2SC3162
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC3162
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 40
W
Tensión colector-base (Vcb): 500
V
Tensión colector-emisor (Vce): 400
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 3
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 15
Paquete / Cubierta:
TO220
2SC3162
Datasheet (PDF)
8.2. Size:145K jmnic
2sc3163.pdf 
JMnic Product Specification Silicon NPN Power Transistors 2SC3163 DESCRIPTION With TO-220C package High breakdown voltage High speed switching PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter 500 V VCEO Collector-e
8.3. Size:151K jmnic
2sc3164.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3164 DESCRIPTION With TO-247 package Switching power transistor High breakdown voltage PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol 3 EmitterAbsolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collect
8.4. Size:151K jmnic
2sc3169.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3169 DESCRIPTION With TO-220Fa package Low collector saturation voltage High breakdown voltge APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage
8.7. Size:180K inchange semiconductor
2sc3168.pdf
isc Product Specificationisc Silicon NPN Power Transistor 2SC3168DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation VoltageMinimum Lot-to-Lot variations for robust devicePerformance and reliable operation.APPLICATIONSSwitching regulatorMotor controlsDeflections circuitsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV C
8.8. Size:196K inchange semiconductor
2sc3163.pdf
isc Silicon NPN Power Transistor 2SC3163DESCRIPTIONLow Collector Saturation Voltage-: V = 1.0V(Max.)@I = 3ACE(sat) CFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator, DC-DC converter and highfrequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY
8.9. Size:122K inchange semiconductor
2sc3164.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3164 DESCRIPTION With TO-247 package Switching power transistor High breakdown voltage PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol 3 EmitterAbsolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE U
8.10. Size:197K inchange semiconductor
2sc3169.pdf
isc Silicon NPN Power Transistor 2SC3169DESCRIPTION Collector-Emiiter Sustaining Voltage-: V = 400V(Min.)CEO(SUS)Low Collector Saturation Voltage: V = 1.0V(Max.)@ I = 1ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATI
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
