2SC3183 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SC3183
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 25 W
   Tensión colector-base (Vcb): 900 V
   Tensión colector-emisor (Vce): 800 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 0.2 A
   Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 15 MHz
   Capacitancia de salida (Cc): 10 pF
   Ganancia de corriente contínua (hfe): 10
   Paquete / Cubierta: TO220

Búsqueda de reemplazo de 2SC3183

- Selección ⓘ de transistores por parámetros

2SC3183 Datasheet (PDF)

..1. Size:105K sanyo
2sc3183.pdf pdf_icon

Ordering number:EN1251ANPN Triple Diffused Planar Silicon Transistor2SC3183800V/0.2A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO 900V).unit:mm Fast switching speed.2010C Wide ASO.[2SC3183]1 : BaseJEDEC : TO-220AB2 : CollectorEIAJ : SC-463 : EmitterSpecificationsAbsolute Maximum Ratings at Ta = 25CPara

8.1. Size:90K toshiba
2sc3180.pdf pdf_icon

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

8.2. Size:90K toshiba
2sc3181.pdf pdf_icon

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

8.3. Size:91K toshiba
2sc3182.pdf pdf_icon

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

8.4. Size:98K sanyo
2sc3184.pdf pdf_icon

Ordering number:EN1252CNPN Triple Diffused Planar Silicon Transistor2SC3184800V/0.5A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO 900V).unit:mm Fast switching speed.2010C Wide ASO.[2SC3184]1 : BaseJEDEC : TO-220AB2 : CollectorEIAJ : SC-463 : EmitterSpecificationsAbsolute Maximum Ratings at Ta = 25CPara

8.5. Size:661K sanyo
2sc3189.pdf pdf_icon

8.6. Size:40K panasonic
2sc3187 e.pdf pdf_icon

Transistor2SC3187Silicon NPN triple diffusion planer typeFor small TV video outputUnit: mm5.0 0.2 4.0 0.2FeaturesHigh collector to emitter voltage VCEO.Small collector output capacitance Cob.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.20.45 0.1 0.45 0.1Collector to base voltage VCBO 300 V1.27 1.27Collector to emitter voltage VC

8.7. Size:36K panasonic
2sc3187.pdf pdf_icon

8.8. Size:195K jmnic
2sc3180n.pdf pdf_icon

JMnic Product Specification Silicon NPN Power Transistors 2SC3180N DESCRIPTION With TO-3P(I) package Complement to type 2SA1263N APPLICATIONS Power amplifier applications Recommend for 40W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol

8.9. Size:198K jmnic
2sc3182n.pdf pdf_icon

JMnic Product Specification Silicon NPN Power Transistors 2SC3182N DESCRIPTION With TO-3P(I) package Complement to type 2SA1265N APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol

8.10. Size:195K jmnic
2sc3181n.pdf pdf_icon

JMnic Product Specification Silicon NPN Power Transistors 2SC3181N DESCRIPTION With TO-3P(I) package Complement to type 2SA1264N APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol

8.11. Size:178K cn sptech
2sc3181r 2sc3181o.pdf pdf_icon

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC3181DESCRIPTIONLow Collector Saturation Voltage-: V = 2.0V(Max.) @I = 6ACE(sat) CGood Linearity of hFEComplement to Type 2SA1264APPLICATIONSPower amplifier applicationsRecommend for 55W high fidelity audio frequencyamplifier output stage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

8.12. Size:198K inchange semiconductor
2sc3184.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC3184DESCRIPTIONHigh breakdown voltage -: VCBO900VGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsSwitching Regulator applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 900 VCBO

8.13. Size:203K inchange semiconductor
2sc3180.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC3180DESCRIPTIONLow Collector Saturation Voltage-: V = 2.0V(Max.) @I = 5ACE(sat) CGood Linearity of hFEComplement to Type 2SA1263Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 40W high fidelity audio frequencyamplifier output stage appl

8.14. Size:221K inchange semiconductor
2sc3180n.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC3180NDESCRIPTIONLow Collector Saturation Voltage-: V = 2.0V(Max.) @I = 5ACE(sat) CGood Linearity of hFEComplement to Type 2SA1263NMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 40W high fidelity audio frequencyamplifier output stage ap

8.15. Size:203K inchange semiconductor
2sc3181.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC3181DESCRIPTIONLow Collector Saturation Voltage-: V = 2.0V(Max.) @I = 6ACE(sat) CGood Linearity of hFEComplement to Type 2SA1264Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 55W high fidelity audio frequencyamplifier output stage appl

8.16. Size:163K inchange semiconductor
2sc3182n.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3182N DESCRIPTION With TO-3P(I) package Complement to type 2SA1265N APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P

8.17. Size:161K inchange semiconductor
2sc3181n.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3181N DESCRIPTION With TO-3P(I) package Complement to type 2SA1264N APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P

8.18. Size:203K inchange semiconductor
2sc3182.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC3182DESCRIPTIONLow Collector Saturation Voltage-: V = 2.0V(Max.) @I = 7ACE(sat) CGood Linearity of hFEComplement to Type 2SA1265Minimum Lot-to-Lot variations for robust deviceperformance and reliable operation]APPLICATIONSPower amplifier applicationsRecommend for 70W high fidelity audio frequencyamplifier output stage app

Otros transistores... 2SC3181 , 2SC3181N , 2SC3181NO , 2SC3181NR , 2SC3182 , 2SC3182N , 2SC3182NO , 2SC3182NR , TIP127 , 2SC3183K , 2SC3183L , 2SC3183M , 2SC3184 , 2SC3184K , 2SC3184L , 2SC3184M , 2SC3185 .