2SC3216 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC3216
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 200 W
Tensión colector-base (Vcb): 1200 V
Tensión colector-emisor (Vce): 800 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 20 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 90
Empaquetado / Estuche: TO3
Búsqueda de reemplazo de transistor bipolar 2SC3216
2SC3216 Datasheet (PDF)
4.1. 2sc3218-m.pdf 
Size:121K _nec
4.2. 2sc3212.pdf Size:81K _panasonic
4.3. 2sc3210.pdf Size:75K _no
4.4. 2sc3212.pdf Size:156K _jmnic
JMnic Product Specification Silicon NPN Power Transistors 2SC3212 2SC3212A DESCRIPTION · ·With TO-3PFa package ·Low collector saturation voltage ·High VCBO ·High speed switching APPLICATIONS ·For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2SC3212
4.5. 2sc3210.pdf Size:152K _jmnic
JMnic Product Specification Silicon NPN Power Transistors 2SC3210 DESCRIPTION · ·With TO-3PFa package ·Low collector saturation voltage ·High breakdown voltage APPLICATIONS ·For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage
4.6. 2sc3214.pdf Size:147K _jmnic
JMnic Product Specification Silicon NPN Power Transistors 2SC3214 DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·For switching regulator and DC/DC converter applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VA
4.7. 2sc3212.pdf Size:197K _inchange_semiconductor
isc Silicon NPN Power Transistor 2SC3212 DESCRIPTION · ·Collector-Emiiter Sustaining Voltage- : V = 500V(Min.) CEO(SUS) ·Low Collector Saturation Voltage : V = 1.0V(Max.)@ I = 5A CE(sat) C ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching applications. ABSOLUTE MAXIMUM RATI
4.8. 2sc3210.pdf Size:197K _inchange_semiconductor
isc Silicon NPN Power Transistor 2SC3210 DESCRIPTION · ·Collector-Emiiter Sustaining Voltage- : V = 400V(Min.) CEO(SUS) ·Low Collector Saturation Voltage : V = 1.0V(Max.)@ I = 5A CE(sat) C ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching applications. ABSOLUTE MAXIMUM RATI
4.9. 2sc3212 2sc3212a.pdf Size:124K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3212 2SC3212A DESCRIPTION · ·With TO-3PFa package ·Low collector saturation voltage ·High VCBO ·High speed switching APPLICATIONS ·For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VA
4.10. 2sc3211a.pdf Size:82K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3211A DESCRIPTION ·With TO-3PFa package ·High VCBO ·Low collector saturation voltage APPLICATIONS ·For high speed switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector 3 Emitter ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector
4.11. 2sc3211.pdf Size:197K _inchange_semiconductor
isc Silicon NPN Power Transistor 2SC3211 DESCRIPTION · ·Collector-Emiiter Sustaining Voltage- : V = 500V(Min.) CEO(SUS) ·Low Collector Saturation Voltage : V = 1.0V(Max.)@ I = 3A CE(sat) C ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching applications. ABSOLUTE MAXIMUM RATI
4.12. 2sc3214.pdf Size:188K _inchange_semiconductor
isc Silicon NPN Power Transistor 2SC3214 DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : V = 800V (Min) CEO(SUS) ·High Switching Speed ·Large safe operating area ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulators,Motor controls,Ultrasonic Oscillators. ABSOLUTE MAXIMUM RATINGS(T =25℃) a
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
