2SC3153
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC3153
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 100
W
Tensión colector-base (Vcb): 900
V
Tensión colector-emisor (Vce): 800
V
Tensión emisor-base (Veb): 7
V
Corriente del colector DC máxima (Ic): 6
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 15
MHz
Capacitancia de salida (Cc): 60
pF
Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta:
TO218
Búsqueda de reemplazo de transistor bipolar 2SC3153
2SC3153
Datasheet (PDF)
..1. Size:97K sanyo
2sc3153.pdf
Ordering number:EN1072DNPN Triple Diffused Planar Silicon Transistor2SC3153800V/6A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO 900V).unit:mm Fast switching speed.2022A Wide ASO.[2SC3153]1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Condi
..2. Size:217K jmnic
2sc3153.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3153 DESCRIPTION With TO-3PN package High breakdown voltage (VCBO900V) Fast switching speed Wide ASOSafe Operating Area APPLICATIONS 800V/6A switching regulator applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol
..3. Size:202K inchange semiconductor
2sc3153.pdf
isc Silicon NPN Power Transistor 2SC3153DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applicationsHigh speed DC-DC converter applications.ABSOLUTE
8.1. Size:102K sanyo
2sc3150.pdf
Ordering number:EN1069CNPN Triple Diffused Planar Silicon Transistor2SC3150800V/3A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO 900V).unit:mm Fast switching speed.2010C Wide ASO.[2SC3150]1 : BaseJEDEC : TO-220AB2 : CollectorEIAJ : SC-463 : EmitterSpecificationsAbsolute Maximum Ratings at Ta = 25CParame
8.2. Size:97K sanyo
2sc3151.pdf
Ordering number:EN1070CNPN Triple Diffused Planar Silicon Transistor2SC3151800V/1.5A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO 900V).unit:mm Fast switching speed.2022A Wide ASO.[2SC3151]1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Con
8.3. Size:102K sanyo
2sc3152.pdf
Ordering number:EN1071DNPN Triple Diffused Planar Silicon Transistor2SC3152800V/3A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO 900V).unit:mm Fast switching speed.2022A Wide ASO.[2SC3152]1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Condi
8.5. Size:221K jmnic
2sc3151.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3151 DESCRIPTION With TO-3PN package High breakdown voltage (VCBO900V) Fast switching speed Wide ASOSafe Operating Area APPLICATIONS 800V/1.5A Switching Regulator Applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symb
8.6. Size:222K jmnic
2sc3152.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3152 DESCRIPTION With TO-3PN package High breakdown voltage (VCBO900V) Fast switching speed Wide ASOSafe Operating Area APPLICATIONS 800V/3A Switching Regulator Applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol
8.7. Size:156K jmnic
2sc3157.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3157 DESCRIPTION With TO-220 package High switching speed Low collector saturation voltage Complement to type 2SA1261 APPLICATIONS For high voltage ,high speed and power switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETE
8.8. Size:144K jmnic
2sc3158.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3158 DESCRIPTION With TO-220F package High voltage High switching speed APPLICATIONS For switching regulator applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO
8.9. Size:142K jmnic
2sc3159.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3159 DESCRIPTION With TO-220F package High voltage High switching speed APPLICATIONS For switching regulator applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO
8.10. Size:346K lzg
2sc3150a.pdf
2SC3150A(3DD3150A) NPN /SILICON NPN TRANSISTOR : Purpose: Switching regulator applications. : Features: High V , high speed switching, wide ASO. CEO/Absolute maximum ratings(Ta=25) Symbol Rating Unit V 1000 V CBO V 750 V
8.11. Size:174K cn sptech
2sc3150k 2sc3150l 2sc3150m.pdf
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC3150DESCRIPTIONHigh Breakdown Voltage-: V = 900V(Min)(BR)CBOFast Switching SpeedWide Area of Safe OperationAPPLICATIONSDesigned for switching regulator ApplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 900 VCBOV Collector-Emitter Voltage 800 V
8.12. Size:177K cn sptech
2sc3157m 2sc3157l 2sc3157k.pdf
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC3157DESCRIPTIONLow Collector Saturation Voltage-: V = 0.6V(Max.)@I = 5ACE(sat) CFast Switching SpeedComplement to Type 2SA1261APPLICATIONSDeveloped for high-voltage high-speed switching, and isideal for use as a driver in devices such as switching reg-lators, DC/DC converters, and high frequency pow
8.13. Size:216K inchange semiconductor
2sc3150.pdf
isc Silicon NPN Power Transistor 2SC3150DESCRIPTIONHigh Breakdown Voltage-: V = 900V(Min)(BR)CBOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator ApplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base
8.14. Size:202K inchange semiconductor
2sc3151.pdf
isc Silicon NPN Power Transistor 2SC3151DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applicationsHigh speed DC-DC converter applications.ABSOLUTE
8.15. Size:202K inchange semiconductor
2sc3152.pdf
isc Silicon NPN Power Transistor 2SC3152DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applicationsHigh speed DC-DC converter applications.ABSOLUTE
8.16. Size:200K inchange semiconductor
2sc3157.pdf
isc Silicon NPN Power Transistor 2SC3157DESCRIPTIONLow Collector Saturation Voltage-: V = 0.6V(Max.)@I = 5ACE(sat) CFast Switching SpeedComplement to Type 2SA1261Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDeveloped for high-voltage high-speed switching, and isideal for use as a driver in devices such as switching
8.17. Size:199K inchange semiconductor
2sc3158.pdf
isc Silicon NPN Power Transistor 2SC3158DESCRIPTIONLow Collector Saturation Voltage-: V = 1.0V(Max.)@I = 3ACE(sat) CFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator, DC-DC converter and highfrequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY
8.18. Size:190K inchange semiconductor
2sc3156.pdf
isc Silicon NPN Power Transistor 2SC3156DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME
8.19. Size:195K inchange semiconductor
2sc3159.pdf
isc Silicon NPN Power Transistor 2SC3159DESCRIPTIONLow Collector Saturation Voltage-: V = 1.0V(Max.)@I = 6ACE(sat) CFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator, DC-DC converter and highfrequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.