2SC3182N Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC3182N
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 100 W
Tensión colector-base (Vcb): 140 V
Tensión colector-emisor (Vce): 140 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 10 A
Temperatura operativa máxima (Tj): 125 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 30 MHz
Capacitancia de salida (Cc): 220 pF
Ganancia de corriente contínua (hFE): 55
Encapsulados: TO247
Búsqueda de reemplazo de 2SC3182N
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2SC3182N datasheet
..1. Size:198K jmnic
2sc3182n.pdf 
JMnic Product Specification Silicon NPN Power Transistors 2SC3182N DESCRIPTION With TO-3P(I) package Complement to type 2SA1265N APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol
..2. Size:163K inchange semiconductor
2sc3182n.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3182N DESCRIPTION With TO-3P(I) package Complement to type 2SA1265N APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P
7.1. Size:91K toshiba
2sc3182.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
7.2. Size:203K inchange semiconductor
2sc3182.pdf
isc Silicon NPN Power Transistor 2SC3182 DESCRIPTION Low Collector Saturation Voltage- V = 2.0V(Max.) @I = 7A CE(sat) C Good Linearity of h FE Complement to Type 2SA1265 Minimum Lot-to-Lot variations for robust device performance and reliable operation] APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage app
8.1. Size:90K toshiba
2sc3180.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
8.2. Size:90K toshiba
2sc3181.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
8.3. Size:98K sanyo
2sc3184.pdf
Ordering number EN1252C NPN Triple Diffused Planar Silicon Transistor 2SC3184 800V/0.5A Switching Regulator Applications Features Package Dimensions High breakdown voltage (VCBO 900V). unit mm Fast switching speed. 2010C Wide ASO. [2SC3184] 1 Base JEDEC TO-220AB 2 Collector EIAJ SC-46 3 Emitter Specifications Absolute Maximum Ratings at Ta = 25 C Para
8.4. Size:105K sanyo
2sc3183.pdf
Ordering number EN1251A NPN Triple Diffused Planar Silicon Transistor 2SC3183 800V/0.2A Switching Regulator Applications Features Package Dimensions High breakdown voltage (VCBO 900V). unit mm Fast switching speed. 2010C Wide ASO. [2SC3183] 1 Base JEDEC TO-220AB 2 Collector EIAJ SC-46 3 Emitter Specifications Absolute Maximum Ratings at Ta = 25 C Para
8.6. Size:40K panasonic
2sc3187 e.pdf
Transistor 2SC3187 Silicon NPN triple diffusion planer type For small TV video output Unit mm 5.0 0.2 4.0 0.2 Features High collector to emitter voltage VCEO. Small collector output capacitance Cob. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 300 V 1.27 1.27 Collector to emitter voltage VC
8.7. Size:36K panasonic
2sc3187.pdf
Transistor 2SC3187 Silicon NPN triple diffusion planer type For small TV video output Unit mm 5.0 0.2 4.0 0.2 Features High collector to emitter voltage VCEO. Small collector output capacitance Cob. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 300 V 1.27 1.27 Collector to emitter voltage VC
8.8. Size:195K jmnic
2sc3180n.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3180N DESCRIPTION With TO-3P(I) package Complement to type 2SA1263N APPLICATIONS Power amplifier applications Recommend for 40W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol
8.9. Size:195K jmnic
2sc3181n.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3181N DESCRIPTION With TO-3P(I) package Complement to type 2SA1264N APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol
8.10. Size:178K cn sptech
2sc3181r 2sc3181o.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC3181 DESCRIPTION Low Collector Saturation Voltage- V = 2.0V(Max.) @I = 6A CE(sat) C Good Linearity of h FE Complement to Type 2SA1264 APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO
8.11. Size:198K inchange semiconductor
2sc3184.pdf
isc Silicon NPN Power Transistor 2SC3184 DESCRIPTION High breakdown voltage - VCBO 900V Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Switching Regulator applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 900 V CBO
8.12. Size:203K inchange semiconductor
2sc3180.pdf
isc Silicon NPN Power Transistor 2SC3180 DESCRIPTION Low Collector Saturation Voltage- V = 2.0V(Max.) @I = 5A CE(sat) C Good Linearity of h FE Complement to Type 2SA1263 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 40W high fidelity audio frequency amplifier output stage appl
8.13. Size:221K inchange semiconductor
2sc3180n.pdf
isc Silicon NPN Power Transistor 2SC3180N DESCRIPTION Low Collector Saturation Voltage- V = 2.0V(Max.) @I = 5A CE(sat) C Good Linearity of h FE Complement to Type 2SA1263N Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 40W high fidelity audio frequency amplifier output stage ap
8.14. Size:203K inchange semiconductor
2sc3181.pdf
isc Silicon NPN Power Transistor 2SC3181 DESCRIPTION Low Collector Saturation Voltage- V = 2.0V(Max.) @I = 6A CE(sat) C Good Linearity of h FE Complement to Type 2SA1264 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage appl
8.15. Size:161K inchange semiconductor
2sc3181n.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3181N DESCRIPTION With TO-3P(I) package Complement to type 2SA1264N APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P
Otros transistores... 2SC3180
, 2SC3180O
, 2SC3180R
, 2SC3181
, 2SC3181N
, 2SC3181NO
, 2SC3181NR
, 2SC3182
, SS8050
, 2SC3182NO
, 2SC3182NR
, 2SC3183
, 2SC3183K
, 2SC3183L
, 2SC3183M
, 2SC3184
, 2SC3184K
.
