD Type Transistors NPN Transistors 2SC3130 SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=10V +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collec
2sc3123.pdf
SMD Type Transistors NPN Transistors 2SC3123 SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=20V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Colle
2sc3121.pdf
SMD Type Transistors NPN Transistors 2SC3121 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=15V +0.1 0.95-0.1 0.1+0.05 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector
2sc3143.pdf
SMD Type Transistors NPN Transistors 2SC3143 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features High breakdown voltage Small output capacitance. 1 2 Complementary to 2SA1257 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 180
2sc3142.pdf
SMD Type Transistors NPN Transistors 2SC3142 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=30mA 1 2 Collector Emitter Voltage VCEO=20V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Colle
2sc3122.pdf
SMD Type Transistors NPN Transistors 2SC3122 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=20mA Collector Emitter Voltage VCEO=30V 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect
2sc3134.pdf
SMD Type Transistors NPN Transistors 2SC3134 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features High VEBO. Wide ASO and high durability against breakdown. 1 2 Complementary to 2SA1252 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Volta
2sc3127.pdf
SMD Type Transistors NPN Transistors 2SC3127 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=12V +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collecto
2sc3138.pdf
SMD Type Transistors NPN Transistors 2SC3138 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=200V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 Complementary to 2SA1255 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collecto
2sc3150a.pdf
2SC3150A(3DD3150A) NPN /SILICON NPN TRANSISTOR Purpose Switching regulator applications. Features High V , high speed switching, wide ASO. CEO /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 1000 V CBO V 750 V
2sc3150k 2sc3150l 2sc3150m.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC3150 DESCRIPTION High Breakdown Voltage- V = 900V(Min) (BR)CBO Fast Switching Speed Wide Area of Safe Operation APPLICATIONS Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 900 V CBO V Collector-Emitter Voltage 800 V
2sc3157m 2sc3157l 2sc3157k.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC3157 DESCRIPTION Low Collector Saturation Voltage- V = 0.6V(Max.)@I = 5A CE(sat) C Fast Switching Speed Complement to Type 2SA1261 APPLICATIONS Developed for high-voltage high-speed switching, and is ideal for use as a driver in devices such as switching reg- lators, DC/DC converters, and high frequency pow
2sc3181r 2sc3181o.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC3181 DESCRIPTION Low Collector Saturation Voltage- V = 2.0V(Max.) @I = 6A CE(sat) C Good Linearity of h FE Complement to Type 2SA1264 APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO
2sc3184.pdf
isc Silicon NPN Power Transistor 2SC3184 DESCRIPTION High breakdown voltage - VCBO 900V Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Switching Regulator applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 900 V CBO
2sc3150.pdf
isc Silicon NPN Power Transistor 2SC3150 DESCRIPTION High Breakdown Voltage- V = 900V(Min) (BR)CBO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base
2sc3151.pdf
isc Silicon NPN Power Transistor 2SC3151 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications. ABSOLUTE
2sc3117.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3117 DESCRIPTION With TO-126 package Complement to type 2SA1249 High breakdown voltage Large current capacity APPLICATIONS Color TV sound output;converters; Inverters applications 160V/1.5A switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 m
2sc3148.pdf
isc Silicon NPN Power Transistor 2SC3148 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications. ABSOLUTE
2sc3152.pdf
isc Silicon NPN Power Transistor 2SC3152 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications. ABSOLUTE
2sc3180.pdf
isc Silicon NPN Power Transistor 2SC3180 DESCRIPTION Low Collector Saturation Voltage- V = 2.0V(Max.) @I = 5A CE(sat) C Good Linearity of h FE Complement to Type 2SA1263 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 40W high fidelity audio frequency amplifier output stage appl
2sc3124.pdf
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3124 DESCRIPTION High Gain Bandwidth Product f = 1100 MHz TYP. T Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV tuner ,VHF oscillator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 30 V CBO V Collec
2sc3157.pdf
isc Silicon NPN Power Transistor 2SC3157 DESCRIPTION Low Collector Saturation Voltage- V = 0.6V(Max.)@I = 5A CE(sat) C Fast Switching Speed Complement to Type 2SA1261 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Developed for high-voltage high-speed switching, and is ideal for use as a driver in devices such as switching
2sc3144.pdf
isc Silicon NPN Darlington Power Transistor 2SC3144 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO High DC Current Gain h = 2000(Min) @I = 1.5A FE C Wide Area of Safe Operation Complement to Type 2SA1258 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-speed drivers applications.
2sc3110.pdf
INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC3110 DESCRIPTION Low Noise High Gain High Current-Gain Bandwidth Product APPLICATIONS Designed for use in RF wide band low noise amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 15 V VCEO Collector-Emitter Voltage 12 V VEBO Emit
2sc3180n.pdf
isc Silicon NPN Power Transistor 2SC3180N DESCRIPTION Low Collector Saturation Voltage- V = 2.0V(Max.) @I = 5A CE(sat) C Good Linearity of h FE Complement to Type 2SA1263N Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 40W high fidelity audio frequency amplifier output stage ap
2sc3149.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3149 DESCRIPTION With TO-220C package High breakdown voltage VCBO=900V(Min) Fast switching speed. Wide ASO (Safe Operating Area) APPLICATIONS 800V/1.5A switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute
2sc3168.pdf
isc Product Specification isc Silicon NPN Power Transistor 2SC3168 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage Minimum Lot-to-Lot variations for robust device Performance and reliable operation. APPLICATIONS Switching regulator Motor controls Deflections circuits ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V C
2sc3158.pdf
isc Silicon NPN Power Transistor 2SC3158 DESCRIPTION Low Collector Saturation Voltage- V = 1.0V(Max.)@I = 3A CE(sat) C Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator, DC-DC converter and high frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY
2sc3125.pdf
INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC3125 DESCRIPTION Good Linearity of fT APPLICATIONS Designed for TV Final Picture IF amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 4 V IC Collector Curre
2sc3179.pdf
isc Silicon NPN Power Transistor 2SC3179 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min.) (BR)CEO Low Collector Saturation Voltage V = 0.6V(Max.)@I = 2A CE(sat) C Complement to Type 2SA1262 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM
2sc3171.pdf
isc Silicon NPN Power Transistor 2SC3171 DESCRIPTION Collector-Emiiter Sustaining Voltage- V = 400V(Min.) CEO(SUS) Low Collector Saturation Voltage V = 1.0V(Max.)@ I = 5A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATI
2sc3170.pdf
isc Silicon NPN Power Transistor 2SC3170 DESCRIPTION Collector-Emiiter Sustaining Voltage- V = 400V(Min.) CEO(SUS) Low Collector Saturation Voltage V = 1.0V(Max.)@ I = 3A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATI
2sc3181.pdf
isc Silicon NPN Power Transistor 2SC3181 DESCRIPTION Low Collector Saturation Voltage- V = 2.0V(Max.) @I = 6A CE(sat) C Good Linearity of h FE Complement to Type 2SA1264 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage appl
2sc3123.pdf
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3123 DESCRIPTION High Conversion Gain G = 23dB TYP. ce Low Reverse Transfer Capacitance C = 0.4pF TYP. re Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV VHF mixer applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collecto
2sc3177.pdf
isc Silicon NPN Power Transistor 2SC3177 DESCRIPTION With TO-126 packaging Low collector-to-emitter saturation voltage Fast switching speed Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Relay drivers High-speed inverters Converters Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U
2sc3182n.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3182N DESCRIPTION With TO-3P(I) package Complement to type 2SA1265N APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P
2sc3121.pdf
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3121 DESCRIPTION High Gain Bandwidth Product f = 1500 MHz TYP. T Excellent Linearity Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS TV tuner, UHF oscillator applications. TV tuner, UHF converter applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE
2sc3146.pdf
isc Silicon NPN Darlington Power Transistor 2SC3146 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO High DC Current Gain h = 2000(Min) @I = 3.5A FE C Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-speed drivers applications. ABSOLUTE MAXIMUM RATINGS(T =
2sc3175.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3175 DESCRIPTION Low Collector Saturation Voltage High switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Especially suited for use in high definition CRT display(V =12 to 24V) CC ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET
2sc3181n.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3181N DESCRIPTION With TO-3P(I) package Complement to type 2SA1264N APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P
2sc3156.pdf
isc Silicon NPN Power Transistor 2SC3156 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME
2sc3153.pdf
isc Silicon NPN Power Transistor 2SC3153 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications. ABSOLUTE
2sc3163.pdf
isc Silicon NPN Power Transistor 2SC3163 DESCRIPTION Low Collector Saturation Voltage- V = 1.0V(Max.)@I = 3A CE(sat) C Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator, DC-DC converter and high frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY
2sc3182.pdf
isc Silicon NPN Power Transistor 2SC3182 DESCRIPTION Low Collector Saturation Voltage- V = 2.0V(Max.) @I = 7A CE(sat) C Good Linearity of h FE Complement to Type 2SA1265 Minimum Lot-to-Lot variations for robust device performance and reliable operation] APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage app
2sc3164.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3164 DESCRIPTION With TO-247 package Switching power transistor High breakdown voltage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol 3 Emitter Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE U
2sc3122.pdf
INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC3122 DESCRIPTION High Gain- Gpe= 24dB TYP. @ f= 200MHz Low Noise- NF= 2.0dB TYP. @ f= 200MHz APPLICATIONS Designed for TV VHF RF amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltag
2sc3159.pdf
isc Silicon NPN Power Transistor 2SC3159 DESCRIPTION Low Collector Saturation Voltage- V = 1.0V(Max.)@I = 6A CE(sat) C Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator, DC-DC converter and high frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY
2sc3127.pdf
INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC3127 DESCRIPTION Low Noise and High Gain NF = 2.2 dB TYP. @VCE = 5 V, IC = 5 mA, f = 900 MHz PG = 10.5 dB TYP. @VCE = 5 V, IC = 20 mA, f = 900 MHz APPLICATIONS Designed for use in low-noise and small signal amplifiers from VHF UHF band. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAME
2sc3169.pdf
isc Silicon NPN Power Transistor 2SC3169 DESCRIPTION Collector-Emiiter Sustaining Voltage- V = 400V(Min.) CEO(SUS) Low Collector Saturation Voltage V = 1.0V(Max.)@ I = 1A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATI
Otros transistores... 2SC3101 , 2SC3102 , 2SC3103 , 2SC3104 , 2SC3105 , 2SC3106 , 2SC3107 , 2SC3108 , 2N2222A , 2SC3110 , 2SC3111 , 2SC3112 , 2SC3112A , 2SC3112B , 2SC3113 , 2SC3113A , 2SC3113B .
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