2SC3112B . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC3112B
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.4 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Capacitancia de salida (Cc): 3.5 pF
Ganancia de corriente contínua (hfe): 1200
Paquete / Cubierta: TO92
Búsqueda de reemplazo de transistor bipolar 2SC3112B
2SC3112B Datasheet (PDF)
2sc3112.pdf
2SC3112 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3112 For Audio Amplifier and Switching Applications Unit: mm High DC current gain: hFE = 600~3600 High breakdown voltage: V = 50 V CEO High collector current: I = 150 mA (max) CMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 50 VCollect
2sc3113.pdf
2SC3113 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3113 For Audio Amplifier and Switching Applications Unit: mm High DC current gain: h = 600~3600 FE High breakdown voltage: V = 50 V CEO High collector current: I = 150 mA (max) C Small package Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 50 V
2sa1248 2sc3116.pdf
Ordering number:ENN1032BPNP/NPN Epitaxial Planar Silicon Transistors2SA1248/2SC3116160V/700mA Switching ApplicationsUses Package Dimensions Color TV sound output, converters, inverters.unit:mm2009BFeatures[2SA1248/2SC3116] High breakdown voltage. 8.02.74.0 Large current capacity. Using MBIT process3.01.60.80.80.60.51 : Emitter1 2 32 : Co
2sa1249 2sc3117.pdf
Ordering number:ENN1060CPNP/NPN Epitaxial Planar Silicon Transistors2SA1249/2SC3117160V/1.5A Switching ApplicationsUses Package Dimensions Color TV sound output, converters, inverters. unit:mm2009BFeatures [2SA1249/2SC3117]8.0 High breakdown voltage.2.74.0 Large current capacity. Adoption of MBIT process.3.01.60.80.80.60.51 : Emitter1 2 32
2sa1246 2sc3114 2sc3114.pdf
Ordering number:ENN1047CPNP/NPN Epitaxial Planar Silicon Transistors2SA1246/2SC3114High-VEBO, AF Amp ApplicationsFeatures Package Dimensions High VEBO.unit:mm Wide ASO and highly resistant to breakdown.2003B[2SA1246/2SC3114]5.04.04.00.450.50.440.451 2 31 : Emitter2 : Collector( ) : 2SA1246 3 : Base1.3 1.3 SANYO : NPSpecificationsAbsolute Maxim
2sc3117.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3117 DESCRIPTION With TO-126 package Complement to type 2SA1249 High breakdown voltage Large current capacity APPLICATIONS Color TV sound output;converters; Inverters applications 160V/1.5A switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3
2sc3117.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3117 DESCRIPTION With TO-126 package Complement to type 2SA1249 High breakdown voltage Large current capacity APPLICATIONS Color TV sound output;converters; Inverters applications 160V/1.5A switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 m
2sc3110.pdf
INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC3110 DESCRIPTION Low Noise High Gain High Current-Gain Bandwidth Product APPLICATIONS Designed for use in RF wide band low noise amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 15 V VCEO Collector-Emitter Voltage 12 V VEBO Emit
Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP31C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
