2SC3150 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC3150
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 40 W
Tensión colector-base (Vcb): 900 V
Tensión colector-emisor (Vce): 800 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 15 MHz
Capacitancia de salida (Cc): 60 pF
Ganancia de corriente contínua (hFE): 10
Encapsulados: TO220
Búsqueda de reemplazo de 2SC3150
- Selecciónⓘ de transistores por parámetros
2SC3150 datasheet
..1. Size:102K sanyo
2sc3150.pdf 
Ordering number EN1069C NPN Triple Diffused Planar Silicon Transistor 2SC3150 800V/3A Switching Regulator Applications Features Package Dimensions High breakdown voltage (VCBO 900V). unit mm Fast switching speed. 2010C Wide ASO. [2SC3150] 1 Base JEDEC TO-220AB 2 Collector EIAJ SC-46 3 Emitter Specifications Absolute Maximum Ratings at Ta = 25 C Parame
..2. Size:216K inchange semiconductor
2sc3150.pdf
isc Silicon NPN Power Transistor 2SC3150 DESCRIPTION High Breakdown Voltage- V = 900V(Min) (BR)CBO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base
0.1. Size:346K lzg
2sc3150a.pdf
2SC3150A(3DD3150A) NPN /SILICON NPN TRANSISTOR Purpose Switching regulator applications. Features High V , high speed switching, wide ASO. CEO /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 1000 V CBO V 750 V
0.2. Size:174K cn sptech
2sc3150k 2sc3150l 2sc3150m.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC3150 DESCRIPTION High Breakdown Voltage- V = 900V(Min) (BR)CBO Fast Switching Speed Wide Area of Safe Operation APPLICATIONS Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 900 V CBO V Collector-Emitter Voltage 800 V
8.1. Size:97K sanyo
2sc3151.pdf
Ordering number EN1070C NPN Triple Diffused Planar Silicon Transistor 2SC3151 800V/1.5A Switching Regulator Applications Features Package Dimensions High breakdown voltage (VCBO 900V). unit mm Fast switching speed. 2022A Wide ASO. [2SC3151] 1 Base 2 Collector 3 Emitter SANYO TO-3PB Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Con
8.2. Size:102K sanyo
2sc3152.pdf
Ordering number EN1071D NPN Triple Diffused Planar Silicon Transistor 2SC3152 800V/3A Switching Regulator Applications Features Package Dimensions High breakdown voltage (VCBO 900V). unit mm Fast switching speed. 2022A Wide ASO. [2SC3152] 1 Base 2 Collector 3 Emitter SANYO TO-3PB Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Condi
8.4. Size:97K sanyo
2sc3153.pdf
Ordering number EN1072D NPN Triple Diffused Planar Silicon Transistor 2SC3153 800V/6A Switching Regulator Applications Features Package Dimensions High breakdown voltage (VCBO 900V). unit mm Fast switching speed. 2022A Wide ASO. [2SC3153] 1 Base 2 Collector 3 Emitter SANYO TO-3PB Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Condi
8.5. Size:221K jmnic
2sc3151.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3151 DESCRIPTION With TO-3PN package High breakdown voltage (VCBO 900V) Fast switching speed Wide ASO Safe Operating Area APPLICATIONS 800V/1.5A Switching Regulator Applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symb
8.6. Size:222K jmnic
2sc3152.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3152 DESCRIPTION With TO-3PN package High breakdown voltage (VCBO 900V) Fast switching speed Wide ASO Safe Operating Area APPLICATIONS 800V/3A Switching Regulator Applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol
8.7. Size:156K jmnic
2sc3157.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3157 DESCRIPTION With TO-220 package High switching speed Low collector saturation voltage Complement to type 2SA1261 APPLICATIONS For high voltage ,high speed and power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETE
8.8. Size:144K jmnic
2sc3158.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3158 DESCRIPTION With TO-220F package High voltage High switching speed APPLICATIONS For switching regulator applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO
8.9. Size:217K jmnic
2sc3153.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3153 DESCRIPTION With TO-3PN package High breakdown voltage (VCBO 900V) Fast switching speed Wide ASO Safe Operating Area APPLICATIONS 800V/6A switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol
8.10. Size:142K jmnic
2sc3159.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3159 DESCRIPTION With TO-220F package High voltage High switching speed APPLICATIONS For switching regulator applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO
8.11. Size:177K cn sptech
2sc3157m 2sc3157l 2sc3157k.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC3157 DESCRIPTION Low Collector Saturation Voltage- V = 0.6V(Max.)@I = 5A CE(sat) C Fast Switching Speed Complement to Type 2SA1261 APPLICATIONS Developed for high-voltage high-speed switching, and is ideal for use as a driver in devices such as switching reg- lators, DC/DC converters, and high frequency pow
8.12. Size:202K inchange semiconductor
2sc3151.pdf
isc Silicon NPN Power Transistor 2SC3151 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications. ABSOLUTE
8.13. Size:202K inchange semiconductor
2sc3152.pdf
isc Silicon NPN Power Transistor 2SC3152 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications. ABSOLUTE
8.14. Size:200K inchange semiconductor
2sc3157.pdf
isc Silicon NPN Power Transistor 2SC3157 DESCRIPTION Low Collector Saturation Voltage- V = 0.6V(Max.)@I = 5A CE(sat) C Fast Switching Speed Complement to Type 2SA1261 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Developed for high-voltage high-speed switching, and is ideal for use as a driver in devices such as switching
8.15. Size:199K inchange semiconductor
2sc3158.pdf
isc Silicon NPN Power Transistor 2SC3158 DESCRIPTION Low Collector Saturation Voltage- V = 1.0V(Max.)@I = 3A CE(sat) C Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator, DC-DC converter and high frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY
8.16. Size:190K inchange semiconductor
2sc3156.pdf
isc Silicon NPN Power Transistor 2SC3156 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME
8.17. Size:202K inchange semiconductor
2sc3153.pdf
isc Silicon NPN Power Transistor 2SC3153 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications. ABSOLUTE
8.18. Size:195K inchange semiconductor
2sc3159.pdf
isc Silicon NPN Power Transistor 2SC3159 DESCRIPTION Low Collector Saturation Voltage- V = 1.0V(Max.)@I = 6A CE(sat) C Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator, DC-DC converter and high frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY
Otros transistores... 2SC3146
, 2SC3147
, 2SC3148
, 2SC3149
, 2SC3149K
, 2SC3149L
, 2SC3149M
, 2SC315
, BD333
, 2SC3150K
, 2SC3150L
, 2SC3150M
, 2SC3151
, 2SC3151K
, 2SC3151L
, 2SC3151M
, 2SC3152
.
History: BC860A
| 2SD1127K
| BC486L
| BC860AW
