2SC3121 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SC3121 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3121 TV Tuner, UHF Oscillator Applications (common base) Unit: mm TV Tuner, UHF Converter Applications (common base) High transition frequency: fT = 1500 MHz (typ.) Excellent linearity Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 30 VCollector-emi

SMD Type TransistorsNPN Transistors2SC3121SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=15V +0.10.95-0.1 0.1+0.05-0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC3121DESCRIPTIONHigh Gain Bandwidth Productf = 1500 MHz TYP.TExcellent LinearityMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSTV tuner, UHF oscillator applications.TV tuner, UHF converter applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

2SC3124 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3124 TV Tuner, VHF Oscillator Applications Unit: mm Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 30 VCollector-emitter voltage VCEO 15 VEmitter-base voltage VEBO 3 VCollector current IC 50 mABase current IB 25 mACollector power dissipation PC 150 mWJu

2SC3120 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3120 TV Tuner, UHF Mixer Applications Unit: mm VHF~UHF Band RF Amplifier Applications Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 30 VCollector-emitter voltage VCEO 15 VEmitter-base voltage VEBO 3 VCollector current IC 50 mABase current IB 25 mAColle

2SC3125 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3125 TV Final Picture IF Amplifier Applications Unit: mm Good linearity of fT Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 30 VCollector-emitter voltage VCEO 25 VEmitter-base voltage VEBO 4 VCollector current IC 50 mABase current IB 25 mACollector

2SC3123 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3123 TV VHF Mixer Applications Unit: mm High conversion gain: Gce = 23dB (typ.) Low reverse transfer capacitance: C = 0.4 pF (typ.) reMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 30 VCollector-emitter voltage VCEO 20 VEmitter-base voltage VEBO 3

2SC3122 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3122 TV VHF RF Amplifier Applications Unit: mm High gain: Gpe = 24dB (typ.) (f = 200 MHz) Low noise: NF = 2.0dB (typ.) (f = 200 MHz) Excellent forward AGC characteristics Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 30 VCollector-emitter volta

2SC3127, 2SC3128, 2SC3510Silicon NPN EpitaxialApplicationUHF/VHF wide band amplifierOutlineMPAK 2SC3127311. Emitter2. Base23. Collector2SC3127, 2SC3128, 2SC3510TO-92 (2) 2SC3128, 2SC35101. Base2. Emitter3. Collector321Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SC3127*1 2SC3128 2SC3510 UnitCollector to base voltage VCBO 20 20 20 VCollector t

SMD Type TransistorsNPN Transistors2SC3124SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=15V+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect

SMD Type TransistorsNPN Transistors2SC3120SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=15V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Colle

SMD Type TransistorsNPN Transistors2SC3125SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=25V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Colle

SMD Type TransistorsNPN Transistors2SC3123SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=20V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Colle

SMD Type TransistorsNPN Transistors2SC3122SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=20mA Collector Emitter Voltage VCEO=30V1 2+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect

SMD Type TransistorsNPN Transistors2SC3127SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=12V+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collecto

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC3124DESCRIPTIONHigh Gain Bandwidth Productf = 1100 MHz TYP.TMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for TV tuner ,VHF oscillator applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 30 VCBOV Collec

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC3125 DESCRIPTION Good Linearity of fTAPPLICATIONS Designed for TV Final Picture IF amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 4 V IC Collector Curre

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC3123DESCRIPTIONHigh Conversion GainG = 23dB TYP.ceLow Reverse Transfer CapacitanceC = 0.4pF TYP.reMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for TV VHF mixer applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collecto

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC3122 DESCRIPTION High Gain- : Gpe= 24dB TYP. @ f= 200MHz Low Noise- : NF= 2.0dB TYP. @ f= 200MHz APPLICATIONS Designed for TV VHF RF amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltag

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC3127 DESCRIPTION Low Noise and High Gain NF = 2.2 dB TYP. @VCE = 5 V, IC = 5 mA, f = 900 MHz PG = 10.5 dB TYP. @VCE = 5 V, IC = 20 mA, f = 900 MHz APPLICATIONS Designed for use in low-noise and small signal amplifiers from VHF ~ UHF band. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAME