2SC3216 Todos los transistores

 

2SC3216 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC3216

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 200 W

Tensión colector-base (Vcb): 1200 V

Tensión colector-emisor (Vce): 800 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 20 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 90

Empaquetado / Estuche: TO3

Búsqueda de reemplazo de transistor bipolar 2SC3216

 

2SC3216 Datasheet (PDF)

4.1. 2sc3218-m.pdf Size:121K _nec

2SC3216
2SC3216



4.2. 2sc3212.pdf Size:81K _panasonic

2SC3216



 4.3. 2sc3210.pdf Size:75K _no

2SC3216



4.4. 2sc3212.pdf Size:156K _jmnic

2SC3216
2SC3216

JMnic Product Specification Silicon NPN Power Transistors 2SC3212 2SC3212A DESCRIPTION · ·With TO-3PFa package ·Low collector saturation voltage ·High VCBO ·High speed switching APPLICATIONS ·For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2SC3212

 4.5. 2sc3210.pdf Size:152K _jmnic

2SC3216
2SC3216

JMnic Product Specification Silicon NPN Power Transistors 2SC3210 DESCRIPTION · ·With TO-3PFa package ·Low collector saturation voltage ·High breakdown voltage APPLICATIONS ·For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage

4.6. 2sc3214.pdf Size:147K _jmnic

2SC3216
2SC3216

JMnic Product Specification Silicon NPN Power Transistors 2SC3214 DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·For switching regulator and DC/DC converter applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VA

4.7. 2sc3212.pdf Size:197K _inchange_semiconductor

2SC3216
2SC3216

isc Silicon NPN Power Transistor 2SC3212 DESCRIPTION · ·Collector-Emiiter Sustaining Voltage- : V = 500V(Min.) CEO(SUS) ·Low Collector Saturation Voltage : V = 1.0V(Max.)@ I = 5A CE(sat) C ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching applications. ABSOLUTE MAXIMUM RATI

4.8. 2sc3210.pdf Size:197K _inchange_semiconductor

2SC3216
2SC3216

isc Silicon NPN Power Transistor 2SC3210 DESCRIPTION · ·Collector-Emiiter Sustaining Voltage- : V = 400V(Min.) CEO(SUS) ·Low Collector Saturation Voltage : V = 1.0V(Max.)@ I = 5A CE(sat) C ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching applications. ABSOLUTE MAXIMUM RATI

4.9. 2sc3212 2sc3212a.pdf Size:124K _inchange_semiconductor

2SC3216
2SC3216

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3212 2SC3212A DESCRIPTION · ·With TO-3PFa package ·Low collector saturation voltage ·High VCBO ·High speed switching APPLICATIONS ·For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VA

4.10. 2sc3211a.pdf Size:82K _inchange_semiconductor

2SC3216
2SC3216

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3211A DESCRIPTION ·With TO-3PFa package ·High VCBO ·Low collector saturation voltage APPLICATIONS ·For high speed switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector 3 Emitter ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector

4.11. 2sc3211.pdf Size:197K _inchange_semiconductor

2SC3216
2SC3216

isc Silicon NPN Power Transistor 2SC3211 DESCRIPTION · ·Collector-Emiiter Sustaining Voltage- : V = 500V(Min.) CEO(SUS) ·Low Collector Saturation Voltage : V = 1.0V(Max.)@ I = 3A CE(sat) C ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching applications. ABSOLUTE MAXIMUM RATI

4.12. 2sc3214.pdf Size:188K _inchange_semiconductor

2SC3216
2SC3216

isc Silicon NPN Power Transistor 2SC3214 DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : V = 800V (Min) CEO(SUS) ·High Switching Speed ·Large safe operating area ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulators,Motor controls,Ultrasonic Oscillators. ABSOLUTE MAXIMUM RATINGS(T =25℃) a

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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